Sensor chip package assembly and electronic device having sensor chip package assembly
A sensor chip package assembly and an electronic device having the sensor chip package assembly are disclosed, where the sensor chip package assembly includes: a metal substrate ( 100 ) which has a bonding pad region ( 11 ) and a placement region ( 12 ), the bonding pad region having a plurality of metal bonding pads ( 13 ); a sensor chip ( 200 ) which is located on an upper surface of the metal substrate, and the sensor chip having a plurality of sensor chip bonding pads ( 21 ); an electrical connection assembly ( 300 ) which electrically connects a metal bonding pad and a sensor chip bonding pad; and a packaging material cover ( 400 ) which covers the metal substrate, the sensor chip and the electrical connection assembly, where any two adjacent metal bonding pads are spaced in an insulated manner by the packaging material cover.
1. A sensor chip package assembly, comprising:
a metal substrate having a bonding pad region and a placement region, wherein the bonding pad region having a plurality of metal bonding pads;
a sensor chip being located on an upper surface of the metal substrate, wherein the sensor chip having a plurality of sensor chip bonding pads;
an electrical connection assembly electrically connecting a metal bonding pad and a sensor chip bonding pad;
a packaging material cover covering the metal substrate, the sensor chip and the electrical connection assembly, wherein a lower surface of the metal substrate is not covered by the packaging material cover, and any two adjacent metal bonding pads are spaced in an insulated manner by the packaging material cover; and
an insulated cover on the packaging material cover, wherein the insulated cover comprises a metal particle, wherein a volume proportion of the metal particle in the insulated cover is less than 8%.
2. The sensor chip package assembly according to claim 1 , wherein the electrical connection assembly is a bonding wire or a metal bump.
3. The sensor chip package assembly according to claim 1 , wherein shapes of the plurality of metal bonding pads are different.
4. The sensor chip package assembly according to claim 1 , wherein the metal bonding pad adopts a half-etching or a hollowing design.
5. The sensor chip package assembly according to claim 1 , wherein the metal substrate is provided with a chip holding portion, the chip holding portion of the metal substrate adopting a recessed design or a coplanar design.
6. The sensor chip package assembly according to claim 1 , wherein the metal substrate is provided with a chip support portion, the chip support portion of the metal substrate being placed at four corners of the metal substrate or being placed among the plurality of metal bonding pads.
7. The sensor chip package assembly according to claim 1 , wherein the metal substrate is a copper substrate, a substrate with tin or silver plated on a copper base material.
8. The sensor chip package assembly according to claim 1 , wherein the metal substrate adopts half-etching or half-cutting after packaging among dies to realize circuit insulation among different dies.
9. The sensor chip package assembly according to claim 1 , wherein the metal substrate is provided with a pin, the pin of the metal substrate is a no-lead bonding pad or terminal, or a protruding pin of a J type, a P type or an N type.
10. The sensor chip package assembly according to claim 1 , wherein a dielectric constant of the packaging material cover is greater than 3.
11. The sensor chip package assembly according to claim 1 , wherein the metal particle is of a wrapped type or a non-wrapped type.
12. The sensor chip package assembly according to claim 1 , wherein a diameter of a material filling particle of the packaging material cover is less than or equal to 40 um.
13. The sensor chip package assembly according to claim 1 , wherein a distance between the sensor chip and the metal bonding pad is greater than 20 micrometers.
14. The sensor chip package assembly according to claim 1 , wherein a surface of the sensor chip comprises a passivation layer.
15. The sensor chip package assembly according to claim 14 , wherein a thickness of the passivation layer is more than 10 nanometers.
16. The sensor chip package assembly according to claim 1 , wherein the sensor chip is interconnected with another chip through a wire in a through-silicon via, an edge chamfer or a backside bevel edge chamfer.
17. An electronic device, comprising a sensor chip package assembly, wherein the sensor chip package assembly comprises:
a metal substrate having a bonding pad region and a placement region, wherein the bonding pad region having a plurality of metal bonding pads;
a sensor chip being located on an upper surface of the metal substrate, wherein the sensor chip having a plurality of sensor chip bonding pads;
an electrical connection assembly electrically connecting a metal bonding pad and a sensor chip bonding pad;
a packaging material cover covering the metal substrate, the sensor chip and the electrical connection assembly, wherein a lower surface of the metal substrate is not covered by the packaging material cover, and any two adjacent metal bonding pads are spaced in an insulated manner by the packaging material cover; and
an insulated cover on the packaging material cover, wherein the insulated cover comprises a metal particle, wherein a volume proportion of the metal particle in the insulated cover is less than 8%.
18. A method for producing a sensor chip package, comprising:
coating an adhesive in a placement region of a metal substrate to form an adhesive layer in the placement region of the metal substrate;
placing a sensor chip on the adhesive layer to make the sensor chip fixed on an upper surface of the placement region of the metal substrate;
electrically connecting a sensor chip bonding pad with a metal bonding pad;
placing an obtained assembly in a mold, an upper portion of the mold being higher than an upper surface of the sensor chip, and filling a liquid packaging material into the mold;
solidifying an obtained chip assembly filled with the packaging material;
etching the metal substrate along an edge of a bonding pad region to make the bonding pad region disconnected from the placement region; and
covering an insulated cover on the packaging material, wherein the insulated cover comprises a metal particle, wherein a volume proportion of the metal particle in the insulated cover is less than 8%.