Memory tile access and selection patterns
In one embodiment, an apparatus, such as a memory device, is disclosed. The apparatus includes multiple memory tiles and selection circuitry. Each memory tile has an array of storage components at intersections of a plurality of digit line conductors and a plurality of access line conductors. The selection circuitry includes line drivers that select a storage component of a memory tile based on a corresponding digit line conductor and a corresponding access line conductor to the storage component. The selection circuitry may select two or more storage components of a memory tile in a consecutive manner before selecting the storage components of a different memory tile.
1. A method comprising:
dividing a memory tile of a memory device into a plurality of memory patches, each memory patch comprising a set of storage components;
assigning a first subset of storage components of a first memory patch of the plurality of memory patches to a first group;
assigning a second subset of storage components of the first memory patch to a second group different than the first group; and
selecting multiple storage components from the first subset of storage components before selecting one or more storage components from the second subset of storage components, wherein the multiple storage components from the first subset of storage components correspond to different digit line conductors and different access line conductors, and the selecting the multiple storage components from the first subset of storage components being based at least in part on an access pattern.
2. The method of claim 1 , wherein assigning the first subset of storage components comprises:
assigning the first subset of storage components to the first group using a random assignment scheme, or a lookup table, or both.
3. The method of claim 1 , further comprising:
assigning the first group and the second group to a sequence of groups according to a selection order, the selection order spanning one or more time intervals; and
selecting, over the one or more time intervals, storage components from the first group and the second group based at least in part on the sequence of groups.
4. The method of claim 1 , wherein assigning the first subset of storage components comprises:
assigning, to the first group, memory addresses corresponding to the first subset of storage components, digit lines corresponding to the first subset of storage components, access lines corresponding to the first subset of storage components, or any combination thereof.
5. The method of claim 1 , further comprising:
dividing each of the plurality of memory patches into multiple subpatches, wherein the first subset of storage components is from a single subpatch of the multiple subpatches of the first memory patch.
6. The method of claim 5 , wherein at least two subpatches of the first memory patch comprise a different number of storage components.
7. The method of claim 1 , wherein at least two storage components from the second subset of storage components correspond to different digit line conductors, different access line conductors, or both.
8. The method of claim 1 , wherein a first portion of storage components at a common physical location of the memory device is assigned to the first group and a second portion of storage components at the common physical location of the memory device is assigned to the second group.
9. The method of claim 1 , wherein the access pattern indicates that a consecutive selection of storage components of the first group occurs before a consecutive selection of storage components of the second group.
10. The method of claim 1 , wherein assigning the first subset of storage components to the first group is based at least in part on a delay or distance between each of the first subset of storage components.
11. The method of claim 1 , wherein each memory patch comprises a same number of storage components.
12. An apparatus comprising:
a memory device;
a memory controller in electronic communication with the memory device, the memory controller configured to:
assign a plurality of memory cells of a memory tile of the memory device to a plurality of groups, wherein at least two memory cells assigned to a first group of the plurality of groups comprise different digit line conductors and different access line conductors;
assign at least two groups of the plurality of groups to a first class of a set of classes; and
select multiple memory cells associated with the first class based at least in part on a selection pattern, wherein the multiple memory cells of the first class are selected before selection of a memory cell associated with a second class of the set of classes.
13. The apparatus of claim 12 , wherein the memory controller is further configured to:
divide the memory tile into a plurality of memory patches, each memory patch comprising a set of the plurality of memory cells.
14. The apparatus of claim 12 , wherein the memory controller is further configured to:
assign a set of memory cells of the at least two groups to the first class based at least in part on corresponding digit line conductors of the set of memory cells, corresponding access line conductors of the set of memory cells, corresponding access circuits of the set of memory cells, or any combination thereof.
15. The apparatus of claim 14 , wherein at least two memory cells of the set of memory cells are associated with a same digit line conductor and a same access line conductor.
16. The apparatus of claim 14 , wherein each memory cell of the set of memory cells is associated with a different access circuit.
17. The apparatus of claim 12 , wherein the memory controller is further configured to:
assign a set of memory cells of the at least two groups to the first class based at least in part on a latency associated with selection of each of the set of memory cells.
18. A memory device comprising:
a set of memory tiles, each having a plurality of memory storage components;
a controller configured to:
assign a set of memory storage components of a first memory tile of the set of memory tiles to respective groups, wherein at least two memory storage components from the set of memory storage components is associated with a same digit line conductor, a same access line conductor, and a different access circuit;
assign classes to each of the respective groups; and
select memory storage components of the first memory tile according to the assigned classes.
19. The memory device of claim 18 , wherein the classes are assigned based at least in part on corresponding digit lines of the set of memory storage components, corresponding access lines of the set of memory storage components, corresponding access circuits of the set of memory storage components, a latency associated with selection of each of the set of memory storage components, a distance between memory storage components of the set of memory storage components, or any combination thereof.
20. The memory device of claim 18 , wherein the controller is further configured to:
assign a first class to a first group and a second group; and
consecutively select a first memory storage component associated with the first group and a second memory storage component associated with the second group.