IP Library › Granted Patent US 12,356,866
Granted Patent B2
US 12,356,866 · App. 17/472,056 · Granted Jul 8, 2025

Magnetic memory device

Inventors: Tadaaki Oikawa (Seoul, KR); Youngmin Eeh (Seongnam-si, KR); Eiji Kitagawa (Seoul, KR); Kazuya Sawada (Seoul, KR); Taiga Isoda (Seoul, KR); Ku Youl Jung (Icheon-si, KR); Jin Won Jung (Icheon-si, KR)
Assignees: Kioxia Corporation; SK hynix Inc.
H10N50/80H10B61/20H10N50/85
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Quick Facts
Patent No.
US 12,356,866
App. No.
17/472,056
Granted
Jul 8, 2025
Kind
B2
Abstract

According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, a non-magnetic layer provided between the first magnetic layer and the second magnetic layer, and an oxide layer provided adjacent to the first magnetic layer, the first magnetic layer being provided between the non-magnetic layer and the oxide layer, and the oxide layer containing a rare earth element, boron (B), and oxygen (O).

Claims (28)

1. A magnetic memory device comprising a stacked structure comprising:

a first magnetic layer having a variable magnetization direction;

a second magnetic layer having a fixed magnetization direction;

a non-magnetic layer provided between the first magnetic layer and the second magnetic layer; and

an oxide layer provided adjacent to the first magnetic layer,

the first magnetic layer being provided between the non-magnetic layer and the oxide layer, and

the oxide layer containing a rare earth element, boron (B), and oxygen (O),

wherein the rare earth element is gadolinium (Gd) or yttrium (Y), and

wherein a ratio of (i) a concentration of boron (B) contained in the oxide layer to (ii) a sum of a concentration of the gadolinium (Gd) or yttrium (Y) and the concentration of boron (B) contained in the oxide layer is 20% or higher.

2. The device of claim 1 , wherein

the first magnetic layer contains iron (Fe), cobalt (Co) and boron (B).

3. The device of claim 1 , wherein

the first magnetic layer and the second magnetic layer have perpendicular magnetization.

4. The device of claim 1 , wherein

the stacked structure further comprises a third magnetic layer canceling a magnetic field applied from the second magnetic layer to the first magnetic layer.

5. The device of claim 4 , wherein

the second magnetic layer and the third magnetic layer are antiferromagnetically coupled.

6. The device of claim 1 , wherein

the first magnetic layer is located on an upper layer side of the second magnetic layer.

7. The device of claim 1 , wherein

the first magnetic layer is located on a lower layer side of the second magnetic layer.

8. The device of claim 1 , wherein

the non-magnetic layer contains magnesium (Mg) and oxygen (O).

9. The device of claim 1 , wherein

the oxide layer is in contact with the first magnetic layer.

10. The device of claim 1 , wherein

the stacked structure is included in a magnetoresistance effect element.

11. The device of claim 10 , further comprising a switching element connected in series to the magnetoresistance effect element.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2022
From: OIKAWA, TADAAKI; EEH, YOUNGMIN; KITAGAWA, EIJI; SAWADA, KAZUYA; ISODA, TAIGA; JUNG, KU YOUL; JUNG, JIN WON
To: KIOXIA CORPORATION; SK HYNIX INC.
Reel/Frame 058735/0901 →
Priority Claims (1)
JP 2021-043842 · Mar 17, 2021 · national
Continuity (1)
Related Publication 20220302372A1 · Sep 22, 2022
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