Semiconductor nanoparticles and method of producing semiconductor nanoparticles
A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M 1 , M 2 , and Z. M 1 is at least one element selected from the group consisting of Ag, Cu, and Au. M 2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.
1. A semiconductor nanoparticle comprising:
a core; and
a shell covering a surface of the core and having a bandgap energy larger than a bandgap energy of the core, the shell being in heterojunction with the core, wherein
the semiconductor nanoparticle is adapted to emit photoluminescence upon being irradiated with light,
the core is made of a semiconductor that contains M 1 , M 2 , and Z, wherein M 1 is at least one element selected from the group consisting of Ag, Cu, and Au, M 2 is at least one element selected from the group consisting of Al, Ga, In, and Tl, and Z is at least one element selected from the group consisting of S, Se, and Te,
the shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element,
a photoluminescence lifetime of the semiconductor nanoparticle is 200 ns or less, and
a photoluminescence spectrum at a band-edge emission of the semiconductor nanoparticle has a peak at a wavelength from 510 nm to 593 nm with a full width at half maximum of 50 nm or less.
2. The semiconductor nanoparticle according to claim 1 , wherein the shell contains In as the Group 13 element.
3. The semiconductor nanoparticle according to claim 2 , wherein the shell contains S as the Group 16 element.
4. The semiconductor nanoparticle according to claim 1 , wherein the shell contains Ga as the Group 13 element.
5. The semiconductor nanoparticle according to claim 4 , wherein the shell contains S as the Group 16 element.
6. The semiconductor nanoparticle according to claim 1 , wherein the core contains Ag as M 1 , In as M 2 , and S as Z.
7. The semiconductor nanoparticle according to claim 1 , wherein the core further contains M 3 , wherein M 3 is at least one element selected from the group consisting of Zn and Cd.
8. A semiconductor nanoparticle comprising:
a core; and
a shell covering a surface of the core and having a bandgap energy larger than a bandgap energy of the core, the shell being in heterojunction with the core, wherein
the semiconductor nanoparticle is adapted to emit photoluminescence upon being irradiated with light,
the core is made of a semiconductor that contains m 1 , M 2 , and Z, wherein M 1 is at least one element selected from the group consisting of Ag, Cu, and Au, M 2 is at least one element selected from the group consisting of Al, Ga, In, and Tl, and Z is at least one element selected from the group consisting of S, Se, and Te,
the shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element,
a ratio M 1 /M 2 of the number of atoms of M 1 to the number of atoms of M 2 in the core is less than 1,
a photoluminescence lifetime of the semiconductor nanoparticle is 200 ns or less, and
a photoluminescence spectrum at a band-edge emission of the semiconductor nanoparticle has a peak at a wavelength from 510 nm to 593 nm with a full width at half maximum of 50 nm or less.
9. The semiconductor nanoparticle according to claim 1 , wherein one of an excitation spectrum and an absorption spectrum of the semiconductor nanoparticles exhibits an exciton peak.
10. A light-emitting device comprising a light conversion member and a semiconductor light-emitting element, wherein the light conversion member contains a plurality of the semiconductor nanoparticle according to claim 1 .
11. The light-emitting device according to claim 10 , wherein the semiconductor light-emitting element is a light-emitting diode chip.
12. The semiconductor nanoparticle according to claim 1 , wherein the shell does not form a solid solution with the core.
13. The semiconductor nanoparticle according to claim 1 , wherein the photoluminescence spectrum at the band-edge emission of the semiconductor nanoparticle has a peak at a wavelength from 510 nm to 550 nm with a full width at half maximum of 50 nm or less.
14. The semiconductor nanoparticle according to claim 1 , wherein the photoluminescence spectrum at the band-edge emission of the semiconductor nanoparticle has a peak at a wavelength from 530 nm to 540 nm with a full width at half maximum of 50 nm or less.
15. The semiconductor nanoparticle according to claim 1 , wherein the photoluminescence spectrum at the band-edge emission of the semiconductor nanoparticle has a peak at a wavelength from 581 nm to 593 nm with a full width at half maximum of 50 nm or less.
16. The semiconductor nanoparticle according to claim 8 , wherein the photoluminescence spectrum at the band-edge emission of the semiconductor nanoparticle has a peak at a wavelength from 510 nm to 550 nm with a full width at half maximum of 50 nm or less.
17. The semiconductor nanoparticle according to claim 8 , wherein the photoluminescence spectrum at the band-edge emission of the semiconductor nanoparticle has a peak at a wavelength from 530 nm to 540 nm with a full width at half maximum of 50 nm or less.
18. The semiconductor nanoparticle according to claim 8 , wherein the photoluminescence spectrum at the band-edge emission of the semiconductor nanoparticle has a peak at a wavelength from 581 nm to 593 nm with a full width at half maximum of 50 nm or less.
19. A semiconductor nanoparticle comprising:
a core; and
a shell covering a surface of the core and having a bandgap energy larger than a bandgap energy of the core, the shell being in heterojunction with the core, wherein
the semiconductor nanoparticle is adapted to emit photoluminescence upon being irradiated with light,
the core is made of a semiconductor that contains M 1 , M 2 , and Z, wherein M 1 is at least one element selected from the group consisting of Ag, Cu, and Au, M 2 is at least one element selected from the group consisting of Al, Ga, In, and Tl, and Z is at least one element selected from the group consisting of S, Se, and Te,
the shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element,
a photoluminescence lifetime of the semiconductor nanoparticle is 200 ns or less, and
a photoluminescence spectrum at a band-edge emission of the semiconductor nanoparticle has a peak at a wavelength from 430 nm to 470 nm with a full width at half maximum of 50 nm or less.
20. The semiconductor nanoparticle according to claim 19 , wherein the photoluminescence spectrum at the band-edge emission of the semiconductor nanoparticle has a peak at a wavelength from 440 nm to 460 nm with a full width at half maximum of 50 nm or less.
21. A semiconductor nanoparticle comprising:
a core; and
a shell covering a surface of the core and having a bandgap energy larger than a bandgap energy of the core, the shell being in heterojunction with the core, wherein
the semiconductor nanoparticle is adapted to emit photoluminescence upon being irradiated with light,
the core is made of a semiconductor that contains M 1 , M 2 , and Z, wherein m 1 is at least one element selected from the group consisting of Ag, Cu, and Au, M 2 is at least one element selected from the group consisting of Al, Ga, In, and Tl, and Z is at least one element selected from the group consisting of S, Se, and Te,
the shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element,
a photoluminescence lifetime of the semiconductor nanoparticle is 200 ns or less, and
a photoluminescence spectrum at a band-edge emission of the semiconductor nanoparticle has a peak at a wavelength from 600 nm to 680 nm with a full width at half maximum of 50 nm or less.
22. The semiconductor nanoparticle according to claim 21 , wherein the photoluminescence spectrum at the band-edge emission of the semiconductor nanoparticle has a peak at a wavelength from 630 nm to 650 nm with a full width at half maximum of 50 nm or less.