Plasma stability determination method and plasma processing apparatus
A method and apparatus for determining a stability of plasma in a plasma processing apparatus for performing a plasma processing by converting into plasma a processing gas supplied into a processing container. The method includes: detecting a light emission intensity of the plasma in the processing container while the plasma is generated in the processing container; generating a first function representing a relationship between time and the light emission intensity from a detection result of the light emission intensity; differentiating the first function with time to calculate a differential value, and generating a second function from a relationship between an absolute value of the differential value and time; and integrating the second function with time to calculate an integral value, and determining a stability of the plasma based on the calculated integral value. A related apparatus is also provided.
1. A method for determining stability of plasma in a plasma processing apparatus for performing a plasma processing by converting a processing gas supplied in a processing container into plasma, the method comprising:
detecting a light emission intensity of the plasma in the processing container while the plasma is generated in the processing container;
generating a first function representing a relationship between time and the light emission intensity from a detection result of the light emission intensity;
differentiating the first function with time to calculate a set of differential values;
generating a second function from a relationship between a set of absolute values of the differential values and time;
integrating the second function with time to calculate an integral value; and
determining stability of the plasma based on the calculated integral value.
2. The method of claim 1 , wherein the stability of the plasma is determined by comparing the calculated integral value with a predetermined threshold value.
3. The method of claim 2 , wherein the light emission intensity is detected for each of a plurality of wavelengths of light,
the first function and the second function are generated for each of the plurality of wavelengths of light,
the threshold value is set for each of the plurality of wavelengths of light, and
if at least one of the integral values for the plurality of wavelengths of light exceeds the threshold value, it is determined that the plasma is unstable.
4. The method of claim 1 , wherein a substrate is processed while the plasma is generated.
5. The method of claim 2 , wherein a substrate is processed while the plasma is generated.
6. The method of claim 3 , wherein a substrate is processed while the plasma is generated.
7. A plasma processing apparatus for performing a plasma processing by converting a processing gas supplied in a processing container into plasma, the apparatus comprising:
a processing gas supply unit that supplies a processing gas into the processing container;
a plasma generating unit that generates plasma of the processing gas in the processing container;
a light emission detecting mechanism that detects a light emission intensity of the plasma generated in the processing container;
a first function generating unit that generates a first function representing a relationship between time and the light emission intensity from a detection result of the light emission intensity by the light emission detecting mechanism;
a second function generating unit that differentiates the first function with time to calculate a set of differential values, and generates a second function from a relationship between a set of absolute values of the differential values and time; and
a stability determining unit that integrates the second function with time to calculate an integral value, and determines stability of the plasma based on the calculated integral value.
8. The plasma processing apparatus of claim 7 , wherein the stability determining unit determines the stability of the plasma by comparing the calculated integral value with a predetermined threshold value.
9. The plasma processing apparatus of claim 8 , wherein the light emission intensity detecting mechanism is provided for each of a plurality of wavelengths of light,
the first function generating unit and the second function generating unit generate the first function and the second function for each of the plurality of wavelengths of light, respectively, and
the stability determining unit determines that the plasma is unstable if at least one of the integral values for the plurality of wavelengths of light exceeds a threshold value that is set for each of the plurality of wavelengths of light.
10. The method of claim 7 , wherein a substrate is processed while the plasma is generated.
11. The method of claim 8 , wherein a substrate is processed while the plasma is generated.
12. The method of claim 9 , wherein a substrate is processed while the plasma is generated.