Magnetic memory device that suppresses diffusion of elements

1. A magnetic memory device comprising a magnetoresistance effect element,

the magnetoresistance effect element including:

a first ferromagnetic layer;

a second ferromagnetic layer;

a third ferromagnetic layer;

a first non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; and

a second non-magnetic layer between the second ferromagnetic layer and the third ferromagnetic layer,

wherein:

the second ferromagnetic layer is between the first ferromagnetic layer and the third ferromagnetic layer,

the third ferromagnetic layer includes:

a fourth ferromagnetic layer in contact with the second non-magnetic layer;

a third non-magnetic layer; and

a fourth non-magnetic layer between the fourth ferromagnetic layer and the third non-magnetic layer,

the first non-magnetic layer includes an oxide including magnesium (Mg),

a melting point of the fourth non-magnetic layer is higher than a melting point of the third non-magnetic layer, and

the second ferromagnetic layer and the third ferromagnetic later exhibit magnetization directions opposite to each other.

2. The device of claim 1 , wherein the fourth non-magnetic layer is amorphous.

3. The device of claim 1 , wherein the second non-magnetic layer includes at least one element selected from ruthenium (Ru), osmium (Os), rhodium (Rh), iridium (Ir), vanadium (V) and chromium (Cr).

4. The device of claim 1 , wherein the fourth non-magnetic layer includes at least one element selected from titanium (Ti), vanadium (V), chromium (Cr), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os) and iridium (Ir).

5. The device of claim 1 , wherein the fourth non-magnetic layer includes a nitride of at least one element selected from titanium (Ti), vanadium (V), chromium (Cr), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os) and iridium (Ir).

6. The device of claim 4 , wherein the third non-magnetic layer includes at least one element selected from platinum (Pt), nickel (Ni) and palladium (Pd).

7. The device of claim 1 , wherein the third ferromagnetic layer includes a fifth ferromagnetic layer between the third non-magnetic layer and the fourth non-magnetic layer.

8. The device of claim 7 , wherein the fourth ferromagnetic layer and the fifth ferromagnetic layer include cobalt (Co).

9. The device of claim 1 , wherein the first ferromagnetic layer and the second ferromagnetic layer include at least one element selected from iron (Fe), cobalt (Co) and nickel (Ni).

10. The device of claim 1 , wherein the magnetoresistance effect element demonstrates a first resistance in accordance with a first current flowing from the first ferromagnetic layer to the second ferromagnetic layer, and demonstrates a second resistance in accordance with a second current flowing from the second ferromagnetic layer to the first ferromagnetic layer.

11. The device of claim 10 , wherein the first resistance is lower than the second resistance.

12. The device of claim 1 , wherein the first ferromagnetic layer is arranged above the second ferromagnetic layer.

13. The device of claim 1 , wherein the first ferromagnetic layer is arranged below the second ferromagnetic layer.

14. The device of claim 1 , comprising memory cells, each of the memory cells including:

the magnetoresistance effect element; and

a switching element coupled in series to the magnetoresistance effect element.

15. The device of claim 14 , wherein the switching element is a two-terminal switching element.

16. The device of claim 14 , wherein the switching element is a metal oxide semiconductor (MOS) transistor.