Integrated circuit devices and method of manufacturing the same
An integrated circuit device includes a substrate including a fin active region extending in a first direction, a gate line intersecting the fin active region and extending in a second direction perpendicular to the first direction, a power line electrically connected to source/drain regions at sides of the gate line on the fin active region, a pair of dummy gate lines intersecting the fin active region and extending in the second direction, and a device separation structure electrically connected to the pair of dummy gate lines and including a lower dummy contact plug between the pair of dummy gate lines on the fin active region and electrically connected to the power line, and an upper dummy contact plug on the lower dummy contact plug and on the pair of dummy gate lines to electrically connect the lower dummy contact plug to the pair of dummy gate lines.
1. An integrated circuit device, comprising:
a substrate including a fin active region that extends in a first direction;
a gate line intersecting the fin active region, the gate line extending in a second direction crossing the first direction and parallel to an upper surface of the substrate;
a power line electrically connected to a source/drain region formed at a side of the gate line and on the fin active region;
a pair of dummy gate lines intersecting the fin active region, the pair of dummy gate lines being spaced apart from the gate line and extending in the second direction; and
a device separation structure electrically connected to the pair of dummy gate lines, the device separation structure including:
a lower dummy contact plug formed between the pair of dummy gate lines and on the fin active region and electrically connected to the power line; and
an upper dummy contact plug formed on the lower dummy contact plug and on the pair of dummy gate lines, the upper dummy contact plug electrically connecting the lower dummy contact plug to the pair of dummy gate lines.
2. The integrated circuit device as claimed in claim 1 , wherein:
the fin active region is a p-type metal-oxide-semiconductor (PMOS) transistor region and a drain voltage Vdd is applied to the device separation structure so that a pair of dummy transistors including the pair of dummy gate lines are turned off, or
the fin active region is an n-type metal-oxide-semiconductor (NMOS) transistor region and a source voltage Vss is applied to the device separation structure so that a pair of dummy transistors including the pair of dummy gate lines are turned off.
3. The integrated circuit device as claimed in claim 1 , wherein an upper surface of the fin active region continuously extends from a lower portion of the pair of dummy gate lines to a lower portion of the gate line.
4. The integrated circuit device as claimed in claim 1 , wherein the lower dummy contact plug vertically overlaps the upper dummy contact plug, and the lower dummy contact plug vertically overlaps a portion of the power line.
5. The integrated circuit device as claimed in claim 1 , further comprising:
an active contact plug on the source/drain region; and
a gate contact plug on the gate line,
wherein the active contact plug and the lower dummy contact plug include the same material, and the gate contact plug and the upper dummy contact plug include the same material.
6. The integrated circuit device as claimed in claim 1 , wherein:
the substrate includes a first fin active region that is a PMOS transistor region and a second fin active region that is an NMOS transistor region and is spaced apart from the first fin active region,
the gate line extends in the second direction and intersects with both of the first fin active region and the second fin active region, and
the pair of dummy gate lines includes:
a pair of first dummy gate lines extending in the second direction and intersecting the first fin active region; and
a pair of second dummy gate lines spaced apart from the pair of first dummy gate lines, the pair of second dummy gate lines extending in the second direction and intersecting the second fin active region.
7. The integrated circuit device as claimed in claim 6 , wherein:
the substrate further includes a dummy region disposed between the first fin active region and the second fin active region,
a dummy gate separation region between the pair of first dummy gate lines and the pair of second dummy gate lines is arranged on the dummy region, and
the device separation structure is configured to apply a drain voltage Vdd to the pair of first dummy gate lines and to apply a source voltage Vss to the pair of second dummy gate lines.
8. The integrated circuit device as claimed in claim 6 , wherein each of the pair of first dummy gate lines and each of the pair of second dummy gate lines is placed on a straight line.