Composite semiconductor substrate
A composite semiconductor substrate being able to improve voltage withstanding and crystalline quality is provided. A composite semiconductor substrate is equipped with an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, a composite layer formed on the surface of the AlN layer, and a GaN (gallium nitride) layer formed on the surface of the composite layer. The composite layer includes an AlN (aluminum nitride) layer and a GaN layer formed on the surface of the AlN layer. In at least one composite layer, the average density of C and Fe in the GaN layer is higher than the average density of C and Fe in the AlN layer.
1. A composite semiconductor substrate comprising:
an Si substrate or an SOI (Silicon On Insulator) substrate,
an SiC layer formed on a surface of the substrate,
an Al a In b Ga 1-a-b N layer (0<a≤1, 0≤b<1, 0≤1−a−b<1, a>b, a>1−a−b) formed on a surface of the SiC layer,
a composite layer formed on a surface of the Al a In b Ga 1-a-b N layer, and
an Al c In d G a1-c-d N layer (0≤c≤0.3, 0≤d≤0.4,c<a, 1−a−b<1−c−d) formed on a surface of the composite layer, wherein
the composite layer includes an Al v In w Ga 1-v-w N layer (0≤v≤0.3, 0≤w≤0.4, v<a, 1−a−b< 1 −y v−w) and an Al x In y Ga 1-x-y N layer (v<x≤1, 0≤y<1, 0≤1−x−y<1, 1−x−y<1−v−w, c<x, 1−x−y<1−c−d, x>y, x>1−x−y) formed on a surface of the Al v In w Ga 1-v-w N layer, and
an average density of C and Fe in the Al v In w Ga 1-v-w N layer is higher than an average density of C and Fe in the Al x In y Ga 1-x-y N layer in at least one the composite layer,
wherein a thickness of the Al v In w Ga 1-v-w N layer is more than or equal to 50 nm and equal to or less than 5 μm, a thickness of the Al x In y Ga 1-x-y N layer is more than or equal to 10 nm and equal to or less than 500 nm, and a number of the composite layers is more than or equal to 1 and equal to or less than 9.
2. The composite semiconductor substrate according to claim 1 , wherein
the number of the composite layers is plural, and
the Al v In w Ga 1-v-w N layer in at least one of the plurality of the composite layers includes C.
3. The composite semiconductor substrate according to claim 2 , wherein
average densities of C and Fe in the Al v In w Ga 1-v-w N layers in the plurality of composite layers decrease from the Al v In w Ga 1-v-w N layer nearest the SIC layer toward the Al v In w Ga 1-v-w N layer farthest from the SiC layer.
4. The composite semiconductor substrate according to claim 2 , wherein
the number of the composite layers is more than or equal to 3 and equal to or less than 6.
5. The composite semiconductor substrate according to claim 2 , wherein
a compositional ratio of each of Al, In, and Ga of one Al v In w Ga 1-v-w N layer in the plurality of composite layers and a compositional ratio of each of Al, In, and Ga of another Al v In w Ga 1-v-w N layer in the plurality of composite layers are different from each other, and
a compositional ratio of each of Al, In, and Ga of one Al x In y Ga 1-x-y N layer in the plurality of composite layers and a compositional ratio of each of Al, In, and Ga of another Al x In y Ga 1-x-y N layer in the plurality of composite layers are different from each other.
6. The composite semiconductor substrate according to claim 1 , wherein
an average density of C and Fe in the Al v In w Ga 1-v-w N layer of at least one of the composite layers is more than or equal to 1*10 18 atoms/cm 3 and equal to or less than 1*10 20 atoms/cm 3 .
7. The composite semiconductor substrate according to claim 6 , wherein
the average density of C and Fe in the Al v In w Ga 1-v-w N layer of at least one of the composite layers is more than or equal to 3*10 18 atoms/cm 3 and equal to or less than 1*10 19 atoms/cm 3 .
8. The composite semiconductor substrate according to claim 1 , wherein
a density of C and Fe in an inner part of the Al v In w Ga 1-v-w N layer in at least one of the composite layers changes from a side close to the SIC layer toward a side away from the SIC layer.
9. The composite semiconductor substrate according to claim 1 , wherein
the Al v In w Ga 1-v-w N layer in at least one of the composite layers includes a first layer, a second layer formed on a surface of the first layer, and a third layer formed on a surface of the second layer, and
an average density of C and Fe in the second layer is higher than an average density of C and Fe in the first layer and an average density of C and Fe in the third layer.
10. The composite semiconductor substrate according to claim 1 , wherein
the Al v In w Ga 1-v-w N layer is an Al v Ga 1-v N layer (0≤v≤0.3, v<a,1−a−b<1−v), and
the Al x In y Ga 1-x-y N layer is an Al x Ga 1-x N layer (v<x≤1, 0<x≤1,1−x<1−v, c<x, 1−x<1−c−d, x<1−x).
11. The composite semiconductor substrate according to claim 10 , wherein
the Al v In w Ga 1-v-w N layer is a GaN layer,
the Al x In y Ga 1-x-y N layer is an AlN layer.
12. The composite semiconductor substrate according to claim 1 , further comprising:
a first and a second electrodes formed at the surface side of the Al c In d Ga 1-c-d N layer, wherein
magnitude of electrical current which flows between the first electrode and the second electrode depends on electrical voltage between the first electrode and the second electrode.