Methods of forming vertical field-effect transistor with selfaligned contacts for memory devices with planar periphery/array and intermediate structures formed thereby
Methods of forming a memory device having an array portion including a plurality of array transistors and a periphery region including peripheral circuit transistor structures of the memory device, where an upper surface of the periphery region and an upper surface of the array portion are planar (or nearly planar) after formation of the peripheral circuit transistor structures and a plurality of memory cells (formed over the array transistors). The method includes forming the peripheral circuit transistor structures in the periphery region, forming the plurality of array transistors in the array portion and forming a plurality of memory cells over respective vertical transistors. Structures formed by the method have planar upper surfaces of the periphery and array regions.
1. A memory device, comprising:
a substrate including a first region and a second region;
a plurality of peripheral circuit transistors formed on the substrate in the first region;
a plurality of array transistors formed on the substrate in the second region, each of the plurality of array transistors having a pillar and a self-aligned contact that extends to a first width within a volume that is self-aligned with the pillar;
a plurality of confined phase change memory cells, each of the plurality of confined phase change memory cells comprising a phase change material that extends to a second width less than the first width confined within the volume that is self-aligned with the pillar and in direct contact with the self-aligned contact of a respective one of the plurality of array transistors, the volume comprising the first width, a length, and a height that extends from a bottom surface of the plurality of array transistors to an upper surface of the phase change material; and
a dielectric portion over at least the first region, the dielectric portion including an upper surface that is coplanar with the upper surface of the phase change material.
2. The memory device of claim 1 , wherein the first region comprises a periphery region, and wherein the second region comprises an array region.
3. The memory device of claim 1 , wherein the plurality of confined phase change memory cells are formed in direct contact with a silicide of the self-aligned contact of the respective one of the plurality of array transistors.
4. The memory device of claim 1 , wherein at least one of the plurality of peripheral circuit transistors is formed on the substrate between shallow trench isolation regions of the substrate in the first region.
5. The memory device of claim 1 , further comprising:
a common doped portion forming a source portion of at least a subset of the plurality of array transistors.
6. The memory device of claim 1 , wherein the plurality of array transistors are associated with gates that are below a top surface of the respective pillar.
7. A memory device, comprising:
a plurality of peripheral circuit transistors formed on a substrate in a first region;
a plurality of array transistors formed on the substrate in a second region, each of the plurality of array transistors having a self-aligned contact, wherein at least one of the plurality of array transistors is a vertical transistor comprising a pillar and a gate portion, and wherein the self-aligned contact of the at least one of the plurality of array transistors extends to a first width within a volume that is self-aligned with the pillar;
a plurality of confined phase change memory cells, each of the plurality of confined phase change memory cells comprising a phase change material that extends to a second width less than the first width confined within the volume that is self-aligned with the pillar of the respective one of the plurality of array transistors and in direct contact with the self-aligned contact of a respective one of the plurality of array transistors, the volume comprising the first width, a length, and a height that extends from a bottom surface of the plurality of array transistors to an upper surface of the phase change material; and
a dielectric portion over at least the first region, the dielectric portion including an upper surface that is coplanar with the upper surface of the phase change material.
8. The memory device of claim 7 , wherein the self-aligned contact of the at least one of the plurality of array transistors is formed in a recess of the pillar of the respective array transistor.
9. The memory device of claim 7 , wherein the pillar of the at least one of the plurality of array transistors has a cross section, parallel to the substrate, that is rectangular.
10. The memory device of claim 7 , wherein the pillar of the at least one of the plurality of array transistors comprises a silicon portion formed on the substrate in the second region.
11. The memory device of claim 10 , wherein the silicon portion is formed on a doped portion of the substrate in the second region.
12. The memory device of claim 7 , wherein a material of the gate portion of a first of the plurality of array transistors is contiguous with a material of the gate portion of a second of the plurality of array transistors.
13. The memory device of claim 7 , wherein the plurality of confined phase change memory cells are formed in direct contact with a silicide of the self-aligned contact of the respective one of the plurality of array transistors.
14. The memory device of claim 7 , wherein, for the at least one of the plurality of array transistors, a material of the gate portion is below a surface of the pillars that is opposite from the substrate.
15. A memory device, comprising:
a peripheral circuit transistor formed on a substrate in a first region;
an array transistor formed on the substrate in a second region, the array transistor having a self-aligned contact that extends to a first width within a volume that is self-aligned with a pillar of the array transistor;
a confined phase change memory cell comprising a phase change material that extends to a second width less than the first width confined within the volume and in direct contact with the self-aligned contact of the array transistor, the volume comprising the first width, a length, and a height that extends from a bottom surface of the array transistor to an upper surface of the phase change material; and
a dielectric portion over at least the first region, the dielectric portion including an upper surface that is coplanar with the upper surface of the phase change material.
16. The memory device of claim 15 , wherein the confined phase change memory cell is formed in direct contact with a silicide of the self-aligned contact of the array transistor.
17. The memory device of claim 15 , wherein the array transistor is formed on a doped portion of the substrate in the second region.