Fabrication of a magnetic tunnel junction device
A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, a non-transitory computer-readable medium includes processor executable instructions. The instructions, when executed by a processor, cause the processor to initiate deposition of a capping material on a free layer of a magnetic tunneling junction structure to form a capping layer. The instructions, when executed by the processor, cause the processor to initiate oxidization of a first layer of the capping material to form a first oxidized layer of oxidized material.
1. A non-transitory computer-readable medium comprising processor executable instructions that, when executed by a processor, cause the processor to:
initiate deposition of a capping material on a free layer of a magnetic tunneling junction structure to form a capping layer; and
initiate formation of a first oxidized layer of oxidized material on the capping layer, wherein the first oxidized layer is positioned further from the free layer than a second layer of the capping material.
2. The non-transitory computer-readable medium of claim 1 , wherein the capping material includes magnesium.
3. The non-transitory computer-readable medium of claim 1 , wherein oxidizing the first layer of the capping material reduces a spin pumping effect of the free layer.
4. The non-transitory computer-readable medium of claim 1 , wherein the first oxidized layer is separated from the free layer by the second layer.
5. The non-transitory computer-readable medium of claim 1 , wherein the second layer includes a graded layer.
6. The non-transitory computer-readable medium of claim 5 , wherein the graded layer comprises a substantially non-magnetic material and an oxide of the substantially non-magnetic material.
7. The non-transitory computer-readable medium of claim 1 , wherein a barrier layer is adjacent to a first side of the free layer and the capping layer is adjacent to a second side of the free layer, the second side opposite to the first side.
8. The non-transitory computer-readable medium of claim 1 , wherein the capping layer includes a buffer layer, wherein the buffer layer is positioned intermediate to the first layer and the free layer.
9. The non-transitory computer-readable medium of claim 1 , wherein the free layer and the capping layer are included in a semiconductor device fabricated according to design information included in a data file, and wherein the capping layer includes the first oxidized layer.
10. The non-transitory computer-readable medium of claim 9 , wherein the processor executable instructions further cause the processor to receive the data file.
11. The non-transitory computer-readable medium of claim 9 , wherein the data file has a GDSII format.
12. The non-transitory computer-readable medium of claim 9 , wherein the semiconductor device is configured to be included in a device selected from a group consisting of a communications device, a computer, a set top box, a music player, a video player, an entertainment unit, a navigation device, a personal digital assistant (PDA), and a fixed location data unit.
13. The non-transitory computer-readable medium of claim 9 , wherein the free layer and the capping layer are included in a memory cell of a semiconductor memory array, wherein the semiconductor memory array is configured to be included a packaged semiconductor device, and wherein the packaged semiconductor device is configured to be located on a circuit board according to physical positioning information included in another data file.
14. A method comprising:
receiving a data file including design information corresponding to a semiconductor device; and
fabricating the semiconductor device according to the design information, wherein the semiconductor device comprises:
a barrier layer;
a free layer; and
a capping layer, wherein the free layer is adjacent to the barrier layer and the capping layer, and wherein the capping layer includes a first layer of a substantially non-magnetic material and a second layer of an oxide of the substantially non-magnetic material, and wherein the second layer is positioned further from the free layer than the first layer.
15. The method of claim 14 , wherein the data file has a GDSII format.
16. A method comprising:
receiving a data file including design information including physical positioning information of a packaged semiconductor device on a circuit board; and
manufacturing the circuit board configured to receive the packaged semiconductor device according to the design information, wherein the packaged semiconductor device includes a semiconductor memory array comprising at least one memory cell that comprises:
a barrier layer;
a free layer; and
a capping layer, wherein the free layer is adjacent to the barrier layer and the capping layer, and wherein the capping layer includes a first layer of a substantially non-magnetic material and a second layer of an oxide of the substantially non-magnetic material, and wherein the second layer is positioned further from the free layer than the first layer.
17. The method of claim 16 , wherein the data file has a GERBER format.
18. The method of claim 16 , further comprising integrating the circuit board into a device selected from a group consisting of a set top box, a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer.