IP Library Granted Patent US 9,991,219
Granted Patent B2
US 9,991,219 · App. 15/478,374 · Granted Jun 5, 2018

Fan-out semiconductor package module

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,991,219
App. No.
15/478,374
Granted
Jun 5, 2018
Kind
B2
Abstract

A fan-out semiconductor package module includes: a fan-out semiconductor package including a first interconnection member having a through-hole, a semiconductor chip disposed in the through-hole, an encapsulant encapsulating at least portions of the first interconnection member and the semiconductor chip, a second interconnection member disposed on the first interconnection member and the semiconductor chip, a third interconnection member disposed on the encapsulant, first connection terminals disposed on the second interconnection member, and second connection terminals disposed on the third interconnection member, the first to third interconnection members including, respectively, redistribution layers electrically connected to connection pads of the semiconductor chip; and a component package stacked on the fan-out semiconductor package and including a wiring substrate connected to the second interconnection member through the first connection terminals and a plurality of mounted components mounted on the wiring substrate.

Claims (26)

1. A fan-out semiconductor package module comprising:

a fan-out semiconductor package including a first interconnection member having a through-hole, a semiconductor chip disposed in the through-hole of the first interconnection member and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface, an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip, a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip, first connection terminals disposed on the second interconnection member, and second connection terminals disposed on the encapsulant, the first interconnection member and the second interconnection member including, respectively, redistribution layers electrically connected to the connection pads of the semiconductor chip; and

a component package including a wiring substrate disposed above the second interconnection member and connected to the second interconnection member through the first connection terminals and at least one component disposed on the wiring substrate and electrically connected to the wiring substrate,

wherein the first interconnection member includes a first insulating layer, a first redistribution layer in contact with the second interconnection member and embedded in a first surface of the first insulating layer, and a second redistribution layer disposed on a second surface of the first insulating layer opposing the first surface of the first insulating layer.

2. The fan-out semiconductor package module of claim 1 , wherein at least one connection pad and second connection terminal are electrically connected to each other by an electrical pathway traversing the wiring substrate and the first interconnection member.

3. The fan-out semiconductor package module of claim 2 , wherein the electrical pathway traverses the connection pad of the semiconductor chip, the second interconnection member, the first connection terminal, the wiring substrate, the first interconnection member, and the second connection terminal.

4. The fan-out semiconductor package module of claim 2 , wherein the wiring substrate has a passive component embedded therein, and

the electrical pathway is connected to the passive component.

5. The fan-out semiconductor package module of claim 2 , wherein the wiring substrate includes a first wiring substrate connected to the first connection terminal, a second wiring substrate disposed on the first wiring substrate, and a third connection terminal disposed between the first wiring substrate and the second wiring substrate and connecting the first wiring substrate and the second wiring substrate to each other,

a passive component mounted on the first wiring substrate is disposed between the first wiring substrate and the second wiring substrate, and

the electrical pathway is connected to the passive component mounted on the first wiring substrate.

6. The fan-out semiconductor package module of claim 1 , wherein the component package includes a memory chip electrically connected to the semiconductor chip.

7. The fan-out semiconductor package module of claim 1 , wherein the first connection terminal is surrounded by an underfill resin formed between the second interconnection member and the wiring substrate.

8. The fan-out semiconductor package module of claim 1 , wherein the fan-out semiconductor package further includes a third interconnection member disposed on the encapsulant and having the second connection terminals connected thereto,

wherein the number of first connection terminal pads of the second interconnection member connected to the first connection terminals is greater than the number of second connection terminal pads of the third interconnection member connected to the second connection terminals.

9. The fan-out semiconductor package module of claim 1 , wherein the first interconnection member further includes a second insulating layer disposed on the first insulating layer and covering the second redistribution layer and a third redistribution layer disposed on the second insulating layer.

10. The fan-out semiconductor package module of claim 9 , wherein the second redistribution layer is disposed on a level between the active surface and the inactive surface of the semiconductor chip.

11. The fan-out semiconductor package module of claim 1 , wherein a distance between the redistribution layer of the second interconnection member and the first redistribution layer is greater than that between the redistribution layer of the second interconnection member and the connection pad, the distances being measured between top surfaces of the corresponding layers.

12. The fan-out semiconductor package module of claim 1 , wherein the first redistribution layer has a thickness greater than that of the redistribution layer of the second interconnection member.

13. The fan-out semiconductor package module of claim 1 , wherein an upper surface of the first redistribution layer is disposed on a level below an upper surface of the connection pad.

14. The fan-out semiconductor package module of claim 1 , wherein the first interconnection member includes the first insulating layer, the first redistribution layer and the second redistribution layer disposed on opposite surfaces of the first insulating layer, respectively, a second insulating layer disposed on the first insulating layer and covering the first redistribution layer, and a third redistribution layer disposed on the second insulating layer.

15. The fan-out semiconductor package module of claim 14 , wherein the first interconnection member further includes the third insulating layer disposed on the first insulating layer and covering the second redistribution layer and a fourth redistribution layer disposed on the third insulating layer.

16. The fan-out semiconductor package module of claim 14 , wherein the first insulating layer has a thickness greater than that of the second insulating layer.

17. The fan-out semiconductor package module of claim 14 , wherein the third redistribution layer has a thickness greater than that of the redistribution layer of the second interconnection member.

18. The fan-out semiconductor package module of claim 14 , wherein the first redistribution layer is disposed on a level between the active surface and the inactive surface of the semiconductor chip.

19. The fan-out semiconductor package module of claim 14 , wherein an upper surface of the third redistribution layer is disposed on a level above an upper surface of the connection pad.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 3, 2019
From: SAMSUNG ELECTRO-MECHANICS CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 049350/0756 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2017
From: SEOL, YONG JIN; LEE, YONG KOON
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 041841/0196 →