Polymer substrate for flexible electronics microfabrication and methods of use
Provided are flexible electronics stacks and methods of use. An example flexible electronics stack includes a flexible polymeric substrate film and a rigid inorganic electronic component. The flexible polymeric substrate film includes a thermoset polymer prepared by curing a monomer solution; wherein the monomer solution comprises about 25 wt % to about 65 wt % of one or more thiol monomers and from about 25 wt % to about 65 wt % of one or more co-monomers.
1. A method of making a flexible polymeric substrate film comprising: providing a monomer solution comprising about 25 wt % to about 65 wt % of one or more thiol monomers and from about 25 wt % to about 65 wt % of one or more co-monomers; depositing the monomer solution on a carrier; curing the monomer solution to provide the flexible polymeric substrate film on the carrier; depositing an interfacial adhesion layer atop the flexible polymeric substrate film; and coupling a rigid inorganic electronic component to the flexible polymeric substrate film by attaching the rigid inorganic electronic component to the interfacial adhesion layer.
2. The method of claim 1 , wherein the monomer solution comprises a solvent fraction less than 50% by weight.
3. The method according to claim 1 , wherein the flexible polymeric substrate film is formed into its final shape using at least one of the following apparatuses: an oven; a slot die coater; a rod coater; a blade coater; a spin coater; or a reaction injection mold.
4. The method according to claim 1 , wherein the monomer solution is off-stoichiometrically balanced with at least 5% excess mols of the thiol monomers.
5. The method according to claim 1 , wherein the monomer solution is off-stoichiometrically balanced with at least 5% excess mols of the comonomers.
6. The method according to claim 1 , wherein the flexible polymeric substrate film may be peeled off of the carrier.
7. The method according to claim 1 , wherein the interfacial adhesion layer is deposited through electron beam evaporation, molecular beam epitaxy, reactive ion sputtering, pulsed laser deposition, atomic layer deposition, chemical vapor deposition, electroplating, or spin coating.
8. The method according to claim 1 , wherein the interfacial adhesion layer comprises a metal selected from the group consisting of Lithium, Sodium, Potassium, Beryllium, Magnesium, Calcium, Titanium, Vanadium, Chromium, Manganese, Copper, Zinc, Yttrium, Zirconium, Niobium, Molybdenum, Ruthenium, Palladium, Silver, Iridium, Platinum, Gold, Mercury, Aluminum, Gallium, Indium, Tin, Thallium, Lead, Bismuth, and any combination thereof.
9. The method according to claim 1 , wherein the interfacial adhesion layer comprises an element selected from the group consisting of Boron, Silicon, Germanium, Arsenic, Antimony, Tellurium, Polonium, and any combination thereof.
10. The method according to claim 1 , wherein the interfacial adhesion layer comprises titanium oxide, vanadium oxide, copper oxide, indium tin oxide, tungsten sulfide, ferric sulfide, molybdenum disulfide, silicon sulfide, gallium selenide, indium selenide, cadmium selenide, cadmium telluride, bismuth telluride, lead telluride, or a combination thereof.
11. The method according to claim 1 , wherein the rigid inorganic electronic component is selected from the group consisting of an application-specific integrated circuit (ASIC), a system-on-chip (SOC), a central processing unit, a graphical processing unit, a microcontroller, a wireless transceiver, a field-programmable gate array (FPGA), a digital signal processor (DSP), an analog-to-digital converter (ADC), a display row or column driver for active matrix backplanes, an amplifier, a photosensor, a pressure sensor, a temperature sensor, a surface-mount resistor, capacitor, inductor, or a combination thereof.
12. The method according to claim 1 , wherein the rigid inorganic electronic component is attached to the interfacial adhesion layer using isotropically conductive adhesives, anisotropically conductive adhesives, non-conductive adhesives, or direct metal alloying.
13. The method according to claim 1 , wherein the rigid inorganic electronic component is attached to the interfacial adhesion layer using Sn solder reflow, Sn, Cu (1−x) solder reflow, Sn Ag (1−x) solder reflow, Sn Sb (1−x) solder reflow, In Sn (1−x) solder reflow, Bi Sn (1−x) solder reflow, or a combination thereof.