Stacked vertical transport field-effect transistor logic gate structures with shared epitaxial layers
A semiconductor structure comprises two or more vertical fins, a bottom epitaxial layer surrounding a bottom portion of a given one of the two or more vertical fins, a top epitaxial layer surrounding a top portion of the given one of the two or more vertical fins, a shared epitaxial layer surrounding a middle portion of the given one of the two or more vertical fins, and a connecting layer contacting the bottom epitaxial layer and the top epitaxial layer, the connecting layer being disposed to a lateral side of the two or more vertical fins.
1. A two-input logic gate, comprising:
two two-channel n-type field-effect transistors, the two two-channel n-type field-effect transistors comprising a first vertical fin, a second vertical fin, a first bottom epitaxial layer surrounding a bottom portion of the first vertical fin and the second vertical fin, a first top epitaxial layer surrounding a top portion of the first vertical fin, a second top epitaxial layer surrounding a top portion of the second vertical fin, a first shared epitaxial layer surrounding a middle portion of the first vertical fin, and a second shared epitaxial layer surrounding a middle portion of the second vertical fin;
two two-channel p-type field-effect transistors, the two two-channel p-type field-effect transistors comprising a third vertical fin, a fourth vertical fin, a second bottom epitaxial layer surrounding a bottom portion of the third vertical fin and the fourth vertical fin, a third top epitaxial layer surrounding a top portion of the third vertical fin, a fourth top epitaxial layer surrounding a middle portion of the fourth vertical fin, a third shared epitaxial layer surrounding a middle portion of the third vertical fin, a fourth shared epitaxial layer surrounding a middle portion of the fourth vertical fin, and an interlayer dielectric layer separating the third shared epitaxial layer and the fourth shared epitaxial layer; and
a connecting layer contacting at least one of the first bottom epitaxial layer and the second bottom epitaxial layer, the connecting layer further contacting one of (i) the first top epitaxial layer and the second top epitaxial layer of the two two-channel n-type field-effect transistors and (ii) the third top epitaxial layer and the fourth top epitaxial layer of the two two-channel p-type field effect transistors.
2. The two-input logic gate of claim 1 , wherein the two-input logic gate comprises a two-input NAND logic gate.
3. The two-input logic gate of claim 2 , further comprising:
a first input of the two-input NAND logic gate connected to gate stacks of a first one of the two two-channel n-type field-effect transistors and a first one of the two two-channel p-type field effect transistors;
a second input of the two-input NAND logic gate connected to gate stacks of a second one of the two two-channel n-type field-effect transistors and a second one of the two two-channel p-type field effect transistors; and
an output of the two-input NAND logic gate connected to the second bottom epitaxial layer and the third and fourth top epitaxial layers of the two two-channel p-type field-effect transistors via the connecting layer, and to the first bottom epitaxial layer of the first and second vertical fins of the two two-channel n-type field-effect transistors.
4. The two-input logic gate of claim 3 , further comprising:
a first contact connected to the third and fourth shared epitaxial layers of the two two-channel p-type field-effect transistors; and
a second contact connected to the first and second top epitaxial layers of the first and second vertical fins of the two two-channel n-type field-effect transistors.
5. The two-input logic gate of claim 1 , wherein the two-input logic gate comprises a two-input NOR logic gate.
6. The two-input logic gate of claim 5 , further comprising:
a first input of the two-input NOR logic gate connected to gate stacks of a first one of the two two-channel n-type field-effect transistors and a first one of the two two-channel p-type field effect transistors;
a second input of the two-input NOR logic gate connected to gate stacks of a second one of the two two-channel n-type field-effect transistors and a second one of the two two-channel p-type field effect transistors;
an output of the two-input NOR logic gate connected to the first bottom epitaxial layer and the first and second top epitaxial layers of the two two-channel n-type field-effect transistors via the connecting layer, and to one of the third shared epitaxial layer of the third vertical fin of a first one of the two two-channel p-type field-effect transistors.
7. The two-input logic gate of claim 6 , further comprising:
a first contact connected to the fourth shared epitaxial layer of the fourth vertical fin of a second one of the two two-channel p-type field-effect transistors; and
a second contact connected to the first shared epitaxial layer of the first vertical fin and the second shared epitaxial layer of the second vertical fin of the two two-channel n-type field-effect transistors.
8. The two-input logic gate of claim 1 , wherein the first shared epitaxial layer and the second shared epitaxial layer are connected.
9. The two-input logic gate of claim 8 , further comprising a first metal layer surrounding the first shared epitaxial layer, a second metal layer surrounding the second shared epitaxial layer, a third metal layer surrounding the third shared epitaxial layer, and a fourth metal layer surrounding the fourth shared epitaxial layer, wherein the interlayer dielectric layer is disposed between the third metal layer and the further metal layer.
10. The two-input logic gate of claim 9 , wherein the third metal layer and the fourth metal layer are connected to a power rail disposed at an end of the third and fourth vertical fins.
11. The two-input logic gate of claim 1 , wherein:
a first region of the first vertical fin between the first bottom epitaxial layer and the first shared epitaxial layer comprises a first fin channel for a first one of the two two-channel n-type field-effect transistors;
a first region of the second vertical fin between the first bottom epitaxial layer and the second shared epitaxial layer comprises a second fin channel for the first one of the two two-channel n-type field-effect transistors;
a second region of the first vertical fin between the first shared epitaxial layer and the first top epitaxial layer comprises a second fin channel for a second one of the two two-channel n-type field-effect transistors; and
a second region of the second vertical fin between the second shared epitaxial layer and the second top epitaxial layer comprises a second fin channel for the second one of the two two-channel n-type field-effect transistors.
12. The two-input logic gate of claim 11 , wherein:
a first region of the third vertical fin between the second bottom epitaxial layer and the third shared epitaxial layer comprises a first fin channel for a first one of the two two-channel p-type field-effect transistors;
a second region of the third vertical fin between the third shared epitaxial layer and the third top epitaxial layer comprises a second fin channel for the first one of the two two-channel p-type field-effect transistors;
a first region of the fourth vertical fin between the second bottom epitaxial layer and the fourth shared epitaxial layer comprises a first fin channel for a second one of the two two-channel p-type field-effect transistors; and
a second region of the fourth vertical fin between the fourth shared epitaxial layer and the fourth top epitaxial layer comprises a second fin channel for the second one of the two two-channel p-type field-effect transistors.
13. The two-input logic gate of claim 11 , wherein the first one of the two two-channel n-type field-effect transistors is connected in series with the second one of the two two-channel n-type field-effect transistors.
14. The two-input logic gate of claim 1 , further comprising an additional interlayer dielectric layer separating the first shared epitaxial layer and the second shared epitaxial layer.
15. The two-input logic gate of claim 14 , further comprising a first metal layer surrounding the first shared epitaxial layer, a second metal layer surrounding the second shared epitaxial layer, a third metal layer surrounding the third shared epitaxial layer, and a fourth metal layer surrounding the fourth shared epitaxial layer, wherein the interlayer dielectric layer is disposed between the third metal layer and the further metal layer, and wherein the additional interlayer dielectric layer is disposed between the first metal layer and the second metal layer.
16. The two-input logic gate of claim 15 , wherein the third metal layer and the fourth metal layer are connected to a power rail disposed at an end of the third and fourth vertical fins.
17. The two-input logic gate of claim 1 , wherein:
a first region of the first vertical fin between the first bottom epitaxial layer and the first shared epitaxial layer comprises a first fin channel for a first one of the two two-channel n-type field-effect transistors;
a second region of the first vertical fin between the first shared epitaxial layer and the first top epitaxial layer comprises a second fin channel for the first one of the two two-channel n-type field-effect transistors;
a first region of the second vertical fin between the first bottom epitaxial layer and the second shared epitaxial layer comprises a first fin channel for a second one of the two two-channel n-type field-effect transistors; and
a second region of the second vertical fin between the second shared epitaxial layer and the second top epitaxial layer comprises a second fin channel for the second one of the two two-channel n-type field-effect transistors.
18. The two-input logic gate of claim 17 , wherein:
a first region of the third vertical fin between the second bottom epitaxial layer and the third shared epitaxial layer comprises a first fin channel for a first one of the two two-channel p-type field-effect transistors;
a second region of the third vertical fin between the third shared epitaxial layer and the third top epitaxial layer comprises a second fin channel for the first one of the two two-channel p-type field-effect transistors;
a first region of the fourth vertical fin between the second bottom epitaxial layer and the fourth shared epitaxial layer comprises a first fin channel for a second one of the two two-channel p-type field-effect transistors; and
a second region of the fourth vertical fin between the fourth shared epitaxial layer and the fourth top epitaxial layer comprises a second fin channel for the second one of the two two-channel p-type field-effect transistors.
19. The two-input logic gate of claim 17 , wherein the first one of the two two-channel n-type field-effect transistors is connected in series with the second one of the two two-channel n-type field-effect transistors.