Light emitting diode device having III-nitride nanowires, a shell layer and a continuous layer
A light emitting diode (LED) includes a plurality of Group III-nitride nanowires extending from a substrate, at least one Group III-nitride pyramidal shell layer located on each of the plurality of Group III-nitride nanowires, a continuous Group III-nitride pyramidal layer located over the at least one Group III-nitride pyramidal shell layer, and a continuous pyramidal contact layer located over the continuous Group III-nitride pyramidal layer. The at least one Group III-nitride pyramidal shell layer is located in an active region of the LED. The plurality of Group III-nitride nanowires are doped one of n- or p-type. The continuous Group III-nitride pyramidal layer is doped another one of p- or n-type to form a junction with the plurality of Group III-nitride nanowires. A distance from a side portion of the continuous contact layer to the plurality of Group III-nitride nanowires is shorter than a distance of an apex of the continuous contact layer to the plurality of Group III-nitride nanowires.
1. A light emitting diode (LED), comprising:
a plurality of Group III-nitride nanowires extending from a substrate;
at least one Group III-nitride pyramidal shell layer located on each of the plurality of Group III-nitride nanowires;
a continuous Group III-nitride pyramidal layer located over the at least one Group III-nitride pyramidal shell layer; and
a continuous pyramidal contact layer located over the continuous Group III-nitride pyramidal layer, wherein:
the at least one Group III-nitride pyramidal shell layer is located in an active region of the LED;
the plurality of Group III-nitride nanowires are doped one of n- or p-type;
the continuous Group III-nitride pyramidal layer is doped another one of p- or n-type to form a junction with the plurality of Group III-nitride nanowires; and
a distance from a side portion of the continuous pyramidal contact layer to the plurality of Group III-nitride nanowires is shorter than a distance of an apex of the continuous pyramidal contact layer to the plurality of Group III-nitride nanowires.
2. The LED of claim 1 , wherein the plurality of Group III-nitride nanowires are grown by a chemical vapor deposition (CVD) based selective growth area technique.
3. The LED of claim 2 , wherein the plurality of Group III-nitride nanowires extend from the substrate through openings in a growth mask layer located over the substrate.
4. The LED of claim 1 , wherein the plurality of Group III-nitride nanowires comprise a plurality of substantially defect free Group III-nitride nanowires and wherein at least 90% of the plurality of Group III-nitride nanowires have the same crystal structure through their respective entire length.
5. The LED of claim 4 , wherein the plurality of Group III-nitride nanowires comprise GaN nanowires.
6. The LED of claim 5 , wherein the at least one Group III-nitride pyramidal shell layer comprises an InGaN shell layer.
7. A light emitting diode (LED), comprising:
a plurality of Group III-nitride nanowires extending from a substrate;
at least one Group III-nitride pyramidal shell layer located on each of the plurality of Group III-nitride nanowires;
a continuous Group III-nitride pyramidal layer located over the at least one Group III-nitride pyramidal shell layer; and
a continuous pyramidal contact layer located over the continuous Group III-nitride pyramidal layer, wherein:
the at least one Group III-nitride pyramidal shell layer is located in an active region of the LED;
the plurality of Group III-nitride nanowires are doped one of n- or p-type;
the continuous Group III-nitride pyramidal layer is doped another one of p- or n-type to form a junction with the plurality of Group III-nitride nanowires; and
the continuous pyramidal contact layer has only slanted sidewalls that meet at an apex.
8. The LED of claim 7 , wherein the plurality of Group III-nitride nanowires are grown by a chemical vapor deposition (CVD) based selective growth area technique.
9. The LED of claim 8 , wherein the plurality of Group III-nitride nanowires extend from the substrate through openings in a growth mask layer located over the substrate.
10. The LED of claim 7 , wherein the plurality of Group III-nitride nanowires comprise a plurality of substantially defect free Group III-nitride nanowires and wherein at least 90% of the plurality of Group III-nitride nanowires have the same crystal structure through their respective entire length.
11. The LED of claim 10 , wherein the plurality of Group III-nitride nanowires comprise GaN nanowires.
12. The LED of claim 11 , wherein the at least one Group III-nitride pyramidal shell layer comprises an InGaN shell layer.
13. The LED of claim 7 , wherein a distance from a side portion of the continuous pyramidal contact layer to the plurality of Group III-nitride nanowires is shorter than a distance of the apex of the continuous pyramidal contact layer to the plurality of Group III-nitride nanowires.