Organic light-emitting diode including charge generation layer having metal interlayer with specified work function and display apparatus including the same
A display apparatus including a pixel electrode disposed on a substrate, an opposite electrode disposed to face the pixel electrode, a first emission layer and a second emission layer disposed on the first emission layer and overlapping each other between the pixel electrode and the opposite electrode, and a charge generation layer disposed between the first emission layer and the second emission layer, in which the charge generation layer includes an n-type charge generation layer, a p-type charge generation layer, and a metal interlayer disposed between the n-type charge generation layer and the p-type charge generation layer, and the metal interlayer includes metal having a work function of about −6.0 eV to about −3.5 eV.
1 . A display apparatus comprising:
a substrate;
a pixel electrode above the substrate;
an opposite electrode facing the pixel electrode;
a first emission layer;
a second emission layer above the first emission layer, and overlapping the first emission layer between the pixel electrode and the opposite electrode; and
a charge generation layer between the first emission layer and the second emission layer, and comprising an n-type charge generation layer, a p-type charge generation layer having a portion directly contacting a portion of the n-type charge generation layer, and a metal interlayer comprising bismuth (Bi) between the n-type charge generation layer and the p-type charge generation layer and having a work function of about −6.0 eV to about −3.5 Ev.
2 . The display apparatus of claim 1 , wherein a thickness of the metal interlayer is in a range of about 1 Å to about 100 Å.
3 . The display apparatus of claim 1 , wherein a thickness of the metal interlayer is less than a thickness of the n-type charge generation layer and a thickness of the p-type charge generation layer.
4 . The display apparatus of claim 1 , wherein the metal interlayer includes a single layer.
5 . The display apparatus of claim 1 , wherein the metal interlayer includes metal particles dispersed on the n-type charge generation layer.
6 . The display apparatus of claim 1 , wherein the metal interlayer further includes at least one of magnesium (Mg) or zinc (Zn).
7 . The display apparatus of claim 1 , wherein the n-type charge generation layer includes an organic semiconductor material and a metal dopant.
8 . The display apparatus of claim 7 , wherein the metal dopant includes metal having a work function of less than about-3 eV.
9 . The display apparatus of claim 8 , wherein the metal dopant includes a lanthanum-based metal or an alkali-based metal.
10 . The display apparatus of claim 8 , wherein the metal dopant includes lithium (Li), ytterbium (Yb), dysprosium (Dy), europium (Eu), or samarium (Sm).
11 . The display apparatus of claim 7 , wherein a volume ratio of the organic semiconductor material to the metal dopant is about 99:1 to about 90:10.
12 . The display apparatus of claim 1 , wherein:
the p-type charge generation layer includes a first organic semiconductor material, and a second organic semiconductor material that is different from the first organic semiconductor material; and
a volume ratio of the first organic semiconductor material to the second organic semiconductor material is about 99:1 to about 80:20.
13 . The display apparatus of claim 1 , further comprising:
a color conversion layer above the opposite electrode and corresponding to the pixel electrode; and
a color filter above the color conversion layer.
14 . The display apparatus of claim 13 , wherein the color conversion layer includes quantum dots.
15 . The display apparatus of claim 2 , wherein the thickness of the metal interlayer is in a range of about 10 Å to about 30 Å.
16 . An organic light-emitting diode comprising:
a pixel electrode above a substrate;
an opposite electrode facing the pixel electrode;
‘m’ emitting units between the pixel electrode and the opposite electrode, ‘m’ being an integer greater than or equal to 2; and
‘m−1’ charge generation layers between two adjacent emitting units among the ‘m’ emitting units, and including an n-type charge generation layer and a p-type charge generation layer having a portion directly contacting a portion of the n-type charge generation layer,
wherein at least one of the ‘m−1’ charge generation layers includes a metal interlayer comprising bismuth (Bi) between the n-type charge generation layer and the p-type charge generation layer and having a work function of about-6.0 eV to about-3.5 eV.
17 . The organic light-emitting diode of claim 16 , wherein a thickness of the metal interlayer is in a range of about 1 Å to about 100 Å.
18 . The organic light-emitting diode of claim 16 , wherein the metal interlayer includes metal particles dispersed on the n-type charge generation layer.
19 . The organic light-emitting diode of claim 18 , wherein the n-type charge generation layer and the p-type charge generation layer are in contact with each other in at least some areas with the metal interlayer between the at least some areas.
20 . The organic light-emitting diode of claim 16 , wherein the n-type charge generation layer includes an organic semiconductor material and a metal dopant including metal having a work function of less than about-3 eV.
21 . The organic light-emitting diode of claim 20 , wherein the metal dopant includes a lanthanum-based metal.
22 . The organic light-emitting diode of claim 20 , wherein the metal dopant includes lithium (Li), ytterbium (Yb), dysprosium (Dy), europium (Eu), or samarium (Sm).