Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element
There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6 . The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5 A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5 C provided over the nonmagnetic spacer layer 5 . The first insertion layer 5 A and the second insertion layer 5 C are made of Fe 2 TiSi.
1. A magnetoresistive effect element comprising:
a first ferromagnetic layer as a fixed magnetization layer;
a second ferromagnetic layer as a free magnetization layer; and
a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer,
wherein the nonmagnetic spacer layer includes at least one of a first insertion layer provided under the nonmagnetic spacer layer and a second insertion layer provided over the nonmagnetic spacer layer, and
the first insertion layer and the second insertion layer are made of Fe 2 TiSi.
2. The magnetoresistive effect element according to claim 1 ,
wherein a thickness of each of the first insertion layer and the second insertion layer is equal to or smaller than 3 nm.
3. The magnetoresistive effect element according to claim 1 ,
wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer is made of a ferromagnetic material including a Heusler alloy.
4. The magnetoresistive effect element according to claim 1 ,
wherein the nonmagnetic spacer layer includes at least one metal element of Ag, Au, Cu, Cr, V, Al, W, and Pt.
5. The magnetoresistive effect element according to claim 1 ,
wherein the nonmagnetic spacer layer is made of MgO, Al 2 O 3 , TiO 2 , or HfO 2 , or is a tunnel barrier having a spinel structure.
6. The magnetoresistive effect element according to claim 5 ,
wherein the tunnel barrier having the spinel structure is made of any one of MgAl 2 O 4 , ZnAl 2 O 4 , γ-Al 2 O 3 , and MgGa 2 O 4 , or has a mixed crystal structure in which one of MgAl 2 O 4 , ZnAl 2 O 4 , γ-Al 2 O 3 , and MgGa 2 O 4 is provided as a main component.
7. A magnetic head comprising:
the magnetoresistive effect element according to claim 1 .
8. A sensor comprising:
the magnetoresistive effect element according to claim 1 .
9. A high frequency filter comprising:
the magnetoresistive effect element according to claim 1 .
10. An oscillation element comprising:
the magnetoresistive effect element according to claim 1 .