RF resonators and filters

1. A filter package comprising an array of piezoelectric films sandwiched between an array of upper electrodes and lower electrodes:

the individual piezoelectric films and the upper electrodes being separated by a passivation material; the lower electrode being coupled to an interposer with a first cavity between the lower electrodes and the interposer; the filter package further comprising a silicon wafer of known thickness attached over the upper electrodes with an array of upper cavities between the silicon wafer and a silicon cover; each upper cavity aligned with a piezoelectric film in the array of piezoelectric films, the upper cavities having side walls comprising the passivation material.

2. The filter package of claim 1 , wherein the piezoelectric films comprise Ba x Sr (1-x) TiO 3 (BST).

3. The filter package of claim 1 , wherein the piezoelectric films each comprise a single crystal.

4. The filter package of claim 1 wherein the lower electrodes comprise aluminum.

5. The filter package of claim 4 wherein edges of the lower electrodes are stiffened by an under bump metallization material comprising a titanium adhesion layer followed by at least one of tungsten and tantalum.

6. The filter package of claim 1 wherein the lower electrode is coupled to the interposer by solder tipped copper pillars.

7. The filter package of claim 6 wherein an under bump metallization material comprising tungsten or tantalum connects the lower electrode to the copper pillars.

8. The filter package of claim 1 wherein the upper electrodes comprise aluminum.

9. The filter package of claim 1 , wherein the passivation material comprises either polyimide or Benzocyclobutene (BCB).

10. The filter package of claim 1 further comprising a first adhesion layer of titanium between the piezoelectric membrane and the lower electrode.

11. The filter package of claim 10 wherein the first adhesion layer comprises titanium.

12. The filter package of claim 1 wherein the silicon wafer is attached to the upper electrode by an adhesion layer adjacent to the upper electrode, a bonding layer and a further adhesion layer attached to the silicon wafer thereby creating a composite electrode.

13. The filter package of claim 12 wherein the adhesion layer and further adhesion layer comprise Ti having a thickness in the range of 5 nm to 50 nm with 5% tolerances.

14. The filter package of claim 13 wherein the bonding layer is selected from the group comprising Au—In alloy, Au and AlN.

15. The filter package of claim 1 wherein the silicon wafer has a thickness in the range of 1 micron to 10 microns and is coupled to the silicon cover by the passivation material and/or silicon oxide.

16. The filter package of claim 15 wherein the silicon cover is 90 microns thick.

17. The filter package of claim 1 encapsulated in polymer overfill, wherein a barrier between the filter array and the interposer provides a perimeter wall of the lower cavity, wherein said barrier comprises at least one of an SU8 gasket around the filter array that is attached to the lower electrode and an epoxy dam attached to the interposer.

18. The filter package of claim 1 , wherein the interposer comprises at least one via layer and one routing layer of copper encapsulated a dielectric matrix.

19. The filter package of claim 18 , wherein the interposer comprises a polymer matrix selected from the group consisting of polyimide, epoxy, BT (Bismaleimide/Triazine), Polyphenylene Ether (PPE), Polyphenylene Oxide (PPO) and their blends.

20. The filter package of claim 19 , wherein the interposer further comprises glass fibers and/or ceramic fillers.