IP Library Granted Patent US 10,185,652
Granted Patent B2
US 10,185,652 · App. 15/606,956 · Granted Jan 22, 2019

Stack access control for memory device

Inventors: Seiji Narui (Sagamihara, JP); Homare Sato (Sagamihara, JP); Chikara Kondo (Hachioji, JP)
Assignee: Micron Technology, Inc.
G06F12/02H01L23/5226G06F2212/1016G06F2212/1028
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Quick Facts
Patent No.
US 10,185,652
App. No.
15/606,956
Granted
Jan 22, 2019
Kind
B2
Abstract

An example apparatus includes a first semiconductor chip and a second semiconductor chip; and a first via and a plurality of second vias coupling the first semiconductor chip and the second semiconductor chip. The first semiconductor chip provides a first timing signal to the first via and further provides first data responsive to the first timing signal to the plurality of second vias. The second semiconductor chip receives the first timing signal from the first via and the first data from the plurality of second vias and further provides the first data responsive to the first timing signal, when the first semiconductor chip is designated, and provides a second timing signal and further provides second data responsive to the second timing signal, when the second semiconductor chip is designated.

Claims (70)

1. An apparatus comprising:

a first semiconductor chip;

a second semiconductor chip;

a first via and a plurality of second vias coupling the first semiconductor chip and the second semiconductor chip;

a first stack group including the first semiconductor chip; and

a second stack group including the second semiconductor chip,

wherein the first semiconductor chip is configured to provide a first timing signal to the first via and further configured to provide first data to the plurality of second vias responsive to the first timing signal, and

wherein the second semiconductor chip is configured to provide the first data responsive to the first timing signal when the first semiconductor chip is designated,

wherein the second semiconductor chip is further configured to provide a second timing signal and further configured to provide second data responsive to the second timing signal when the second semiconductor chip is designated,

wherein the second semiconductor chip comprises:

a command circuit configured to receive a command signal and further configured to provide a command stack identifier associated with the command signal; and

a signal transmission circuit configured to receive the first timing signal from the first via and the first data from the plurality of second vias and further configured to provide the first data responsive to the first timing signal, when the command stack identifier is indicative of the first stack group and to provide the second data responsive to the second timing signal, when the command stack identifier is indicative of the second stack group, and

wherein the signal transmission circuit comprises:

a timing signal selector circuit configured to receive the first timing signal and the second timing signal, and further configured to provide the first timing signal when the command stack identifier is indicative of the first stack group and to provide the second timing signal, when the command stack identifier is indicative of the second stack group; and

a data signal selector circuit configured to receive the first data and the second data, and further configured to provide the first data when the command stack identifier is indicative of the first stack group and to provide the second data, when the command stack identifier is indicative of the second stack group.

2. The apparatus of claim 1 , wherein the signal transmission circuit further comprises:

a stack identifier circuit configured to provide a chip stack identifier indicative of the second stack group; and

a match circuit configured to receive the command stack identifier and the chip stack identifier and further configured to provide a match signal responsive to whether the command stack identifier is indicative of the chip stack identifier.

3. The apparatus of claim 1 , wherein the signal transmission circuit further comprises a signal data moderator circuit configured to provide the first data responsive to the first timing signal and the command stack identifier indicative of the first stack group.

4. The apparatus of claim 3 , wherein the first semiconductor chip is configured to provide the first data at a double data rate, and

wherein the signal data moderator circuit is configured to latch the first data responsive to a first half period and a second half period of the first timing signal.

5. A semiconductor device comprising:

a memory array in a stack group associated with a first stack identifier;

a command circuit configured to receive a command signal, to decode a command and an address on the command signal and further configured to provide a command stack identifier associated with the address;

a set of external terminals configured to receive a first combination of signals including external data signals and an external timing signal; and

a signal transmission circuit configured to receive the first combination of signals from the set of external terminals and further configured to receive a second combination of signals including internal data signals from the memory array and an internal timing signal,

wherein the signal transmission circuit is configured to provide the first combination of signals if the command stack identifier is different from the first stack identifier and further configured to provide the second combination of signals if the command stack identifier is the first stack identifier.

6. The semiconductor device of claim 5 ,

wherein the signal transmission circuit comprises:

a timing signal selector circuit configured to receive the external timing signal and the internal timing signal and further configured to provide either the external timing signal or the internal timing signal as an output timing signal, responsive to the command stack identifier; and

a data signal selector circuit configured to receive the external data signals and the internal data signals and further configured to provide either the external data signals or the internal data signals responsive, at least in part, to the command stack identifier,

wherein the data signal selector circuit is further configured to provide either the external data signals or the internal data signals as output data signals responsive, at least in part, to the external timing signal or the internal timing signal, respectively.

7. The semiconductor device of claim 5 , wherein the signal transmission circuit further comprises:

a stack identifier circuit configured to provide the first stack identifier; and

a match circuit configured to receive the command stack identifier and the first stack identifier and further configured to provide a match signal responsive to whether the command stack identifier is indicative of the first stack identifier.

8. The semiconductor device of claim 7 , wherein the signal transmission circuit further comprises:

a timing enable circuit configured to receive the external timing signal and the match signal and configured to provide the external timing signal responsive to the match signal; and

a signal data moderator circuit configured to receive the external data signals from a portion of the set of external terminals and to receive the external timing signal from the timing enable circuit, and further configured to provide the external data signals responsive to the external timing signal when the command stack identifier indicative of another stack group different from the stack group.

9. The semiconductor device of claim 8 , wherein the signal data moderator circuit comprises at least one flip-flop circuit configured to receive the external timing signal and at least one external data signal of the external data signals and further configured to provide the at least one external data signal responsive to the external timing signal.

10. The semiconductor device of claim 8 , wherein the set of external terminals is configured to provide the first data at a double data rate, and

wherein the signal data moderator circuit is configured to latch the first data responsive to a first half period and a second half period of the first timing signal.

11. The semiconductor device of claim 10 , wherein the signal data moderator circuit comprises at least one pair of flip-flop circuits configured to receive the external timing signal and at least one external data signal of the external data signals, and

wherein one flip-flop circuit of the at least one pair of flip-flop circuits is configured to latch the first data responsive to a first half period and the other flip-flop circuit of the at least one pair of flip-flop circuits is configured to latch the first data responsive to a second half period of the first timing signal.

12. The semiconductor device of claim 10 , wherein the signal transmission circuit further comprises a data moderator configured to provide the output data signals responsive to the positive half period and the negative half period of the output timing signal.

13. A method of transmitting data from a first semiconductor chip in a first stack group associated with a first stack identifier, the method comprising:

receiving a command signal;

decoding a command on the command signal;

providing a command stack identifier associated with the command;

receiving a first combination of signals including external data signals and an external timing signal from a second semiconductor chip;

receiving a second combination of signals including internal data signals from a memory array in the first semiconductor chip and an internal timing signal;

providing the first combination of signals if the command stack identifier is different from the first stack identifier; and

providing the second combination of signals if the command stack identifier is the first stack identifier.

14. The method of claim 13 , further comprising:

receiving the external timing signal and the internal timing signal; and

providing either the external timing signal or the internal timing signal responsive to the command stack identifier.

15. The method of claim 13 , further comprising:

receiving the command stack identifier and the first stack identifier; and

providing a match signal responsive to whether the command stack identifier is indicative of the first stack identifier.

16. The method of claim 15 , further comprising:

receiving the external timing signal and the match signal;

providing the external timing signal responsive to the match signal;

receiving the external data signals and the external timing signal; and

providing the external data signals responsive to the external timing signal when the command stack identifier indicative of another stack group different from the stack group.

17. The method of claim 16 , further comprising:

latching the external data signals responsive to a first half period and a second half period of the external timing signal,

wherein the external data signals are received at a double data rate.

18. The method of claim 17 , wherein the first semiconductor chip comprises at least one pair of flip-flop circuits configured to receive the external timing signal and at least one external data signal of the external data signals, and

wherein latching the external data signals comprises:

latching the external data signals responsive to the first half period of the external timing signal by one flip-flop circuit of the at least one pair of flip-flop circuits; and

latching the external data signals responsive to the second half period of the external timing signal by the other flip-flop circuit of the at least one pair of flip-flop circuits.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050700/0535 →
RELEASE OF SECURITY INTEREST Recorded Jul 20, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 046597/0393 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 5 TO PATENT SECURITY AGREEMENT Recorded Aug 8, 2017
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 043482/0776 →
SUPPLEMENT NO. 5 TO PATENT SECURITY AGREEMENT Recorded Aug 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION
Reel/Frame 043483/0686 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 26, 2017
From: NARUI, SEIJI; SATO, HOMARE; KONDO, CHIKARA
To: MICRON TECHNOLOGY, INC.
Reel/Frame 042518/0779 →
Continuity (1)
Related Publication 20180341575A1 · Nov 29, 2018
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