IP Library Granted Patent US 10,809,616
Granted Patent B2
US 10,809,616 · App. 15/614,376 · Granted Oct 20, 2020

Cholate photoacid generators and photoresists comprising same

Inventors: Emad Aqad (Marlborough, MA); Mingqi Li (Marlborough, MA); Joseph Mattia (Marlborough, MA); Cheng-Bai Xu (Southboro, MA)
Assignee: Rohm and Haas Electronic Materials LLC
G03F7/0045C07C381/12C07J31/006G03F7/0046G03F7/0382
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Quick Facts
Patent No.
US 10,809,616
App. No.
15/614,376
Granted
Oct 20, 2020
Kind
B2
Abstract

New photoacid generator compounds (“PAGs”) are provided that comprise a cholate moiety and photoresist compositions that comprise such PAG compounds.

Claims (30)

1. A photoacid generator compound of the following formula (III):

(R)—X—(C═O)O(CH 2 ) m (CWY) n SO 3 M +   (III)

wherein R is a steroid structure,

X is a linker;

W and Y are each independently in each occurrence hydrogen or fluoro;

M + represent an organic onium group;

m is an integer of 1 to 10;

n is 2.

2. A photoacid generator compound of the following formula (IV):

(R)—X—O(C═O)(CH 2 ) m (CWY) n SO 3 M +   (IV)

wherein R is a steroid structure,

X is a linker;

W and Y are each independently in each occurrence hydrogen or fluoro;

M + represent an organic onium group;

m is an integer of 1 to 10;

n is a positive integer.

3. A photoacid generator compound selected from:

wherein in each structure, m is an integer from 1 to 10, n is 2, M + represents an organic onium group, and the definition of the group R, is defined directly below the respective structure.

4. A photoresist composition comprising a resin component and a photoacid generator compound of claim 1 .

5. A photoresist composition comprising a resin component and a photoacid generator compound of claim 2 .

6. A photoresist composition comprising a resin component and a photoacid generator compound of claim 3 .

7. A method for forming a photoresist relief image comprising:

(a) applying a coating layer of a photoresist composition of claim 4 on a substrate;

(b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

8. A method for forming a photoresist relief image comprising:

(a) applying a coating layer of a photoresist composition of claim 5 on a substrate;

(b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

9. A method for forming a photoresist relief image comprising:

(a) applying a coating layer of a photoresist composition of claim 6 on a substrate;

(b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

Assignments (3)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF NAME Recorded Oct 29, 2024
From: ROHM & HAAS ELECTRONIC MATERIALS LLC
To: DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC
Reel/Frame 069272/0383 →