IP Library Granted Patent US 10,345,246
Granted Patent B2
US 10,345,246 · App. 15/611,290 · Granted Jul 9, 2019

Dark field wafer nano-defect inspection system with a singular beam

Inventors: Xinkang Tian (Fremont, CA); Ching-Ling Meng (Sunnyvale, CA); Yan Sun (Fremont, CA)
Assignee: Tokyo Electron Limited
G01N21/8806G01N21/49G01N21/9501G01N2021/4735G01N2021/8822G01N2201/06113
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Quick Facts
Patent No.
US 10,345,246
App. No.
15/611,290
Filed
Jun 1, 2017
Granted
Jul 9, 2019
Kind
B2
Art Unit
2886
USPC
356/237.5
Abstract

Provided is a method, system, and apparatus for inspecting a substrate. The method comprises illuminating the substrate with a singular laser beam, the singular laser beam forming an illuminated spot on the substrate and a bright fringe at a surface of the substrate, the bright fringe extending over at least a portion of the illuminated spot, and detecting, by an optical detection system, scattered light from nano-defects present on the substrate within the illuminated spot.

Claims (42)

1. A method for inspecting a substrate, comprising:

illuminating the substrate with a laser beam having a spatial phase singularity forming an illuminated spot on the substrate and a standing wave, the standing wave having at least one bright fringe and at least one dark fringe on the substrate, the at least one bright fringe extending over at least a portion of the illuminated spot; and

detecting, by a dark field optical detection system, scattered light from nano-defects present on the substrate within the illuminated spot.

2. The method of claim 1 , wherein the laser beam has at least two beam portions separated by a phase difference.

3. The method of claim 2 , wherein the phase difference is π radians.

4. The method of claim 2 , wherein the phase difference of the laser beam is formed using a phase mask or a phase retarder.

5. The method of claim 1 , wherein the laser beam has an s polarization orientation at the substrate or a p polarization orientation at the substrate.

6. The method of claim 1 , wherein an angle of incidence of the singular laser beam at the substrate is from about 1° to about 90°.

7. The method of claim 1 , wherein the laser beam includes a light wavelength in the extreme ultraviolet (EUV), deep ultraviolet (DUV), ultraviolet (UV), or visible portions of the light spectrum, or a combination of two or more thereof.

8. The method of claim 1 , wherein the dark field optical detection system is configured to detect scattered light from the nano-defects in a direction substantially perpendicular to the substrate.

9. The method of claim 1 , wherein the dark field optical detection system comprises:

an objective lens;

a configurable imaging aperture;

relay optics;

a bandpass filter; and

a detector array.

10. The method of claim 9 , wherein the detector array comprises a photomultiplier tube (PMT) array or a time delay integration charge-coupled device (TDI CCD) array.

11. The method of claim 9 , wherein the objective lens is optimized to minimize chromatic aberrations.

12. The method of claim 9 , wherein the dark field optical detection system further comprises:

an autofocus system for maintaining focus during detection of scattered light from nano-defects on the substrate.

13. The method of claim 9 , wherein the dark field optical detection system further comprises:

an image computer for signal processing an acquired optical signal from scattered light from illuminated nano-defects and for determining if a nano-defect occurs within the field of view of the dark field optical detection system.

14. The method of claim 1 , wherein the nano-defects include defects located atop the substrate and all layers formed on the substrate.

15. A system for inspection a substrate, comprising:

a substrate stage for receiving the substrate;

a laser light source;

illumination optics for directing light from the laser light source on the substrate, wherein the illumination optics are configured to form a laser beam having a spatial phase singularity for forming an illuminated spot on the substrate and a standing wave having at least one bright fringe and at least one dark fringe on the substrate; and

a dark field optical detection system for detecting illuminated nano-defects by detecting scattered light from the illuminated nano-defects on the substrate.

16. The system of claim 15 , further comprising:

a purge chamber, wherein the substrate stage is deposited in the purge chamber.

17. The system of claim 15 , wherein the dark field optical detection system comprises:

an objective lens;

a configurable imaging aperture;

relay optics;

a bandpass filter and

a detector array.

18. The system of claim 17 , wherein the detector array includes a photomultiplier tube (PMT) array or a time delay integration charge-coupled device (TDI CCD) array.

19. The system of claim 17 , wherein the dark field optical detection system further comprises:

an autofocus system for maintaining focus during detection of scattered light from nano-defects on the substrate.

20. An apparatus for inspecting a substrate, comprising:

an illumination system for forming a laser beam having a spatial phase singularity from a laser light source and directing the laser beam to the substrate, the laser beam forming an illuminated spot and a standing wave having at least one bright fringe and at least one dark fringe on the substrate; and

a dark field optical detection system for detecting illuminated nano-defects by detecting scattered light from the illuminated nano-defects on the substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 25, 2019
From: TIAN, XINKANG; MENG, CHING-LING; SUN, YAN
To: TOKYO ELECTRON LIMITED
Reel/Frame 048430/0552 →
Continuity (2)
Provisional Application 62344575 · Jun 2, 2016
Related Publication 20170350826A1 · Dec 7, 2017
Cited By (14)
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