IP Library Granted Patent US 11,572,617
Granted Patent B2
US 11,572,617 · App. 15/498,383 · Granted Feb 7, 2023

Protective metal oxy-fluoride coatings

Inventors: David Fenwick (Los Altos, CA); Chengtsin Lee (Union City, CA); Jennifer Y. Sun (Mountain View, CA); Yikai Chen (Santa Clara, CA)
Assignee: Applied Materials, Inc.
C23C14/0694C23C14/0021C23C14/08C23C14/081C23C14/082C23C14/083C23C14/46C23C16/4404H01J37/32477H01J37/32495H01J37/32559H01J37/3441C23C14/30
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Quick Facts
Patent No.
US 11,572,617
App. No.
15/498,383
Granted
Feb 7, 2023
Kind
B2
Abstract

An article comprises a body having a protective coating. The protective coating is a thin film that comprises a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of M x O y F z , where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

Claims (27)

1. A method of coating a chamber component for a plasma processing chamber, comprising:

providing a metal oxide source material consisting of a metal oxide having an empirical formula of M x_source O y_source , wherein M x_source is a metal or a mixture of a plurality of metals selected from a group consisting of gadolinium, aluminum, cerium, dysprosium, zirconium, calcium, erbium, lanthanum, neodymium, ytterbium and strontium, and wherein y_source has a value of 0.1 to 2 times a value of x; and

performing sputter deposition of the metal oxide source material to form a metal oxy-fluoride coating on the chamber component, wherein the chamber component is selected from a group consisting of a substrate support assembly, an electrostatic chuck, a ring, a chamber wall, a base, a gas distribution plate, a showerhead, a liner, a liner kit, a shield, a plasma screen, a flow equalizer, a cooling base, a chamber viewport, a chamber lid, a face plate and a selectivity modulation device, and wherein the chamber component comprises a material selected from a group consisting of a Al 2 O 3 , Y 2 O 3 , yttrium aluminum garnet, Y 4 Al 2 O 9 , a solid-solution of Y 2 O 3 —ZrO 2 , SiC, AlN, TiO, TiN and AlF, and wherein the chamber component does not comprise SiO 2 and a polymer;

wherein performing the sputter deposition comprises introducing at least one of fluorine ions or fluorine radicals to the sputtered metal oxide source material during the sputter deposition;

wherein the metal oxy-fluoride coating formed on the chamber component has an empirical formula of M x_coating O y_coating F z_coating , wherein M x_coating is the metal or the mixture of the plurality of metals selected from the group consisting of gadolinium, aluminum, cerium, dysprosium, zirconium, calcium, erbium, lanthanum, neodymium, ytterbium and strontium;

wherein y_coating has a value of 0.1 to 1.9 times the value of x and z_coating has a value of 0.1 to 3.9 times the value of x;

wherein one of:

a) M x_coating has a valence of 2 and the metal oxy-fluoride coating comprises 37-48 at. % of the metal or the mixture of the plurality of metals, 10-43 at. % oxygen, and 10-53 at. % fluorine;

b) M x_coating has a valence of 3 and the metal oxy-fluoride coating comprises about 27-38 at. % of the metal, about 10-52 at. % oxygen, and about 10-63 at. % fluorine; or

c) M x_coating has a valence of 4 and the metal oxy-fluoride coating comprises about 22-32 at. % of the metal, about 10-58 at. % oxygen, and about 10-68 at. % fluorine; and

wherein the metal oxy-fluoride coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

2. The method of claim 1 , further comprising heating the chamber component to 15 to 150 degrees Celsius.

3. The method of claim 1 , wherein the sputter deposition is performed in a chamber having a pressure of 0.1 to 100 mTorr.

4. The method of claim 1 , wherein the chamber component consists essentially of a material selected from a group consisting of Al 2 O 3 , Y 2 O 3 , yttrium aluminum garnet, Y 4 Al 2 O 9 , a solid-solution of Y 2 O 3 —ZrO 2 , SiC, AlN, TiO, TiN and AlF.

5. The method of claim 1 , wherein the chamber component consists of Al 2 O 3 , Y 2 O 3 , yttrium aluminum garnet, Y 4 Al 2 O 9 , a solid-solution of Y 2 O 3 —ZrO 2 , SiC, AlN, TiO, TiN or AlF.

6. The method of claim 1 , wherein M x_coating has the valence of 2 and the metal oxy-fluoride coating comprises approximately 40-45 at. % of the metal or the mixture of the plurality of metals, approximately 20-35 at. % oxygen, and approximately 20-40 at. % fluorine.

7. The method of claim 1 , wherein M x_coating has the valence of 4 and the metal oxy-fluoride coating comprises approximately 26-28 at. % of the metal or the mixture of the plurality of metals, approximately 30-42 at. % oxygen, and approximately 30-44 at. % fluorine.

8. The method of claim 1 , wherein y_coating has a value of 0.1 times the value of x.

9. The method of claim 1 , wherein y_coating has a value of 1.4 to 1.9 times the value of x.

10. The method of claim 1 , wherein M x_coating has the valence of 3 and the metal oxy-fluoride coating comprises approximately 32-34 at. % of the metal or the mixture of the plurality of metals, approximately 30-36 at. % oxygen, and approximately 30-38 at. % fluorine.

11. The method of claim 1 , wherein M x_coating comprises at least two metals selected from the group consisting of gadolinium, aluminum, cerium, dysprosium, zirconium, calcium, erbium, lanthanum, neodymium, ytterbium and strontium.

12. The method of claim 1 , wherein M x_coating has the valence of 3.

13. The method of claim 1 , wherein z_coating has a value of 0.1 to 0.2 times the value of x.

14. The method of claim 1 , wherein z_coating has a value of 2.8 to 3.9 times the value of x.

15. The method of claim 1 , wherein y_coating has a value of 0.1 times the value of x or 1.4 to 1.9 times a value of x and z_coating has a value of 0.1 to 0.2 times the value of x or 2.8 to 3.9 times the value of x.

16. The method of claim 1 , wherein M x_coating has the valence of 2.

17. The method of claim 1 , wherein M x_coating has the valence of 4.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 1, 2017
From: FENWICK, DAVID; LEE, CHENGTSIN; SUN, JENNIFER Y.; CHEN, YIKAI
To: APPLIED MATERIALS, INC.
Reel/Frame 042563/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2017
From: FENWICK, DAVID; LEE, CHENGTSIN; SUN, JENNIFER Y.; CHEN, YIKAI
To: APPLIED MATERIALS, INC.
Reel/Frame 042162/0173 →
Continuity (2)
Provisional Application 62331326 · May 3, 2016
Related Publication 20170323772A1 · Nov 9, 2017
Cited By (1)
US 12,362,160