Semiconductor device using EMC wafer support system and fabricating method thereof
Provided are a semiconductor device using, for example, an epoxy molding compound (EMC) wafer support system and a fabricating method thereof, which can, for example, adjust a thickness of the overall package in a final stage of completing the device while shortening a fabricating process and considerably reducing the fabrication cost. An example semiconductor device may comprise a first semiconductor die that comprises a bond pad and a through silicon via (TSV) connected to the bond pad; an interposer comprising a redistribution layer connected to the bond pad or the TSV and formed on the first semiconductor die, a second semiconductor die connected to the redistribution layer of the interposer and positioned on the interposer; an encapsulation unit encapsulating the second semiconductor die, and a solder ball connected to the bond pad or the TSV of the first semiconductor die.
1. A method of manufacturing a semiconductor device comprising a lower semiconductor die and an upper semiconductor die electrically coupled to the lower semiconductor die, the method comprising:
forming a wafer support structure, wherein the wafer support structure comprises a top surface that is coupled to a bottom surface of the lower semiconductor die;
after said forming the support structure, electrically coupling the upper semiconductor die to the lower semiconductor die;
after said coupling the upper semiconductor die to the lower semiconductor die and prior to singulating the lower semiconductor die from a semiconductor wafer, forming an encapsulation layer above the upper semiconductor die, above the lower semiconductor die, and laterally surrounding the upper semiconductor die;
after said forming the encapsulation layer above the upper semiconductor die, removing the entire support structure; and
forming an interposer by, at least in part, sequentially layering a plurality of dielectric layers and a plurality of conductive layers on the lower semiconductor die, wherein:
the plurality of conductive layers comprises a first conductive layer, and a second conductive layer
the plurality of dielectric layers comprises a first dielectric layer, a second dielectric layer, and a third dielectric layer;
the first dielectric layer and the second dielectric layer laterally surround the first conductive layer;
the second conductive layer comprises a land for coupling to the second semiconductor die;
the third dielectric layer laterally surrounds the land and covers at least a portion of a bottom side of the land; and
said electrically coupling the upper semiconductor die to the lower semiconductor die comprises electrically coupling the upper semiconductor die to the interposer.
2. The method of claim 1 , comprising
forming at least one intervening layer between the lower semiconductor die and the support structure; and
removing the at least one intervening layer after said removing the entire support structure.
3. The method of claim 2 , wherein the at least one intervening layer comprises a metal layer.
4. The method of claim 1 , wherein the wafer support structure comprises a molded structure.
5. The method of claim 1 , wherein a lateral surface of the lower semiconductor die, a lateral surface of the interposer, and a lateral surface of the encapsulation layer are coplanar.
6. The method of claim 1 , wherein when the semiconductor device is completed, a top side of the upper semiconductor die is entirely covered by the encapsulation layer.
7. The method of claim 1 , comprising after said removing the entire support structure, forming a package interconnection structure below the lower semiconductor die, wherein said forming a package interconnection structure comprises:
sequentially layering at least one lower-side conductive layer and at least one lower-side dielectric layer on a lower side of the lower semiconductor die; and
forming a conductive ball on the at least one lower-side conductive layer,
wherein the at least one lower-side dielectric layer laterally surrounds a portion of the conductive ball.
8. The method of claim 1 , wherein said coupling the upper semiconductor die to the lower semiconductor die comprises coupling the upper semiconductor die to the lower semiconductor die when the lower semiconductor die has a thickness greater than 400 microns and comprises a through silicon via (TSV) having a length no greater than 70 microns.
9. A method of manufacturing a semiconductor device, the method comprising:
forming a structure comprising:
a first semiconductor die comprising: a bond pad on a top side of the first semiconductor die, and a through silicon via (TSV) extending from the bond pad toward a bottom side of the first semiconductor die; and
a support structure, wherein the support structure comprises a top side coupled to the bottom side of the first semiconductor die;
forming an interposer on the top side of the first semiconductor die, said forming an interposer comprising sequentially layering at least one conductive layer and at least one dielectric layer on the top side of the first semiconductor die, wherein the at least one conductive layer is electrically connected to the bond pad;
connecting a second semiconductor die to the at least one conductive layer of the interposer;
forming an encapsulation layer around the second semiconductor die;
exposing the TSV, said exposing the TSV comprising removing the support structure; and
forming a lower interconnection structure on the exposed TSV.
10. The method of claim 9 , wherein said forming a lower interconnection structure on the exposed TSV comprises:
sequentially layering at least one lower-side conductive layer and at least one lower-side dielectric layer on the bottom side of the first semiconductor die, where the at least one lower-side conductive layer is electrically coupled to the exposed TSV; and
forming a conductive ball on the at least one lower-side conductive layer.
11. The method of claim 10 , wherein the at least one lower-side dielectric layer laterally surrounds a portion of the conductive ball.
12. The method of claim 9 , wherein when the semiconductor device is completed, a top side of the second semiconductor die is entirely covered by the encapsulation layer.
13. The method of claim 9 , wherein said exposing the TSV comprises, after said removing the support structure, removing material from the bottom side of the first semiconductor die.
14. The method of claim 9 , wherein a lateral surface of the first semiconductor die, a lateral surface of the interposer, and a lateral surface of the encapsulation layer are coplanar.
15. The method of claim 9 , wherein said forming the interposer comprises forming the interposer when the first semiconductor die has a thickness greater than 400 microns and when the TSV has a length no greater than 70 microns.
16. A semiconductor device comprising:
a first semiconductor die comprising: a bond pad on a top side of the first semiconductor die, and a through silicon via (TSV) extending from the bond pad completely to a bottom side of the first semiconductor die;
an interposer on the top side of the first semiconductor die, the interposer comprising at least one conductive layer and at least one dielectric layer, wherein the at least one conductive layer is electrically connected to the bond pad;
a second semiconductor die coupled to the interposer and electrically connected to the at least one conductive layer of the interposer;
an encapsulation layer around the second semiconductor die and on the top side of the first semiconductor die, wherein a top side of the second semiconductor die is entirely covered by the encapsulation layer; and
a lower interconnection structure on the TSV at the bottom side of the first semiconductor die,
wherein:
the at least one conductive layer of the interposer comprises a first conductive layer, and a second conductive layer;
the at least one dielectric layer of the interposer comprises a first dielectric layer, a second dielectric layer, and a third dielectric layer;
the first dielectric layer and the second dielectric layer laterally surround the first conductive layer;
the second conductive layer comprises a land for coupling to the second semiconductor die; and
the third dielectric layer laterally surrounds the land and covers at least a portion of a bottom side of the land.
17. The semiconductor device of claim 16 , wherein the encapsulation layer laterally surrounds the second semiconductor die, and the encapsulation layer does not laterally surround the first semiconductor die.
18. The semiconductor device of claim 16 , wherein the encapsulation layer underfills between the second semiconductor die and the interposer, but does not underfill between the first semiconductor die and the interposer.
19. The semiconductor device of claim 16 , wherein a lateral side of the first semiconductor die, a lateral side of the interposer, and a lateral side of the encapsulation layer are coplanar.
20. The semiconductor device of claim 16 , wherein the lower interconnection structure comprises:
a signal distribution structure comprising a lower conductive layer and a lower dielectric layer sequentially layered on the bottom side of the first semiconductor die, where the lower conductive layer is electrically coupled to the TSV; and
a conductive ball coupled to the lower conductive layer, wherein a portion of the conductive ball is laterally surrounded by the lower dielectric layer.