Ion implantation processes and apparatus
An ion source apparatus which generates dopant species in a manner enabling low vapor pressure dopant source materials to be employed. The ion source apparatus ( 10 ), comprising: an ion source chamber ( 12 ); and a consumable structure in or associated with the ion source chamber ( 12 ), said consumable structure comprising a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber. For example, the consumable structure is a dopant gas feed line ( 14 ) comprising a pipe or conduit having an interior layer formed of a solid dopant source material.
1. An ion source apparatus for ion implantation, comprising:
an ion source chamber; and
a consumable structure in or associated with the ion source chamber, said consumable structure comprising a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the consumable structure comprises a structural member disposed in the ion source chamber, the structural member comprising a base liner with a hole disposed of the ion source chamber.
2. The ion source apparatus of claim 1 , wherein the consumable structure comprises a gas delivery tube coupled to the ion source chamber.
3. The ion source apparatus of claim 1 , wherein the solid dopant source material comprises a dopant component selected from the group consisting of antimony, indium, and gallium.
4. The ion source apparatus of claim 1 , further comprising a source of reactive gas coupled in gas delivery relationship to the ion source chamber.
5. The ion source apparatus of claim 4 , wherein the source of reactive gas comprises gas selected from the group consisting of hydrogen fluoride, NF 3 , oxygen, hydrogen, and mixtures of two or more of the foregoing.
6. The ion source apparatus of claim 1 , wherein the solid dopant source material comprises an antimony dopant precursor.
7. The ion source apparatus of claim 1 , wherein the solid dopant source material comprises a gallium dopant precursor.
8. The ion source apparatus of claim 1 , wherein the solid dopant source material comprises an indium dopant precursor.
9. A method of conducting ion implantation, comprising:
generating ionized dopant species in an ion source chamber for said ion implantation, wherein the ion source chamber has a consumable structure in associated therewith, and wherein the consumable structure comprises a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber for ionization therein to form said ionized dopant species, said method comprising contacting the consumable structure with the reactant gas for said generating of ionized dopant species, wherein the consumable structure comprises a structural member disposed in the ion source chamber, the structural member comprising a base liner of the ion source chamber.
10. The method of claim 9 , wherein the consumable structure comprises a gas delivery tube coupled to the ion source chamber.
11. The method of claim 9 , wherein the solid dopant source material comprises a dopant component selected from the group consisting of antimony, indium, and gallium.
12. The method of claim 9 , wherein the reactive gas comprises gas selected from the group consisting of hydrogen fluoride, NF 3 , oxygen, hydrogen, and mixtures of two or more of the foregoing.
13. The method of claim 9 , wherein the solid dopant source material comprises an antimony dopant precursor.
14. The method of claim 9 , wherein the solid dopant source material comprises a gallium dopant precursor.
15. The method of claim 9 , wherein the solid dopant source material comprises an indium dopant precursor.