Semiconductor device with nanostructures and methods of forming the same
A semiconductor device is provided, which includes a substrate and at least one nanostructure. The substrate has sensing pixels, and each of the sensing pixels has a photo sensing region for absorbing incident light. The nanostructure is directly on the photo sensing region. The nanostructure of each of the sensing pixels has a projected portion on an upper surface of the substrate, and a circle equivalent diameter of the projected portion of the nanostructure of each of the sensing pixels is substantially within a wavelength range of 100 nm to 1900 nm of the incident light configured to enter the substrate through the nanostructure.
1. A semiconductor device, comprising:
a substrate having a plurality of sensing pixels, each of the sensing pixels having a photo sensing region for absorbing incident light; and
a plurality of nanostructures directly on the photo sensing region and arranged in a hexagonal arrangement, an octagonal arrangement, a triangular arrangement, or combinations thereof.
2. The semiconductor device of claim 1 , wherein at least one of the nanostructures comprises silicon oxide, hafnium oxide, silicon, silicon germanium, or combinations thereof.
3. The semiconductor device of claim 1 , wherein at least one of the nanostructures comprises at least one protrusion nanostructure on the upper surface of the substrate.
4. The semiconductor device of claim 1 , further comprising:
a dielectric layer on the substrate and covering at least one of the nanostructures; and
a microlens layer on the dielectric layer.
5. The semiconductor device of claim 4 , wherein the dielectric layer comprises silicon oxide, undoped silica glass (USG), hafnium oxide, silicon, silicon germanium, vacuum, or combinations thereof.
6. The semiconductor device of claim 1 , wherein the sensing pixels comprises a plurality of visible light sensing pixels, at least one of nanostructures has a projected portion on an upper surface of the substrate, and a circle equivalent diameter of the projected portion is in a range of about 400 nm to about 700 nm.
7. The semiconductor device of claim 1 , wherein at least one of the nanostructures is pillar-shaped.
8. The device of claim 1 , wherein at least one of the nanostructures has a projected portion on an upper surface of the substrate and a circle equivalent diameter of the projected portion is substantially within a range from about 100 nm to about 1900 nm.
9. The device of claim 1 , wherein at least one of the nanostructures has a projected portion on an upper surface of the substrate and a circle equivalent diameter De of the projected portion is defined by equation De=(4A/π) 1/2 , where A is an area of the projected portion.
10. A device, comprising:
a substrate having a plurality of sensing pixels, each of the sensing pixels having a photo sensing region;
a plurality of nanostructures directly on the photo sensing region, wherein the nanostructures are arranged in a polygonal arrangement;
a dielectric layer over the nanostructures;
a light filter layer over the dielectric layer; and
a microlens layer over the dielectric layer.
11. The device of claim 10 , wherein at least one nanostructures has a projected portion on an upper surface of the photo sensing region, a circle equivalent diameter of the projected portion is in a range from about 100 nm to about 1900 nm, and the circle equivalent diameter of the projected portion is defined by equation De=(4A/π)½, where De is the circle equivalent diameter of the projected portion and A is an area of the projected portion.
12. The device of claim 10 , wherein the microlens layer is superimposed over at least one of the nanostructures.
13. The device of claim 10 , wherein the light filter layer has a passband, at least one of the nanostructures has a projected portion on an upper surface of the photo sensing region, a circle equivalent diameter of the projected portion is substantially within the passband of the light filter layer, and the circle equivalent diameter of the projected portion is defined by equation De=(4A/π)½, where De is the circle equivalent diameter of the projected portion and A is an area of the projected portion.
14. The device of claim 10 , wherein at least one of the nanostructures protrudes from a top surface of the photo sensing region.
15. The device of claim 10 , wherein the nanostructures are spaced from each other.
16. The device of claim 10 , wherein the nanostructures are in contact with each other.
17. A device, comprising:
a substrate having a plurality of sensing pixels, each of the sensing pixels having a photo sensing region;
a plurality of nanostructures over the photo sensing region, wherein the nanostructures are in contact with each other, wherein at least one of the nanostructures has a projected portion on an upper surface of the substrate and a circle equivalent diameter of the projected portion is about (4A/π) 1/2 , where A is an area of the projected portion; and
a light filter layer over the nanostructures.
18. The device of claim 17 , wherein the circle equivalent diameter of the projected portion is in a range from about 100 nm to about 1900 nm.
19. The device of claim 17 , wherein the nanostructures are arranged in a hexagonal arrangement, an octagonal arrangement, a triangular arrangement, or combinations thereof.
20. The device of claim 17 , further comprising a dielectric layer over the nanostructures, wherein the light filter layer is over the dielectric layer.