IP Library › Granted Patent US 12,284,811
Granted Patent B2
US 12,284,811 · App. 17/472,472 · Granted Apr 22, 2025

Magnetic memory device

Inventors: Tadaaki Oikawa (Seoul, KR); Youngmin Eeh (Seongnam-si, KR); Eiji Kitagawa (Seoul, KR); Taiga Isoda (Seoul, KR); Ku Youl Jung (Icheon-si, KR); Jin Won Jung (Icheon-si, KR)
Assignees: Kioxia Corporation; SK HYNIX INC.
H10B61/00H10N50/10H10N50/80H10N50/85
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Quick Facts
Patent No.
US 12,284,811
App. No.
17/472,472
Granted
Apr 22, 2025
Kind
B2
Abstract

According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a fixed magnetization direction, a second magnetic layer having a variable magnetization direction, a non-magnetic layer provided between the first magnetic layer and the second magnetic layer, a molybdenum (Mo) layer provided on an opposite side of the non-magnetic layer with respect to the second magnetic layer, and an oxide layer provided between the second magnetic layer and the molybdenum (Mo) layer and containing a predetermined element selected from a rare earth element, silicon (Si) and aluminum (Al).

Claims (15)

1. A magnetic memory device comprising a stacked structure comprising:

a first magnetic layer having a fixed magnetization direction;

a second magnetic layer having a variable magnetization direction;

a non-magnetic layer provided between the first magnetic layer and the second magnetic layer;

a molybdenum (Mo) layer provided on an opposite side of the non-magnetic layer with respect to the second magnetic layer;

an oxide layer provided between the second magnetic layer and the molybdenum (Mo) layer;

a ruthenium (Ru) layer provided on an opposite side of the oxide layer with respect to the molybdenum (Mo) layer;

a third magnetic layer provided on an opposite side of the non-magnetic layer with respect to the first magnetic layer, and canceling a magnetic field applied from the first magnetic layer to the second magnetic layer; and

a layer containing silicon (Si) and boron (B) and provided on an opposite side of the first magnetic layer with respect to the third magnetic layer.

2. The device of claim 1 , wherein the second magnetic layer contains iron (Fe).

3. The device of claim 1 , wherein the second magnetic layer contains iron (Fe), cobalt (Co) and boron (B).

4. The device of claim 1 , wherein the first magnetic layer and the second magnetic layer have perpendicular magnetization.

5. The device of claim 1 , wherein the first magnetic layer and the third magnetic layer are antiferromagnetically coupled.

6. The device of claim 1 , wherein the stacked structure further comprises a buffer layer provided on an opposite side of the first magnetic layer with respect to the third magnetic layer.

7. The device of claim 6 , wherein the layer containing silicon (Si) and boron (B) is provided between the third magnetic layer and the buffer layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2022
From: OIKAWA, TADAAKI; EEH, YOUNGMIN; KITAGAWA, EIJI; ISODA, TAIGA; JUNG, KU YOUL; JUNG, JIN WON
To: KIOXIA CORPORATION; SK HYNIX INC.
Reel/Frame 058736/0084 →
Priority Claims (1)
JP 2021-043141 · Mar 17, 2021 · national
Continuity (1)
Related Publication 20220302205A1 · Sep 22, 2022
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