Magnetoresistive memory device

1. A magnetoresistive memory device comprising:

a first magnetic layer having a variable magnetization direction;

a second magnetic layer, a magnetization direction of the second magnetic layer being invariable;

a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer; and

a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer, wherein

the first magnetic layer having a stacked layer structure in which an amorphous magnetic material layer is sandwiched between crystalline magnetic material layers,

the magnetoresistive memory device further comprising

nonmagnetic material layers provided between one of the crystalline magnetic material layers and the amorphous magnetic material layer, and between the other crystalline magnetic layer and the amorphous magnetic material layer, respectively.

2. The device of claim 1 , wherein a first electrode is provided on a semiconductor substrate, and the first magnetic layer is disposed closer to the first electrode than the second magnetic layer.

3. The device of claim 1 , wherein:

the first magnetic layer is a reference layer having magnetic anisotropy perpendicular to a film surface;

the second magnetic layer is a storage layer having magnetic anisotropy perpendicular to a film surface; and

the first nonmagnetic layer is a tunnel barrier layer through which a tunneling current flows.

4. The device of claim 1 , wherein the second nonmagnetic layer comprises MgO.

5. The device of claim 1 , wherein the first and the second nonmagnetic layers are different materials.

6. The device of claim 1 , wherein the second magnetic layer includes Fe or Co.

7. The device of claim 1 , wherein the second nonmagnetic layer is an oxide.