Apparatus for physical vapor deposition and method for forming a layer
An apparatus for PVD is provided. The apparatus includes a chamber, a pedestal disposed in the chamber to accommodate a wafer, and a ring. The ring includes a ring body having a first top surface and a second top surface, and a barrier structure disposed between the first top surface and the second top surface. The barrier structure can further include at least a first portion and a second portion separated from each other. The second vertical distance is equal to or greater than the first vertical distance.
1. A ring, comprising:
a ring body having a first top surface, a second top surface, a first bottom surface, a second bottom surface, an innermost sidewall coupled to the first top surface and the first bottom surface, an outermost sidewall coupled to the second top surface and the second bottom surface, the first bottom surface and the second bottom surface are parallel with each other, and the first bottom surface and the second bottom surface form a step height;
a barrier structure disposed between the first top surface and the second top surface; and
an insulating film over the barrier structure, wherein the first top surface and the second top surface of the ring body are free of the insulating film, and the insulating film comprises aluminum oxide or aluminum nitride,
wherein the barrier structure comprises at least a first portion and a second portion,
wherein the second portion is between the outermost sidewall and the first portion, the first portion and the second portion are separated by a first horizontal distance, a first vertical distance is defined between a top surface of the first portion and a top surface of the second portion, and the top surface of the second portion is higher than the top surface of the first portion, and
wherein the top surface of the first portion of the barrier structure, the top surface of the second portion of the barrier structure and the first top surface of the ring body are higher than the second top surface of the ring body,
wherein the insulating film over the first portion of the barrier structure entirely overlaps the first bottom surface, and
wherein the insulating film is disposed over the first portion and the second portion of the barrier structure, and a lower surface of a first groove between the first portion and the second portion of the barrier structure is free of the insulating film.
2. The ring of claim 1 , wherein the first top surface is an annular surface, the first portion of the barrier structure is an annular portion surrounding the first top surface, the second portion of the barrier structure is an annular portion surrounding the first portion, and the second top surface is an annular surface surrounding the first top surface and the barrier structure.
3. The ring of claim 1 , wherein the first top surface and the first portion of the barrier structure are separated by a second horizontal distance.
4. The ring of claim 3 , wherein the first horizontal distance and the second horizontal distance are the same.
5. The ring of claim 1 , wherein a second vertical distance is defined between the first top surface and the top surface of the first portion of the barrier structure.
6. The ring of claim 5 , wherein the first vertical distance and the second vertical distance are the same.
7. The ring of claim 1 , wherein the first vertical distance and the second vertical distance are different.
8. The ring of claim 1 , wherein the ring body and the barrier structure comprise a conductive material.
9. The ring of claim 1 , further comprising:
a second groove between the first top surface and the first portion of the barrier structure; and.
10. The ring of claim 9 , wherein the lower surface of the first groove and a lower surface of the second groove are aligned with each other.
11. The ring of claim 1 , wherein a width of the first bottom surface is greater than a width of the second bottom surface.