IP Library › Granted Patent US 10,224,307
Granted Patent B2
US 10,224,307 · App. 15/531,243 · Granted Mar 5, 2019

Assembling method, manufacturing method, device and electronic apparatus of flip-die

Inventors: Quanbo Zou (Weifang, CN); Zhe Wang (Weifang, CN)
Assignee: GOERTEK, INC.
H01L24/97H01L21/50H01L21/6835H01L22/14H01L24/81H01L24/83H01L24/92H01L24/94H01L25/0753H01L33/62H01L24/13H01L24/16H01L24/29H01L24/32H01L2221/68318H01L2221/68327H01L2221/68354H01L2221/68381H01L2224/131H01L2224/16227H01L2224/293H01L2224/2929H01L2224/2939H01L2224/29294H01L2224/32013H01L2224/32225H01L2224/73204H01L2224/81005H01L2224/81011H01L2224/81121H01L2224/81143H01L2224/81191H01L2224/81815H01L2224/81903H01L2224/81907H01L2224/83005H01L2224/83101H01L2224/83143H01L2224/83851H01L2224/83855H01L2224/92H01L2224/9211H01L2224/92125H01L2224/94H01L2224/95001H01L2224/95144H01L2224/95145H01L2224/97H01L2924/12041H01L2933/0033H01L2933/0066
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Quick Facts
Patent No.
US 10,224,307
App. No.
15/531,243
Granted
Mar 5, 2019
Kind
B2
Abstract

The present invention discloses a assembling method, a manufacturing method, an device and an electronic apparatus of flip-die. The method for assembling a flip-die, comprises: temporarily bonding the flip-die onto a laser-transparent first substrate, wherein bumps of the flip-die are located on the side of the flip-die opposite to the first substrate; aligning the bumps with pads on a receiving substrate; irradiating the original substrate with laser from the first substrate side to lift-off the flip-die from the first substrate; and attaching the flip-die on the receiving substrate. A faster assembly rate can be achieved by using the present invention. A smaller chip size can be achieved by using the present invention. A lower profile can be achieved by using the present invention.

Claims (28)

1. A method for assembling a flip-die, comprising:

temporarily bonding the flip-die onto a laser-transparent first substrate, wherein bumps of the flip-die are located on the side of the flip-die opposite to the first substrate;

testing the flip-die on the first substrate to determine a known-good-device for lift-off;

aligning the bumps with pads on a receiving substrate;

irradiating the first substrate with laser from the first substrate side to lift-off the flip-die from the first substrate; and

attaching the flip-die on the receiving substrate for finishing the assembling.

2. The method according to claim 1 , wherein the step of aligning the bumps with pads on a receiving substrate further comprises: flipping over the first substrate.

3. The method according to claim 1 , wherein the bumps are solder bumps, and the step of attaching the flip-die on the receiving substrate further comprises:

attaching the flip-die on the receiving substrate by using flux.

4. The method according to claim 1 , wherein the step of attaching the flip-die on the receiving substrate further comprises: attaching the flip-die on the receiving substrate by means of the action of gravity.

5. The method according to claim 1 , wherein the flip-die contains magnetic substance, and the step of attaching the flip-die on the receiving substrate further comprises: attaching the flip-die on the receiving substrate by means of the action of electromagnetic force.

6. The method according to claim 1 , wherein the bumps are solder bumps, and the method further comprises:

reflowing the solder bumps to bond the flip-die with the receiving substrate; and

underfilling the bottom of the flip-die.

7. The method according to claim 1 , wherein the flip-die is temporarily bonded on the first substrate through a temporary bonding layer, and the method further comprising: removing the temporary bonding layer.

8. The method according to claim 1 , further comprising:

forming a device wafer with bumps on one side;

wherein the step of temporarily bonding the flip-die onto a laser-transparent first substrate further comprises:

temporarily bonding the device wafer onto the first substrate on the other side of the flip-die; and

singulating the device wafer into the flip-die.

9. The method according to claim 8 , wherein the step of singulating the device wafer is performed by laser scribing, mechanical blade sawing, or etching.

10. The method according to claim 1 , wherein the step of attaching the flip-die on the receiving substrate further comprises: attaching the flip-die on the receiving substrate by means of the action of electrostatic force.

11. The method according to claim 10 , wherein the electrostatic force is applied by applying voltage to the pads.

12. The method according to claim 1 , wherein the step of attaching the flip-die on the receiving substrate further comprises: attaching the flip-die on the receiving substrate through an anisotropic conductive layer;

wherein the method further comprises: processing the anisotropic conductive layer to bond the flip-die with the receiving substrate.

13. The method according to claim 12 , wherein the anisotropic conductive layer is at least one of an anisotropic conductive film, an anisotropic conductive paste and an anisotropic conductive tape.

14. A method for manufacturing a flip-die device, comprising assembling a flip-die to a receiving substrate by using the method according to claim 1 .

15. A flip-die device, which is manufactured by using the method according to claim 14 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2020
From: GOERTEK, INC.
To: WEIFANG GOERTEK MICROELECTRONICS CO., LTD.
Reel/Frame 052846/0443 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 26, 2017
From: ZOU, QUANBO; WANG, ZHE
To: GOERTEK, INC.
Reel/Frame 042517/0832 →
Continuity (1)
Related Publication 20170330856A1 · Nov 16, 2017