Magnetic memory device
According to one embodiment, a magnetic memory device includes a lower region, and a stacked structure provided on the lower region, wherein the stacked structure includes a conductive oxide layer containing boron (B), a first magnetic layer provided between the lower region and the conductive oxide layer, having a variable magnetization direction, and containing iron (Fe) and boron (B), a second magnetic layer provided between the lower region and the first magnetic layer, having a fixed magnetization direction, and containing iron (Fe) and boron (B), and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.
1. A magnetic memory device comprising:
a lower region; and
a stacked structure provided on the lower region, wherein
the stacked structure includes:
a conductive oxide layer containing boron (B);
a first magnetic layer provided between the lower region and the conductive oxide layer, having a variable magnetization direction, and containing iron (Fe) and boron (B);
a second magnetic layer provided between the lower region and the first magnetic layer, having a fixed magnetization direction, and containing iron (Fe) and boron (B); and
a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer,
wherein the conductive oxide layer contains at least one element selected from transition metal elements and rare earth metal elements, and
wherein the conductive oxide layer is doped with a predetermined metal element selected from niobium (Nb), tantalum (Ta), tungsten (W), lithium (Li) and indium (In).
2. The device of claim 1 , wherein the stacked structure further includes a third magnetic layer provided between the lower region and the second magnetic layer, having a fixed magnetization direction parallel to the magnetization direction of the second magnetic layer, and containing cobalt (Co) and at least one element selected from platinum (Pt), nickel (Ni) and palladium (Pd).
3. The device of claim 2 , wherein the stacked structure further includes a fourth magnetic layer provided between the lower region and the third magnetic layer, having a fixed magnetization direction antiparallel to the magnetization direction of the second magnetic layer, and containing cobalt (Co) and at least one element selected from platinum (Pt), nickel (Ni) and palladium (Pd).
4. The device of claim 1 , wherein:
the stacked structure further includes a conductive contact layer containing at least one element selected from ruthenium (Ru) and iridium (Ir), and
the conductive oxide layer is provided between the first magnetic layer and the conductive contact layer.
5. The device of claim 1 , wherein the nonmagnetic layer contains magnesium (Mg) and oxygen (O).
6. A magnetic memory device comprising:
a lower region; and
a stacked structure provided on the lower region, wherein
the stacked structure includes:
a conductive oxide layer containing boron (B);
a first magnetic layer provided between the lower region and the conductive oxide layer, having a variable magnetization direction, and containing iron (Fe) and boron (B);
a second magnetic layer provided between the conductive oxide layer and the first magnetic layer, having a fixed magnetization direction, and containing iron (Fe) and boron (B); and
a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer,
wherein the conductive oxide layer contains at least one element selected from transition metal elements and rare earth metal elements, and
wherein the conductive oxide layer is doped with a predetermined metal element selected from niobium (Nb), tantalum (Ta), tungsten (W), lithium (Li) and indium (In).
7. The device of claim 6 , wherein:
the stacked structure further includes a third magnetic layer having a fixed magnetization direction parallel to the magnetization direction of the second magnetic layer, and containing cobalt (Co) and at least one element selected from platinum (Pt), nickel (Ni) and palladium (Pd), and
the conductive oxide layer is provided between the second magnetic layer and the third magnetic layer.
8. The device of claim 7 , wherein:
the stacked structure further includes a second conductive oxide layer, and
the third magnetic layer is provided between the conductive oxide layer and the second conductive oxide layer.
9. The device of claim 7 , wherein:
the stacked structure further includes a fourth magnetic layer having a fixed magnetization direction antiparallel to the magnetization direction of the second magnetic layer, and containing cobalt (Co) and at least one element selected from platinum (Pt), nickel (Ni) and palladium (Pd), and
the third magnetic layer is provided between the conductive oxide layer and the fourth magnetic layer.
10. The device of claim 9 , wherein:
the stacked structure further includes a second conductive oxide layer, and
the fourth magnetic layer is provided between the third magnetic layer and the second conductive oxide layer.
11. The device of claim 7 , wherein the stacked structure further includes a fourth magnetic layer provided between the lower region and the first magnetic layer, having a fixed magnetization direction antiparallel to the magnetization direction of the second magnetic layer, and containing cobalt (Co) and at least one element selected from platinum (Pt), nickel (Ni) and palladium (Pd).
12. The device of claim 6 , wherein the nonmagnetic layer contains magnesium (Mg) and oxygen (O).