Micro light-emitting-diode display panel and manufacturing method thereof

1. A method for manufacturing a micro light-emitting-diode display panel, comprising:

step 1 , providing an original substrate, forming a plurality of micro light-emitting-diode semi-finished products disposed alternatively on the original substrate;

each of the plurality of micro light-emitting-diode semi-products comprising: an LED semi-conductor layer disposed on the original substrate, a first insulating layer covering the LED semi-conductor layer and the original substrate, a bottom electrode disposed on the first insulating layer and contacted with the LED semi-conductor layer, and a connection electrode disposed on the first insulating layer and contacting the original substrate;

step 2 , providing a transporting substrate, bonding a surface of the transporting substrate to the bottom electrode and the connection electrode of each of the micro emitting diode semi-finished products, peeling off the original substrate, to transfer all of the micro emitting diode semi-finished products to the transporting substrate and to expose a side surface of the LED semi-conductor layer contacted with the original substrate;

step 3 , sequentially forming a second insulating layer and a top electrode disposed on the second insulating layer on the exposed LED semi-conductor layer and the first insulating layer, to obtain a plurality of micro light-emitting-diodes with an interval arrangement; the top electrode being contacted with the LED semi-conductor layer and the connection electrode;

step 4 , providing a transfer head and a receiving substrate, the receiving substrate comprising: a base substrate, a plurality of sub-pixel regions disposed on the base substrate in an array arrangement, and a first electrode contact and a second electrode contact alternatively disposing within each of the sub-pixel regions;

step 5 , transferring the micro light-emitting-diodes on the transporting substrate onto the receiving substrate by the transfer head, each of the sub-pixel regions corresponding to the micro light-emitting-diodes, respectively bonding the bottom electrode and the connection electrode of the micro light-emitting-diodes of each of the sub-pixel regions to the first electrode contact and the second electrode contact within the sub-pixel region;

step 6 , providing a test voltage to the first electrode contact and the second electrode contact to test whether the respective micro light-emitting-diodes on the receiving substrate are normally lit or not, if all of the micro light-emitting-diodes on the receiving substrate are normally lit, continuously forming a protective layer on the micro light-emitting-diodes, the first electrode contact, and the second electrode contact; if the micro light-emitting-diodes on the receiving substrate are not normally lit, replacing the micro light-emitting-diodes which are not normally lit with new micro light-emitting-diodes, re-testing until all of the micro light-emitting-diodes on the receiving substrate are normally lit.

2. The method for manufacturing a micro light-emitting-diode display panel according to claim 1 , wherein the step 1 specifically comprises:

step 11 , providing the original substrate, forming an LED semi-conductor thin film on the original substrate, forming a patterned first photoresist layer on the LED semi-conductor thin film;

step 12 , etching the LED semi-conductor thin film with the first photoresist layer as a shielding, to form a plurality of LED semi-conductor layers with an interval arrangement;

step 13 , covering the first insulating layer on the LED semi-conductor layers and the original substrate, forming a patterned second photoresist layer on the first insulating layer;

step 14 , etching the first insulating layer with the second photoresist layer as a shielding, to form a first via and a second via, penetrating through the first insulating layer, the first via and the second via respectively reveals a portion of the LED semi-conductor layers and a portion of the original substrate;

step 15 , forming a first metal thin film on the first insulating layer, the LED semi-conductor layer, and the original substrate, forming a patterned third photoresist layer on the first metal thin film;

step 16 , etching the first metal thin film with the third photoresist layer as a shielding, to form the bottom electrode and the connection electrode, the bottom electrode contacting the LED semi-conductor layer through the first via, and the connection electrode contacting the original substrate through the second via.

3. The method for manufacturing a micro light-emitting-diode display panel according to claim 1 , wherein the transporting substrate in the step 2 is a hard substrate having an adhesive layer on its surface.

4. The method for manufacturing a micro light-emitting-diode display panel according to claim 1 , wherein the step 3 specifically comprises:

step 31 , forming the second insulating layer on the LED semi-conductor layer and the first insulating layer, forming a patterned fourth photoresist layer on the second insulating layer;

step 32 , etching the second insulating layer with the fourth photoresist layer as a shielding, to form a third via and a fourth via, penetrating through the second insulating layer, the third via and the fourth via respectively reveals a portion of the LED semi-conductor layer and a portion of the connection electrode;

step 33 , depositing and patterning a conductive thin film on the second insulating layer, to form a top electrode, the top electrode contact with the LED semi-conductor layer and the connection electrode through the third via and the fourth via, respectively.

5. The method for manufacturing a micro light-emitting-diode display panel according to claim 1 , wherein the receiving substrate provided in the step 4 further comprises: a TFT layer and a pixel definition layer;

the TFT layer is disposed between the base substrate, and the first electrode contact and the second electrode contact, the TFT layer comprises: an active layer disposed on the base substrate, a gate insulating layer covering the active layer and the base substrate, a gate electrode disposed on the gate insulating layer above the active layer, an intermediate insulating layer covering the gate electrode and the gate insulating layer, a source electrode and a drain electrode disposed on the intermediate insulating layer and contacting with two ends of the active layer, and a passivation layer covering the source electrode, the drain electrode and the intermediate insulating layer; the second electrode contact contacting the source electrode;

the pixel definition layer is disposed on the passivation layer and located around the micro light-emitting-diodes.

6. The method for manufacturing a micro light-emitting-diode display panel according to claim 1 , wherein at least two bonding positions are preset on the first electrode contact and the second electrode contact, and when the micro light-emitting-diodes which are not be normally lit, are replaced with the new micro light-emitting-diodes in the step 6 , the micro light-emitting-diodes after a replacement and the micro light-emitting-diodes before replacement are in different bonding positions.

7. The method for manufacturing a micro light-emitting-diode display panel according to claim 1 , wherein the original substrate is peeled off by a laser stripping process in step 2 .

8. A method for manufacturing a micro light-emitting-diode display panel, comprising:

step 1 , providing an original substrate, forming a plurality of micro light-emitting-diode semi-finished products disposed alternatively on the original substrate;

each of the plurality of micro light-emitting-diode semi-products comprising: an LED semi-conductor layer disposed on the original substrate, a first insulating layer covering the LED semi-conductor layer and the original substrate, a bottom electrode disposed on the first insulating layer and contacted with the LED semi-conductor layer, and a connection electrode disposed on the first insulating layer and contacting the original substrate;

step 2 , providing a transporting substrate, bonding a surface of the transporting substrate to the bottom electrode and the connection electrode of each of the micro emitting diode semi-finished products, peeling off the original substrate, to transfer all of the micro emitting diode semi-finished products to the transporting substrate and to expose a side surface of the LED semi-conductor layer contacting the original substrate;

step 3 , sequentially forming a second insulating layer and a top electrode disposed on the second insulating layer on the exposed LED semi-conductor layer and the first insulating layer, to obtain a plurality of micro light-emitting-diodes with an interval arrangement; the top electrode being contacted with the LED semi-conductor layer and the connection electrode;

step 4 , providing a transfer head and a receiving substrate, the receiving substrate comprising: a base substrate, a plurality of sub-pixel regions disposing on the base substrate in an array arrangement, and a first electrode contact and a second electrode contact alternatively disposing within each of the sub-pixel regions;

step 5 , transferring the micro light-emitting-diodes on the transporting substrate onto the receiving substrate by the transfer head, each of the sub-pixel regions corresponding to the micro light-emitting-diodes, respectively bonding the bottom electrode and the connection electrode of the micro light-emitting-diodes of each of the sub-pixel regions to the first electrode contact and the second electrode contact within the sub-pixel region;

step 6 , providing a test voltage to the first electrode contact and the second electrode contact to test whether the respective micro light-emitting-diodes on the receiving substrate are normally lit or not, if all of the micro light-emitting-diodes on the receiving substrate are normally lit, continuously forming a protective layer on the micro light-emitting-diodes, the first electrode contact, and the second electrode contact; if the micro light-emitting-diodes on the receiving substrate are not normally lit, replacing the micro light-emitting-diodes which are not normally lit with new micro light-emitting-diodes, re-testing until all of the micro light-emitting-diodes on the receiving substrate are normally lit;

wherein the step 1 specifically comprises:

step 11 , providing the original substrate, forming an LED semi-conductor thin film on the original substrate, forming a patterned first photoresist layer on the LED semi-conductor thin film;

step 12 , etching the LED semi-conductor thin film with the first photoresist layer as a shielding, to form a plurality of LED semi-conductor layers with an interval arrangement;

step 13 , covering the first insulating layer on the LED semi-conductor layers and the original substrate, forming a patterned second photoresist layer on the first insulating layer;

step 14 , etching the first insulating layer with the second photoresist layer as a shielding, to form a first via and a second via, penetrating through the first insulating layer, the first via and the second via respectively reveals a portion of the LED semiconductor layers and a portion of the original substrate;

step 15 , forming a first metal thin film on the first insulating layer, the LED semi-conductor layer, and the original substrate, forming a patterned third photoresist layer on the first metal thin film;

step 16 , etching the first metal thin film with the third photoresist layer as a shielding, to form a bottom electrode and a connection electrode, the bottom electrode contacting the LED semi-conductor layer through the first via, and the connection electrode contacting the original substrate through the second via;

wherein the transporting substrate in the step 2 is a hard substrate having an adhesive layer on its surface.

9. The method for manufacturing a micro light-emitting-diode display panel according to claim 8 , wherein the step 3 specifically comprises:

step 31 , forming the second insulating layer on the LED semi-conductor layer and the first insulating layer, forming a patterned fourth photoresist layer on the second insulating layer;

step 32 , etching the second insulating layer with the fourth photoresist layer as a shielding, to form a third via and a fourth via, penetrating through the second insulating layer, the third via and the fourth via respectively revealing a portion of the LED semi-conductor layer and a portion of the connection electrode;

step 33 , depositing and patterning a conductive thin film on the second insulating layer, to form the top electrode, the top electrode contacting the LED semi-conductor layer and the connection electrode through the third via and the fourth via, respectively.

10. The method for manufacturing a micro light-emitting-diode display panel according to claim 8 , wherein the receiving substrate provided in the step 4 further comprises: a TFT layer and a pixel definition layer;

the TFT layer is disposed between the base substrate, and the first electrode contact and the second electrode contact, the TFT layer comprises: an active layer disposed on the base substrate, a gate insulating layer covering the active layer and the base substrate, a gate electrode disposed on the gate insulating layer above the active layer, an intermediate insulating layer covering the gate electrode and the gate insulating layer, a source electrode and a drain electrode disposed on the intermediate insulating layer and contacting two ends of the active layer, and a passivation layer covering the source electrode, the drain electrode and the intermediate insulating layer; the second electrode contact contacting the source electrode;

the pixel definition layer is disposed on the passivation layer and located around the micro light-emitting-diodes.

11. The method for manufacturing a micro light-emitting-diode display panel according to claim 8 , wherein at least two bonding positions are preset on the first electrode contact and the second electrode contact, and when the micro light-emitting-diodes which are not be normally lit, are replaced with the new micro light-emitting-diodes in the step 6 , the micro light-emitting-diodes after a replacement and the micro light-emitting-diodes before replacement are in different bonding positions.

12. The method for manufacturing a micro light-emitting-diode display panel according to claim 8 , wherein the original substrate is peeled off by a laser stripping process in step 2 .