Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
Provided is a mask blank including a phase shift film on a transparent substrate. This phase shift film includes a phase shift layer at least containing a transition metal and silicon, and a silicon layer, which is configured to attenuate exposure light with which the phase shift layer is irradiated, and the silicon layer is formed to be in contact with the substrate side of the phase shift layer. This mask blank is used in manufacturing a phase shift mask to which laser exposure light having a wavelength of 200 nm or less is applied.
1. A mask blank, comprising a phase shift film on a transparent substrate,
the phase shift film having a function of transmitting exposure light of an ArF excimer laser with a transmittance of 2% or more, and a function of generating a phase difference of 150 degrees or more between the exposure light that has been transmitted through the phase shift film and the exposure light that has passed through air by a distance that is the same as a thickness of the phase shift film,
the phase shift film having a structure in which a silicon layer and a phase shift layer are laminated in the stated order from the substrate side,
the phase shift layer being formed, except for a surface layer portion thereof, of a material made of silicon and nitrogen, or a material containing, in addition to the material made of silicon and nitrogen, one or more elements selected from non-metallic elements other than oxygen, and metalloid elements,
the phase shift layer having a thickness that is larger than that of the silicon layer,
wherein the silicon layer has a thickness of 3 nm or more and less than 12 nm.
2. A mask blank according to claim 1 , wherein the silicon layer has a film density of 2.1 g/cm 3 or more and 2.5 g/cm 3 or less.
3. A mask blank according to claim 1 , wherein the phase shift layer has a film density of more than 2.5 g/cm 3 and 3.0 g/cm 3 or less.
4. A mask blank according to claim 1 , wherein the phase shift layer has a thickness that is 5 times the thickness of the silicon layer or more.
5. A mask blank according to claim 1 , wherein the phase shift layer has a thickness of 80 nm or less.
6. A mask blank according to claim 1 , wherein the phase shift layer has a nitrogen content of more than 50 atom %.
7. A mask blank according to claim 1 , further comprising a light shielding film made of a material containing chromium on a surface of the phase shift film that is opposite to the substrate.
8. A mask blank according to claim 7 , further comprising a hard mask film made of a material containing silicon on a surface of the light shielding film that is opposite to the phase shift film.
9. A method of manufacturing a phase shift mask, the method comprising a step of patterning the phase shift film of the mask blank of claim 1 .
10. A phase shift mask, comprising a phase shift film pattern on a transparent substrate,
the phase shift film pattern having a function of transmitting exposure light of an ArF excimer laser with a transmittance of 2% or more, and a function of generating a phase difference of 150 degrees or more between the exposure light that has been transmitted through the phase shift film pattern and the exposure light that has passed through air by a distance that is the same as a thickness of the phase shift film pattern,
the phase shift film pattern having a structure in which a silicon layer and a phase shift layer are laminated in the stated order from the transparent substrate side,
the phase shift layer being formed, except for a surface layer portion thereof, of a material made of silicon and nitrogen, or a material containing, in addition to the material made of silicon and nitrogen, one or more elements selected from non-metallic elements other than oxygen, and metalloid elements,
the phase shift layer having a thickness that is larger than that of the silicon layer,
wherein the silicon layer has a thickness of 3 nm or more and less than 12 nm.
11. A phase shift mask according to claim 10 , wherein the silicon layer has a film density of 2.1 g/cm 3 or more and 2.5 g/cm 3 or less.
12. A phase shift mask according to claim 10 , wherein the phase shift layer has a film density of more than 2.5 g/cm 3 and 3.0 g/cm 3 or less.
13. A phase shift mask according to claim 10 , wherein the phase shift layer has a thickness that is 5 times the thickness of the silicon layer or more.
14. A method of manufacturing a semiconductor device, the method comprising a step of transferring, using the phase shift mask manufactured by the method of manufacturing a phase shift mask of claim 9 , a transfer pattern of the phase shift mask onto a semiconductor substrate by a lithography method.
15. A phase shift mask according to claim 10 , wherein the phase shift layer has a thickness of 80 nm or less.
16. A phase shift mask according to claim 10 , wherein the phase shift layer has a nitrogen content of more than 50 atom %.
17. A phase shift mask according to claim 10 , further comprising a light shielding film pattern made of a material containing chromium on a surface of the phase shift film pattern that is opposite to the substrate.
18. A method of manufacturing a semiconductor device, the method comprising a step of transferring, using the phase shift mask of claim 10 , a transfer pattern of the phase shift mask onto a semiconductor substrate by a lithography method.