Method for forming layer
A method for forming a layer includes following operations. A workpiece is received in an apparatus for deposition. The apparatus for deposition includes a chamber, a pedestal disposed in the chamber to accommodate the workpiece, and a ring disposed on the pedestal. The ring includes a ring body having a first top surface and a second top surface and a barrier structure disposed between the first top surface and the second top surface. A vertical distance is defined by a top surface of the barrier structure and a top surface of the workpiece. The vertical distance is between approximately 0 mm and approximately 50 mm. A target disposed in the apparatus for deposition is sputtered. A sputtered material is deposited onto a top surface of the workpiece to form a layer. The barrier structure alters an electrical density distribution during the depositing the sputter material.
1. A method for forming a layer, comprising:
receiving a substrate over a pedestal and a ring, wherein the ring comprises:
a ring body having a first top surface and a second top surface, wherein the first top surface is in contact with the substrate; and
a barrier structure disposed between the first top surface and the second top surface, wherein the barrier structure comprises at least a first portion and a second portion, the first portion and the second portion are separated from each other by a groove, the first portion is between the substrate and the second portion, and a top surface of the second portion is higher than a top surface of the first portion, wherein a horizontal distance is defined by an edge of the substrate and the barrier structure, the horizontal distance being between approximately 0.01 mm and approximately 10 mm;
sputtering a target for deposition; and
depositing a sputtered material onto a top surface of the substrate to form the layer, wherein the barrier structure alters an electrical density distribution during the depositing the sputtered material,
wherein the ring body and the barrier structure include a conductive material different from a material of the target, and
wherein the ring further comprises an insulating film disposed over the first portion and the second portion of the barrier structure, and the first top surface and the groove are free of the insulating film, wherein a material of the insulating film is different than a material of the layer.
2. The method of claim 1 , wherein a first vertical distance is defined between the top surface of the first portion and the top surface of the second portion, and a second vertical distance is defined between the first top surface and the top surface of the first portion of the barrier structure.
3. The method of claim 2 , wherein the first vertical distance and the second vertical distance are the same.
4. The method of claim 2 , wherein the first vertical distance and the second vertical distance are different.
5. The method of claim 1 , wherein the insulating film comprises a material different from the material of the target.