Manufacturing method of semiconductor package

1. A manufacturing method of a semiconductor package, comprising:

roughening a side surface and a rear surface of a substrate;

locating, on the substrate, a semiconductor device having an external terminal provided on a top surface thereof;

forming a resin insulating layer covering the semiconductor device;

forming a conductive layer on the resin insulating layer;

roughening a surface of the conductive layer;

forming an opening, exposing the external terminal, in the conductive layer with the roughened surface and the resin insulating layer;

removing the roughened surface of the conductive layer after forming the opening;

performing a plasma treatment on a bottom surface of the opening;

performing a chemical treatment on the bottom surface of the opening after the plasma treatment; and

forming a conductive plating layer on the side surface of the substrate, the rear surface of the substrate and the surface of the conductive layer after removing the roughened surface of the conductive layer, the conductive plating layer being connected with the external terminal exposed in the opening.

2. The manufacturing method of a semiconductor package according to claim 1 , wherein the resin insulating layer contains a filler.

3. The manufacturing method of a semiconductor package according to claim 2 , wherein the filler contains an inorganic material.

4. The manufacturing method of a semiconductor package according to claim 3 , wherein the plasma treatment is performed with plasma containing fluorine and oxygen.

5. The manufacturing method of a semiconductor package according to claim 4 , wherein the chemical treatment is performed with an alkaline chemical containing potassium and manganese or an alkaline chemical containing sodium and manganese.

6. The manufacturing method of a semiconductor package according to claim 5 , wherein the opening is formed by irradiating the resin insulating layer with a laser light.

7. The manufacturing method of a semiconductor package according to claim 6 , wherein the opening is formed by irradiating the conductive layer with the laser light.

8. The manufacturing method of a semiconductor package according to claim 7 , wherein the opening is formed by irradiating a part of the roughened surface of the conductive layer with the laser light.

9. The manufacturing method of a semiconductor package according to claim 3 , wherein the chemical treatment includes:

swelling a part of the resin insulating layer;

etching the swollen part of the resin insulating layer; and

neutralizing the chemical used for the etching.

10. The manufacturing method of a semiconductor package according to claim 9 , wherein the etching is performed with an alkaline chemical containing potassium and manganese or an alkaline chemical containing sodium and manganese.

11. The manufacturing method of a semiconductor package according to claim 10 , wherein the opening is formed by irradiating the resin insulating layer with a laser light.

12. The manufacturing method of a semiconductor package according to claim 11 , wherein the opening is formed by irradiating the conductive layer with the laser light.

13. The manufacturing method of a semiconductor package according to claim 12 , wherein the opening is formed by irradiating a part of the roughened surface of the conductive layer with the laser light.

14. The manufacturing method of a semiconductor package according to claim 9 , wherein the opening is formed by irradiating the resin insulating layer with a laser light.

15. The manufacturing method of a semiconductor package according to claim 14 , wherein the opening is formed by irradiating the conductive layer with the laser light.

16. The manufacturing method of a semiconductor package according to claim 15 , wherein the opening is formed by irradiating a part of the roughened surface of the conductive layer with the laser light.

17. The manufacturing method of a semiconductor package according to claim 1 , wherein the plasma treatment is performed with plasma containing fluorine and oxygen.

18. The manufacturing method of a semiconductor package according to claim 17 , wherein the chemical treatment is performed with an alkaline chemical containing potassium and manganese or an alkaline chemical containing sodium and manganese.

19. The manufacturing method of a semiconductor package according to claim 1 , wherein the opening is formed by irradiating the resin insulating layer with a laser light.

20. The manufacturing method of a semiconductor package according to claim 19 ,

wherein the opening is formed by irradiating a part of the roughened surface of the conductive layer with the laser light.