Semiconductor device with bond pad wiring lead-out arrangement avoiding bond pad probe mark area
Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.
1. A semiconductor device, comprising:
a semiconductor chip including a main surface, and a pad formed over the main surface;
a first insulating layer formed over the main surface of the semiconductor chip;
a wiring formed over the first insulating layer, and connected with the pad; and
a bump electrode formed on a part of the wiring, and electrically connected with pad via the wiring,
wherein, in plan view, the pad is located closer than the bump electrode to an edge of the semiconductor chip, with the bump electrode being arranged in a central portion of the semiconductor chip,
wherein a probe mark is formed in a first area of a surface of the pad,
wherein the first insulating layer has a first opening,
wherein a second area of the surface of the pad is exposed from the first insulating layer in the first opening,
wherein, in plan view, the first area is located closer than the second area to the central portion of the semiconductor chip,
wherein the wiring is connected with the pad in the second area, but not in the first area, and
wherein, in plan view, the wiring is led from the second area to the central portion of the semiconductor chip such that the wiring does not overlap with the probe mark.
2. The semiconductor device according to claim 1 ,
wherein the first area of the surface of the pad is covered with the first insulating layer.
3. The semiconductor device according to claim 1 ,
wherein a second insulating layer is formed on the main surface,
wherein the second insulating layer has a second opening,
wherein the surface of the pad is exposed from the second insulating layer in the second opening, and
wherein the first insulating layer is formed on the second insulating layer.
4. The semiconductor device according to claim 1 ,
wherein a third insulating layer is formed on the first insulating layer,
wherein the third insulating layer has a third opening,
wherein the part of the wiring is exposed from the third insulating layer in the third opening.
5. The semiconductor device according to claim 4 ,
wherein a portion of the bump electrode is located inside the third opening of the third insulating layer.
6. The semiconductor device according to claim 1 ,
wherein the wiring is connected with the pad via a seed layer.
7. The semiconductor device according to claim 6 ,
wherein the seed layer is extended to a surface of the first insulating layer,
wherein the seed layer is connected with the pad in the second area, but not in the first area, and
wherein the wiring is formed on the first insulating layer via the seed layer.
8. The semiconductor device according to claim 1 ,
wherein a flatness of the surface of the pad in the first area is less than a flatness of the surface of the pad in the second area.
9. A semiconductor device, comprising:
a semiconductor chip including a main surface, and a pad formed over the main surface;
a first insulating layer formed over the main surface of the semiconductor chip;
a wiring formed over the first insulating layer, and connected with the pad; and
a bump electrode formed on a part of the wiring, and electrically connected with pad via the wiring,
wherein, in plan view, the pad is located closer than the bump electrode to an edge of the semiconductor chip, with the bump electrode being arranged in a central portion of the semiconductor chip,
wherein a probe mark is formed in a first area of a surface of the pad,
wherein the first insulating layer has a first opening,
wherein a second area of the surface of the pad is exposed from the first insulating layer in the first opening,
wherein, in plan view, the first area is located closer than the second area to the central portion of the semiconductor chip,
wherein the wiring is connected with the pad in the second area, but not in the first area, and
wherein, in plan view, the wiring is led from the second area in a direction away from the first area.
10. The semiconductor device according to claim 9 ,
wherein the first area of the surface of the pad is covered with the first insulating layer.
11. The semiconductor device according to claim 9 ,
wherein a second insulating layer is formed on the main surface,
wherein the second insulating layer has a second opening,
wherein the surface of the pad is exposed from the second insulating layer in the second opening, and
wherein the first insulating layer is formed on the second insulating layer.
12. The semiconductor device according to claim 9 ,
wherein a third insulating layer is formed on the first insulating layer,
wherein the third insulating layer has a third opening,
wherein the part of the wiring is exposed from the third insulating layer in the third opening.
13. The semiconductor device according to claim 12 ,
wherein a portion of the bump electrode is located inside the third opening of the third insulating layer.
14. The semiconductor device according to claim 9 ,
wherein the wiring is connected with the pad via a seed layer.
15. The semiconductor device according to claim 14 ,
wherein the seed layer is extended to a surface of the first insulating layer,
wherein the seed layer is connected with the pad in the second area, but not in the first area, and
wherein the wiring is formed on the first insulating layer via the seed layer.
16. The semiconductor device according to claim 9 ,
wherein a flatness of the surface of the pad in the first area is less than a flatness of the surface of the pad in the second area.