Low temperature method for hermetically joining non-diffusing ceramic materials in multi-layer plate devices
A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the joining atmosphere, and other factors. The ceramic pieces may be on a non-diffusable type, such as aluminum nitride, alumina, beryllium oxide, and zirconia, and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.
1. A method for the manufacture of a ceramic multi-layer plate device used as a plate in an electrostatic chuck, or in a heater, or other wafer support, used in semiconductor wafer processing, said method comprising the steps of:
arranging a plurality of plate components into a stack, wherein said plurality of plate components comprise an upper plate layer, a lower plate layer, and an annular brazing layer disposed between said upper plate layer and said lower plate layer between the outer periphery of said upper plate layer and said lower plate layer thereby defining an inner space between said upper plate layer and said lower plate layer within said brazing layer, said inner space comprising at least in part empty space, wherein said upper plate layer comprises a ceramic from the group of aluminum nitride, alumina, beryllium oxide, and zirconia, and said lower plate layer comprises a ceramic from the group of aluminum nitride, alumina, beryllium oxide, and zirconia, and wherein said aluminum brazing element comprises 99% by weight or greater aluminum;
placing the components of said joining pre-assembly into a process chamber;
removing oxygen from said process chamber;
heating at least said aluminum brazing element of said joining pre-assembly to a first joining temperature of between 770 C and 1200 C, thereby joining said upper plate layer to said lower plate layer with a hermetically sealed aluminum joint which hermetically seals said inner space from an area outside of said brazing layer across said joint, and wherein said aluminum has not diffused into said upper plate layer or said lower plate layer, and wherein the thickness of said final joint is greater than zero.
2. The method of claim 1 wherein the step of removing oxygen from said process chamber comprises applying a pressure of lower than 1×10E-4 Torr to said process chamber.
3. The method of claim 1 wherein the step of removing oxygen from said process chamber comprises applying a pressure of lower than 1×10E-5 Torr to said process chamber.
4. The method of claim 1 wherein the step of removing oxygen from said process chamber comprises purging and re-filling the chamber with pure, dehydrated inert gas.
5. The method of claim 1 wherein the step of removing oxygen from said process chamber comprises purging and re-filling the chamber with purified hydrogen.
6. The method of claim 1 wherein said step of heating said joining pre-assembly to a first joining temperature comprises heating said joining pre-assembly for a duration of between 10 minutes and 2 hours.
7. The method of claim 1 wherein said step of heating said joining pre-assembly to a first joining temperature comprises heating said joining pre-assembly for a duration of between 30 minutes and 1 hour.
8. A method for the manufacture of a ceramic multi-layer plate device used as a plate in an electrostatic chuck, or in a heater, or other wafer support, used in semiconductor wafer processing, said method comprising the steps of:
arranging a plurality of plate components into a stack, wherein said plurality of plate components comprise an upper plate layer, a lower plate layer, and an annular brazing layer disposed between said upper plate layer and said lower plate layer between the outer periphery of said upper plate layer and said lower plate layer thereby defining an inner space between said upper plate layer and said lower plate layer within said brazing layer, said inner space comprising at least in part empty space, wherein said upper plate layer comprises a ceramic from the group of aluminum nitride, alumina, beryllium oxide, and zirconia, and wherein said aluminum brazing element comprises 99% by weight or greater aluminum;
placing the components of said joining pre-assembly into a process chamber;
removing oxygen from said process chamber;
heating at least said aluminum brazing element of said joining pre-assembly to a first joining temperature of between 770 C and 1200 C, thereby joining said upper plate layer to said lower plate layer with a hermetically sealed aluminum joint which hermetically seals said inner space from an area outside of said brazing layer across said joint, and wherein said aluminum has not diffused into said upper plate layer, and wherein the thickness of said final joint is greater than zero.
9. The method of claim 8 wherein the step of removing oxygen from said process chamber comprises applying a pressure of lower than 1×10E-4 Torr to said process chamber.
10. The method of claim 8 wherein the step of removing oxygen from said process chamber comprises applying a pressure of lower than 1×10E-5 Torr to said process chamber.
11. The method of claim 8 wherein the step of removing oxygen from said process chamber comprises purging and re-filling the chamber with pure, dehydrated inert gas.
12. The method of claim 8 wherein the step of removing oxygen from said process chamber comprises purging and re-filling the chamber with purified hydrogen.
13. The method of claim 8 wherein said step of heating said joining pre-assembly to a first joining temperature comprises heating said joining pre-assembly for a duration of between 10 minutes and 2 hours.
14. The method of claim 8 wherein said step of heating said joining pre-assembly to a first joining temperature comprises heating said joining pre-assembly for a duration of between 30 minutes and 1 hour.