Ion implanter comprising integrated ventilation system

1. An ion implantation system, comprising:

an ion implanter comprising a housing defining an enclosed volume in which is positioned a gas box configured to hold one or more gas supply vessels, the gas box being in restricted gas flow communication with gas in the enclosed volume that is outside the gas box;

a first ventilation assembly configured to flow ventilation gas through the housing and to exhaust the ventilation gas from the housing to an ambient environment of the ion implanter;

a second ventilation assembly configured to exhaust gas from the gas box to a treatment apparatus that is adapted to at least partially remove contaminants from the gas box exhaust gas, or that is adapted to dilute the gas box exhaust gas, to produce a treated effluent gas, the second ventilation assembly comprising a variable flow control device for modulating flow rate of the gas box exhaust gas between a relatively lower gas box exhaust gas flow rate and a relatively higher gas box exhaust gas flow rate, and a motive fluid driver adapted to flow the gas box exhaust gas through the variable flow control device to the treatment apparatus; and

a monitoring and control assembly configured to monitor operation of the ion implanter for occurrence of a gas hazard event, and thereupon to responsively prevent gas-dispensing operation of the one or more gas supply vessels, and to modulate the variable flow control device to the relatively higher gas box exhaust gas flow rate so that the motive fluid driver flows the gas box exhaust gas to the treatment apparatus at the relatively higher gas box exhaust gas flow rate, wherein the monitoring and control assembly terminates operation of the first ventilation assembly upon a gas hazard event.

2. The ion implantation system of claim 1 , wherein the variable flow control device comprises a variable position flow damper device treatment apparatus adapted to dilute the gas box exhaust gas, to produce the treated effluent gas.

3. The ion implantation system of claim 1 , wherein the monitoring and control assembly comprises pneumatic valve actuators arranged to actuate flow control valves of the one or more gas supply vessels when present in the gas box.

4. The ion implantation system of claim 1 , wherein one or more gas supply vessels are contained in the gas box.

5. The ion implantation system of claim 1 , wherein the motive fluid driver comprises a variable frequency driver.

6. The ion implantation system of claim 1 , wherein the monitoring and control assembly comprises one or more sensors configured to sense process condition(s) within the enclosure and/or the gas box, wherein the monitoring and control assembly responsively modulates the variable flow control device based on process condition sensing of the one or more sensors.

7. The ion implantation system of claim 1 , wherein the ion implanter comprises an ion source chamber arranged to receive gas from at least one of the one or more gas supply vessels in the gas box by flow of dispensed gas through gas flow circuitry interconnecting the gas-dispensing gas supply vessel(s) with the ion source chamber.

8. The ion implantation system of claim 1 , wherein the monitoring and control assembly is configured to maintain the gas box at sub-atmospheric pressure during dispensing of gas from the one or more gas supply vessels in the gas box.

9. The ion implantation system of claim 1 , wherein the gas box includes an access structure that is openable to permit installation or change out of gas supply vessels in the gas box, and closable to configure the gas box for operation, wherein the monitoring and control assembly is configured to modulate the variable flow control device to the relatively higher gas box exhaust gas flow rate so that the motive fluid driver flows the gas box exhaust gas to the treatment apparatus at the relatively higher gas box exhaust gas flow rate, when the gas box access structure is opened.

10. The ion implantation system of claim 1 , wherein the monitoring and control assembly comprises a gas flow line that is selectively coupleable to interconnect a vacuum chamber of the ion implantation system with the second ventilation assembly for ventilating the vacuum chamber during access thereof by operating, inspection, or maintenance personnel.

11. A method of operating an ion implantation system including an ion implanter comprising a housing defining an enclosed volume in which is positioned a gas box configured to hold one or more gas supply vessels, the gas box being in restricted gas flow communication with gas in the enclosed volume that is outside the gas box, said method comprising:

flowing ventilation gas through the housing and exhausting the ventilation gas from the housing to an ambient environment of the ion implanter;

exhausting gas from the gas box and treating same to at least partially remove contaminants from the gas box exhaust gas, or to dilute the gas box exhaust gas, to produce a treated effluent gas;

monitoring operation of the ion implanter for occurrence of a gas hazard event, wherein upon occurrence of the gas hazard event, terminating said flowing of ventilation gas through the housing and exhausting of the ventilation gas from the housing to an ambient environment of the ion implanter;

during non-occurrence of a gas hazard event during said monitoring, exhausting gas from the gas box for said treating, at a relatively lower gas box exhaust flow rate; and upon occurrence of a gas hazard event during said monitoring, preventing gas-dispensing operation of the one or more gas supply vessels, and exhausting gas from the gas box for said treating, at a relatively higher gas box exhaust flow rate.

12. The method of claim 11 , wherein each of the one or more gas supply vessels has a pneumatic valve actuator operatively coupled thereto, and the pneumatic valve actuators are actuated for said preventing of gas-dispensing operation.

13. The method of claim 11 , comprising preventing gas-dispensing operation of the one or more gas supply vessels in the event that one or more process conditions deviate from predetermined process conditions, as said gas hazard event.

14. The method of claim 11 , comprising preventing gas-dispensing operation of the one or more gas supply vessels when pressure of the dispensed gas deviates from a sub-atmospheric pressure condition, as said gas hazard event.

15. The method of claim 11 , comprising preventing gas-dispensing operation of the one or more gas supply vessels, by closure of gas supply valves of the gas-dispensing gas supply vessel(s) and/or by closing gas flow control valve(s) in flow circuitry associated with the one or more gas supply vessels.

16. The method of claim 11 , wherein the gas box includes an access structure that is openable to permit installation or change out of gas supply vessels in the gas box, and closable to configure the gas box for operation, comprising exhausting gas from the gas box at the relatively higher gas box exhaust gas flow rate, when the gas box access structure is opened.

17. The method of claim 11 , wherein the ion implantation system comprises a vacuum chamber, comprising venting the vacuum chamber to ductwork for said exhausting gas from the gas box, and exhausting gas from the vacuum chamber to said treating.