3D semiconductor device and structure
A 3D semiconductor device, the device including: a first die including a first transistors layer and a first interconnection layer; and a second die overlaying the first die, the second die including a second transistors layer and a second interconnection layer, where the second die thickness is less than 2 microns, and where the first die is substantially larger than the second die.
1. A 3D semiconductor device, the device comprising:
a first die comprising a first transistors layer and a first interconnection layer; and
a second die overlaying said first die, said second die comprising a second transistors layer and a second interconnection layer,
wherein said second die thickness is less than 20 microns,
wherein said first die is substantially larger than said second die, and
wherein said second die comprises a cut layer, said cut layer provides for future die thinning.
2. The device according to claim 1 ,
wherein said second die is directly connected to said first die, and
said device further comprising:
a third die directly connected to said first die.
3. The device according to claim 1 , further comprising:
a thermal isolative layer disposed between said first die and said second die,
wherein said isolative layer has a thermal conductivity less than 0.5 W/m-K.
4. The device according claim 1 ,
wherein said second die is a memory die.
5. The device according claim 1 ,
wherein said overlaying comprises a face-to-face (F2F) die orientation.
6. The device according claim 1 ,
wherein said first die is embedded as part of a wafer having a diameter larger than 150 mm.
7. The device according claim 1 ,
wherein said second die is a pre-tested die.
8. A 3D semiconductor device, the device comprising:
a first strata comprising a first transistors layer and a first interconnection layer, and
a second strata overlaying said first strata, said second strata comprising a second transistors layer and a second interconnection layer,
wherein said first strata is a wafer having a diameter larger than 150 mm, and
wherein said second strata is an isolated die having a size smaller than 30 mm by 30 mm,
wherein said second strata has a thickness less than 20 microns, and
wherein said second strata comprises a cut layer, said cut layer provides for future die thinning.
9. The device according to claim 8 ,
wherein said die is directly connected to said first strata, and
said device further comprising:
a third die directly connected to said first strata.
10. The device according to claim 8 , further comprising:
a thermal isolative layer disposed between said first strata and said die,
wherein said isolative layer has a thermal conductivity less than 0.5 W/m-K.
11. The device according claim 8 ,
wherein said die is a memory die.
12. The device according claim 8 ,
wherein said overlaying comprises a face-to-face (F2F) die to wafer orientation.
13. The device according claim 8 ,
wherein said first strata is embedded as part of a wafer having a diameter larger than 150 mm.
14. The device according claim 8 ,
wherein said die is a pre-tested die.
15. A 3D semiconductor device, the device comprising:
a first strata comprising a first transistors layer and a first interconnection layer, and
a second strata overlaying said first strata, said second strata comprising a second transistors layer and a second interconnection layer,
wherein said second strata thickness is less than 20 microns,
wherein said second strata comprises a pre-tested die, and
wherein said second strata comprises a cut layer, said cut layer provides for future die thinning.
16. The device according to claim 15 ,
wherein said pre-tested die is a known good die by being tested before becoming part of said device.
17. The device according to claim 15 ,
wherein said die is directly connected to said first strata, and
said device further comprising:
a third die directly connected to said first strata.
18. The device according to claim 15 , further comprising:
a thermal isolative layer disposed between said first strata and said die,
wherein said isolative layer has a thermal conductivity less than 0.5 W/m-K.
19. The device according claim 15 ,
wherein said overlaying comprises a face-to-face (F2F) die to strata orientation.
20. The device according claim 15 ,
wherein said first strata is embedded as part of a wafer having a diameter larger than 150 mm.