Semiconductor constructions comprising dielectric material
View Patent ↗Some embodiments include a semiconductor construction which has one or more openings extending into a substrate. The openings are at least partially filled with dielectric material comprising silicon, oxygen and carbon. The carbon is present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent. Some embodiments include a method of providing dielectric fill across a semiconductor construction having an opening extending therein. The semiconductor construction has an upper surface proximate the opening. The method includes forming photopatternable dielectric material within the opening and across the upper surface, and exposing the photopatternable dielectric material to patterned actinic radiation. Subsequently, the photopatternable dielectric material is developed to pattern the photopatternable dielectric material into a first dielectric structure which at least partially fills the opening, and to remove the photopatternable dielectric material from over the upper surface.
1. A semiconductor construction comprising one or more openings extending into a substrate; the openings being at least partially filled with dielectric material comprising silicon, oxygen and carbon; with the carbon being present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent; wherein:
the dielectric material is a first dielectric material having a first composition;
at least one of the openings is only partially filled with the first dielectric material;
a second dielectric material is over the first dielectric material within said at least one of the openings, with the second dielectric material comprising a second composition which is different from the first composition;
a planarized surface extends across the second dielectric material and extends across regions of the substrate directly against lateral edges of the second dielectric material; and
said at least one of the openings is across a staircase region proximate a memory array.
2. The semiconductor construction of claim 1 wherein the first dielectric material further includes nitrogen.
3. The semiconductor construction of claim 1 wherein the first dielectric material further includes hydrogen.
4. The semiconductor construction of claim 1 wherein the second composition includes one or both of silicon dioxide and silicon nitride.
5. A semiconductor construction comprising one or more openings extending into a substrate; the openings being at least partially filled with dielectric material comprising silicon, oxygen and carbon; with the carbon being present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent; wherein:
the dielectric material is a first dielectric material having a first composition;
at least one of the openings is only partially filled with the first dielectric material;
a second dielectric material is over the first dielectric material within said at least one of the openings, with the second dielectric material comprising a second composition which is different from the first composition;
a planarized surface extends across the second dielectric material and extends across regions of the substrate directly against lateral edges of the second dielectric material; and
said at least one of the openings is across stair-step type structures.
6. A semiconductor construction comprising one or more openings extending into a substrate; the openings being at least partially filled with dielectric material comprising silicon, oxygen and carbon; with the carbon being present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent; wherein:
the dielectric material is a first dielectric material having a first composition;
at least one of the openings is only partially filled with the first dielectric material;
a second dielectric material is over the first dielectric material within said at least one of the openings, with the second dielectric material comprising a second composition which is different from the first composition;
a planarized surface extends across the second dielectric material and extends across regions of the substrate directly against lateral edges of the second dielectric material; and
said at least one of the openings is comprised by an alignment marking.
7. A semiconductor construction comprising one or more openings extending into a substrate; the openings being at least partially filled with dielectric material comprising silicon, oxygen and carbon; with the carbon being present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent; wherein:
the dielectric material is a first dielectric material having a first composition;
at least one of the openings is only partially filled with the first dielectric material;
a second dielectric material is over the first dielectric material within said at least one of the openings, with the second dielectric material comprising a second composition which is different from the first composition;
a third dielectric material is under the first dielectric material within said at least one of the openings with the third dielectric material comprising a third composition which is different from the first composition;
a planarized surface extends across the first, second and third dielectric materials, and extends across regions of the substrate directly against lateral edges of the third dielectric material; and,
said at least one of the openings is across a staircase region proximate a memory array.
8. The semiconductor construction of claim 7 wherein the second and third compositions are the same as one another.
9. The semiconductor construction of claim 7 wherein the second and third compositions are different from one another.
10. The semiconductor construction of claim 7 wherein the third composition includes one or more of hafnium oxide, zirconium oxide, aluminum oxide, tantalum oxide, silicon dioxide and silicon nitride.
11. The semiconductor construction of claim 7 wherein the third dielectric material has a thickness of at least about one monolayer, and less than or equal to about 50 Å.