Hybrid printed circuit assembly with low density main core and embedded high density circuit regions
A high density region for a low density circuit. At least a first liquid dielectric layer is deposited on the first surface of a first circuitry layer. The dielectric layer is imaged to create plurality of first recesses. Surfaces of the first recesses are plated electro-lessly with a conductive material to form first conductive structures electrically coupled to, and extending generally perpendicular to, the first circuitry layer. A plating resist is applied. A conductive material is electro-plated to the first conductive structure to substantially fill the first recesses, and the plating resist is removed.
1. A method of merging a high-density circuit with a low-density circuit comprising the steps of:
depositing a first liquid crystal polymer (LCP) layer on the low-density circuit;
forming a plurality of first recesses in the first LCP layer;
depositing conductive plating electro-lessly on selected surfaces of the first recesses to form a plurality of first conductive structures electrically coupled to, and extending generally perpendicular to, the low-density circuit;
applying a plating resist to the first LCP layer;
substantially filling the first recesses with a conductive material using electro-deposit plating to form a plurality of first conductive pillars;
removing the plating resist;
locating a first high-density circuit on the first LCP layer and electrically coupling the first high-density circuit with a plurality of the first conductive pillars;
depositing a second LCP layer on the first high-density circuit layer;
forming a plurality of second recesses in the second LCP layer;
depositing conductive plating electro-lessly on selected surfaces of the second recesses to form a plurality of second conductive structures electrically coupled to, and extending generally perpendicular to, the first high-density circuit layer;
applying a plating resist to the first high-density circuit layer;
substantially filling the second recesses with a conductive material using electro-deposit plating to form a plurality of second conductive pillars;
removing the plating resist;
locating a second high-density circuit on the second LCP layer and electrically coupling the second high-density circuit with a plurality of the second conductive pillars;
depositing a third LCP layer on the second high-density circuit to include a plurality of third recesses generally aligned with a plurality of contact pads on the second high-density circuit;
plating a conductive material on surfaces of a plurality of the third recesses comprising a plurality of third conductive structure electrically coupled to the contact pads on the second high-density circuit; and
electrically coupling contacts on an IC device to a plurality of the third conductive structures, wherein the step of electrically coupling comprises one of a flip chip attachment directly to a plurality of third conductive structures, solder balls, or wire bonding.
2. The method of claim 1 comprising the step of forming a covering layer extending across the second high-density circuit layer, the covering layer comprising a plurality of openings exposing contact pads on the second high-density circuit, layer configured to electrically couple with an IC device.
3. The method of claim 1 comprising planarizing the first LCP layer and the first conductive pillars before depositing the second LCP layer.
4. The method of claim 1 comprising the steps of: plating a conductive material on surfaces of a plurality of the third recesses comprising a plurality of third conductive structure electrically coupled to the contact pads on the second high-density circuit; and substantially filling the third recesses with a conductive material using electro-deposit plating to form a plurality of third conductive pillars electrically coupled with the contact pads on the second high-density circuit.
5. The method of claim 1 comprising the steps of: etching away portions of the second high-density circuit located in the third recesses to expose a plurality of the second conductive pillars; and substantially filling the third recesses with a conductive material using electro-deposit plating to form a plurality of third conductive pillars electrically coupled to the second conductive pillars.
6. The method of claim 1 wherein the first and second LCP layers are one of a film or a liquid.
7. A method of merging a high-density circuit with a low-density circuit comprising the steps of:
depositing a first liquid crystal polymer (LCP) layer on the low-density circuit;
forming a plurality of first recesses in the first LCP layer;
depositing conductive plating electro-lessly on selected surfaces of the first recesses to form a plurality of first conductive structures electrically coupled to, and extending generally perpendicular to, the low-density circuit;
applying a plating, resist to the first LCP layer;
substantially filling the first recesses with a conductive material using electro-deposit plating to form a plurality of first conductive pillars;
removing the plating resist;
depositing at least a second LCP layer on the first LCP layer to include a plurality of second recesses generally aligned with a plurality of the first conductive pillars;
depositing a conductive material electro-lessly on the selected surfaces of the second recesses to form a plurality of second conductive structures electrically coupled to, and extending generally perpendicular to, the first conductive pillars;
depositing a third LCP layer on the second LCP layer to include a plurality of third recesses generally aligned with a plurality of the second conductive pillars;
depositing a conductive material electro-lessly on the selected surfaces of the third recesses to form a plurality of third conductive structures electrically coupled to, and extending generally perpendicular to, the second conductive pillars; and
electrically coupling contacts on an IC device to a plurality of the third conductive structures, wherein the step of electrically coupling comprises one of a flip chip attachment directly to a plurality of third conductive structures, solder balls, or wire bonding.
8. The method of claim 7 comprising planarizing the first LCP layer and the first conductive pillars before depositing the second LCP layer.
9. The method of claim 7 comprising, the step of forming a covering layer extending across the second LCP layer, the covering layer comprising a plurality of openings exposing the second conductive structures configured to electrically couple with the contacts on an IC device.
10. The method of claim 7 comprising printing at least one electrical device on the second LCP layer and electrically coupling the electrical device to a plurality of the second conductive structures.
11. The method of claim 7 wherein the first and second LCP layers are one of a film or a liquid.