Organic light-emitting diode having charge generation layer and manufacturing method thereof and display device
An organic light-emitting diode, a manufacturing method thereof and a display device are provided. The organic light-emitting diode includes: a base substrate, a first electrode and a second electrode disposed on the base substrate, a first light-emitting layer disposed between the first electrode and the second electrode, and a charge generation layer disposed between the first light-emitting layer and the second electrode, and the charge generation layer includes a first connection layer, a carrier injection layer and a second connection layer which are stacked in sequence; the first connection layer includes an electron transport material doped with a hole blocking material, and the second connection layer includes a hole transport material doped with an electron blocking material.
1. An organic light-emitting diode, comprising:
a base substrate;
a first electrode and a second electrode disposed on the base substrate;
a first light-emitting layer disposed between the first electrode and the second electrode;
a hole transport layer disposed between the first electrode and the first light-emitting layer; and
a charge generation layer disposed between the first light-emitting layer and the second electrode,
wherein the charge generation layer comprises a first connection layer, a carrier injection layer, and a second connection layer which are stacked in sequence,
the first connection layer comprises an electron transport material doped with a hole blocking material, and the second connection layer comprises a hole transport material doped with an electron blocking material,
a surface of the first light-emitting layer closer to the base substrate and a surface of the charge generation layer closer to the base substrate are in a same plane, and the surface of the charge generation layer closer to the base substrate is in direct contact with the hole transport layer; and
the carrier injection layer consists of anthracene derivatives, aromatic diamine compounds, triphenylamine compounds, aromatic triamine compounds, or biphenyl diamine derivatives,
wherein the anthracene derivatives, the aromatic diamine compounds, the triphenylamine compounds, the aromatic triamine compounds, and the biphenyl diamine derivatives are doped with Al, Ca, M, Ag, Au, Na, K, Cs, or Li.
2. The organic light-emitting diode according to claim 1 , wherein the hole transport material comprises any one or any combination of aromatic diamine compounds, triphenylamine compounds, aromatic triamine compounds, biphenyl diamine derivatives, triarylamine polymers, and carbazole polymers.
3. The organic light-emitting diode according to claim 1 , wherein the electron transport material comprises any one or any combination of 4,7-diphenyl-1,10-ophenanthroline, 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline, 2,9-dimethyl-4,7-biphenyl-1,10-ophenanthroline, and 8-hydroxyquinoline aluminum.
4. The organic light-emitting diode according to claim 1 , wherein an electrical conductivity of the electron transport material is less than 10 −6 S/cm, and an electrical conductivity of the hole transport material is greater than 10 3 S/cm.
5. The organic light-emitting diode according to claim 1 , wherein the electron blocking material comprises any one or any combination of MoO 3 , Cs 2 CO 3 , CsF, Al, and Ir(ppz 3 ).
6. The organic light-emitting diode according to claim 1 , wherein the hole blocking material comprises any one or any combination of 2-(4-biphenyl)-5-phenyl-1,3,4-oxadiazole, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl) benzene, triphenyl quinoline, and 2,6-bis (biphenyl)-4,8-diphenyl anthracene azoline.
7. The organic light-emitting diode according to claim 1 , wherein a thickness of the carrier injection layer is from 0.5 nm to 2 nm.
8. The organic light-emitting diode according to claim 1 , further comprising a second light-emitting layer disposed between the second electrode and the charge generation layer.
9. The organic light-emitting diode according to claim 8 , wherein the first light-emitting layer comprises a first light-emitting unit and a second light-emitting unit;
the second light-emitting layer comprises a third light-emitting unit;
the first light-emitting unit comprises a red light emitting material; the second light-emitting unit comprises a green light emitting material; and the third light-emitting unit comprises a blue light emitting material.
10. The organic light-emitting diode according to claim 8 , further comprising:
an electron transport layer disposed between the second electrode and the second light-emitting layer.
11. The organic light-emitting diode according to claim 10 , wherein a thickness of the hole transport layer is from 10 nm to 180 nm; and a thickness of the electron transport layer is from 10 nm to 35 nm.
12. The organic light-emitting diode according to claim 10 , further comprising:
a hole injection layer disposed between the first electrode and the hole transport layer; and
an electron injection layer disposed between the second electrode and the electron transport layer.
13. The organic light-emitting diode according to claim 12 , wherein a thickness of the hole injection layer is from 10 nm to 180 nm; and a thickness of the electron injection layer is from 1 nm to 5 nm.
14. The organic light-emitting diode according to claim 12 , wherein a material of the hole injection layer comprises any one or any combination of poly(3,4-ethylenedioxythiophene)-polystyrolsulfon acid (PEDOT/PSS), polythiophene, and polyaniline.
15. The organic light-emitting diode according to claim 12 , wherein a material of the electron injection layer comprises any one or any combination of LiF and 8-hydroxyquinoline-lithium.
16. A display device, comprising the organic light-emitting diode according to claim 1 .
17. A method for manufacturing an organic light-emitting diode, comprising:
providing a base substrate; and
forming a first electrode, a hole transport layer, a first light-emitting layer, a charge generation layer, and a second electrode on the base substrate,
wherein the charge generation layer comprises a first connection layer, a carrier injection layer, and a second connection layer which are stacked in sequence,
the first connection layer comprises an electron transport material doped with a hole blocking material, and the second connection layer comprises a hole transport material doped with an electron blocking material,
a surface of the first light-emitting layer closer to the base substrate and a surface of the charge generation layer closer to the base substrate are in a same plane, and the surface of the charge generation layer closer to the base substrate is in direct contact with the hole transport layer, and
the carrier injection layer consists of anthracene derivatives, aromatic diamine compounds, triphenylamine compounds, aromatic triamine compounds, or biphenyl diamine derivatives,
wherein the anthracene derivatives, the aromatic diamine compounds, the triphenylamine compounds, the aromatic triamine compounds, and the biphenyl diamine derivatives are doped with Al, Ca, Mg, Ag, Au, Na, K, Cs, or Li.
18. The method according to claim 17 , comprising: forming the first light-emitting layer on the first electrode by a solution process.