Field effect device with reduced capacitance and resistance in source/drain contacts at reduced gate pitch
View Patent ↗A method of forming source/drain contacts with reduced capacitance and resistance, including, forming a source/drain and a channel region on an active region of a substrate, forming a dielectric fill on the source/drain, forming a trench in the dielectric fill, forming a source/drain contact in the trench, forming an inner contact mask section on a portion of an exposed top surface of the source/drain contact, removing a portion of the source/drain contact to form a channel between a sidewall of the dielectric fill and a remaining portion of the source/drain contact, where a surface area of the remaining portion of the source/drain contact is greater than the surface area of the exposed top surface of the source/drain contact, and forming a source/drain electrode fill on the remaining portion of the source/drain contact.
1. A method of forming source/drain contacts with reduced capacitance and resistance, comprising:
forming a source/drain and a channel region on an active region of a substrate;
forming a dielectric fill on the source/drain;
forming a trench in the dielectric fill;
forming a source/drain contact in the trench;
forming an inner contact mask section on a portion of an exposed top surface of the source/drain contact;
removing a portion of the source/drain contact to form a channel between a sidewall of the dielectric fill and a remaining portion of the source/drain contact, where a surface area including sidewalls of the remaining portion of the source/drain contact is greater than the surface area of the exposed top surface of the source/drain contact;
forming a source/drain electrode fill on the remaining portion of the source/drain contact; and
forming an ILD fill within a lower portion of the channel.
2. The method of claim 1 , wherein the inner contact mask section is formed by forming a contact mask layer on the top surface of the source/drain contact, and performing a low temperature anneal to cause phase separation of the contact mask layer.
3. The method of claim 2 , wherein the inner contact mask section is a directed self-assembly (DSA) copolymer.
4. The method of claim 3 , wherein the DSA copolymer is a block copolymer of 50% polystyrene (PS) and 50% poly methyl methacrylate (PMMA).
5. The method of claim 1 , wherein the ILD fill and the dielectric fill are silicon oxide (SiO), a low-k dielectric, a flowable polymeric material, or a combination thereof.
6. The method of claim 5 , wherein the ILD fill and the dielectric fill are the same material.
7. The method of claim 1 , wherein the source/drain contact is tungsten (W), cobalt (Co), and suitable combinations thereof.
8. The method of claim 7 , wherein the source/drain electrode fill is tungsten (W), cobalt (Co), and suitable combinations thereof.