Light-emitting device and driving method thereof
In a light emitting device, luminance irregularities caused by fluctuation in threshold of TFTs for supplying a current to EL elements among pixels hinder the light emitting device from improving the image quality. A voltage equal to the threshold of a TFT 110 is held in capacitor means 111 in advance. When a video signal is inputted from a source signal line, the voltage held in the capacitor means is added to the signal, which is then applied to a gate electrode of the TFT 110 . Even when threshold is fluctuated among pixels, each threshold is held in the capacitor means 111 of each pixel, and therefore, influence of the threshold fluctuation can be removed. Since the threshold is stored in the capacitor means 111 alone and the voltage between two electrodes is not changed while a video signal is written, fluctuation in capacitance value has no influence.
1. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor and a sixth transistor;
a first wiring and a second wiring;
a capacitor; and
a light-emitting element,
wherein one of a source and a drain of the first transistor is electrically connected to the first wiring,
wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the fifth transistor and a first electrode of the capacitor,
wherein a second electrode of the capacitor, one of a source and a drain of the third transistor, a gate of the second transistor, and one of a source and a drain of the sixth transistor are electrically connected to each other,
wherein the other of the source and the drain of the sixth transistor is electrically connected to one of a source and a drain of the second transistor and one of a source and a drain of the fourth transistor,
wherein the other of the source and the drain of the fourth transistor is electrically connected to a first electrode of the light-emitting element, and
wherein the other of the source and the drain of the fifth transistor is electrically connected to the second wiring.
2. The semiconductor device according to claim 1 , further comprising a third wiring,
wherein the third wiring is electrically connected to a gate of the fifth transistor.
3. The semiconductor device according to claim 2 , further comprising a fourth wiring,
wherein the fourth wiring is electrically connected to a gate of the sixth transistor.
4. The semiconductor device according to claim 1 , further comprising a seventh transistor,
wherein the other of the source and the drain of the third transistor is electrically connected to one of a source and a drain of the seventh transistor.
5. The semiconductor device according to claim 1 , wherein a gate of the third transistor is electrically connected to the second electrode of the capacitor, the one of the source and the drain of the third transistor, the gate of the second transistor, and the one of the source and the drain of the sixth transistor.
6. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor and a sixth transistor;
a first wiring and a second wiring;
a capacitor; and
a light-emitting element,
wherein one of a source and a drain of the first transistor is electrically connected to the first wiring,
wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the fifth transistor and a first electrode of the capacitor,
wherein a second electrode of the capacitor, one of a source and a drain of the third transistor, a gate of the second transistor, and one of a source and a drain of the sixth transistor are electrically connected to each other,
wherein the other of the source and the drain of the sixth transistor is electrically connected to one of a source and a drain of the second transistor and one of a source and a drain of the fourth transistor,
wherein the other of the source and the drain of the fourth transistor is electrically connected to a first electrode of the light-emitting element,
wherein the other of the source and the drain of the fifth transistor is electrically connected to the second wiring,
wherein the first wiring is configured to supply a data signal, and
wherein the second wiring is configured to supply a predetermined potential.
7. The semiconductor device according to claim 6 , further comprising a third wiring,
wherein the third wiring is electrically connected to a gate of the fifth transistor.
8. The semiconductor device according to claim 7 , further comprising a fourth wiring,
wherein the fourth wiring is electrically connected to a gate of the sixth transistor.
9. The semiconductor device according to claim 6 , further comprising a seventh transistor,
wherein the other of the source and the drain of the third transistor is electrically connected to one of a source and a drain of the seventh transistor.
10. The semiconductor device according to claim 6 , wherein a gate of the third transistor is electrically connected to the second electrode of the capacitor, the one of the source and the drain of the third transistor, the gate of the second transistor, and the one of the source and the drain of the sixth transistor.
11. The semiconductor device according to claim 6 , wherein the predetermined potential is a high potential.
12. The semiconductor device according to claim 6 , wherein the second wiring is a current supply line.
13. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor and a sixth transistor;
a first wiring and a second wiring;
a capacitor; and
a light-emitting element,
wherein one of a source and a drain of the first transistor is directly connected to the first wiring,
wherein the other of the source and the drain of the first transistor is directly connected to one of a source and a drain of the fifth transistor and a first electrode of the capacitor,
wherein a second electrode of the capacitor, one of a source and a drain of the third transistor, a gate of the second transistor, and one of a source and a drain of the sixth transistor are directly connected to each other,
wherein the other of the source and the drain of the sixth transistor is directly connected to one of a source and a drain of the second transistor and one of a source and a drain of the fourth transistor,
wherein the other of the source and the drain of the fourth transistor is directly connected to a first electrode of the light-emitting element, and
wherein the other of the source and the drain of the fifth transistor is directly connected to the second wiring.
14. The semiconductor device according to claim 13 , further comprising a third wiring,
wherein the third wiring is directly connected to a gate of the fifth transistor.
15. The semiconductor device according to claim 14 , further comprising a fourth wiring,
wherein the fourth wiring is directly connected to a gate of the sixth transistor.
16. The semiconductor device according to claim 13 , further comprising a seventh transistor,
wherein the other of the source and the drain of the third transistor is directly connected to one of a source and a drain of the seventh transistor.
17. The semiconductor device according to claim 13 , wherein a gate of the third transistor is directly connected to the second electrode of the capacitor, the one of the source and the drain of the third transistor, the gate of the second transistor, and the one of the source and the drain of the sixth transistor.
18. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor and a sixth transistor;
a first wiring and a second wiring;
a capacitor; and
a light-emitting element,
wherein one of a source and a drain of the first transistor is directly connected to the first wiring,
wherein the other of the source and the drain of the first transistor is directly connected to one of a source and a drain of the fifth transistor and a first electrode of the capacitor,
wherein a second electrode of the capacitor, one of a source and a drain of the third transistor, a gate of the second transistor, and one of a source and a drain of the sixth transistor are directly connected to each other,
wherein the other of the source and the drain of the sixth transistor is directly connected to one of a source and a drain of the second transistor and one of a source and a drain of the fourth transistor,
wherein the other of the source and the drain of the fourth transistor is directly connected to a first electrode of the light-emitting element,
wherein the other of the source and the drain of the fifth transistor is directly connected to the second wiring,
wherein the first wiring is configured to supply a data signal, and
wherein the second wiring is configured to supply a predetermined potential.
19. The semiconductor device according to claim 18 , further comprising a third wiring,
wherein the third wiring is directly connected to a gate of the fifth transistor.
20. The semiconductor device according to claim 19 , further comprising a fourth wiring,
wherein the fourth wiring is directly connected to a gate of the sixth transistor.
21. The semiconductor device according to claim 18 , further comprising a seventh transistor,
wherein the other of the source and the drain of the third transistor is directly connected to one of a source and a drain of the seventh transistor.
22. The semiconductor device according to claim 18 , wherein a gate of the third transistor is directly connected to the second electrode of the capacitor, the one of the source and the drain of the third transistor, the gate of the second transistor, and the one of the source and the drain of the sixth transistor.
23. The semiconductor device according to claim 18 , wherein the predetermined potential is a high potential.
24. The semiconductor device according to claim 18 , wherein the second wiring is a current supply line.