Light emitting diode chip scale packaging structure
View Patent ↗A light emitting diode chip scale packaging structure is disclosed. The light emitting diode chip scale packaging structure comprises a light emitting diode chip and a lens. The lens covers the light emitting diode chip. A curve of an outer surface of the lens in a cross-section view substantially complies with a polynomial of: z=Σ i=0 n a i *y i , A center point of the curve corresponding to the light emitting diode chip is a zero point of y-z coordinate axes. z is a variable of vertical axis of the curve. y is a variable of horizontal axis of the curve. a i is a constant coefficient in a term of i th degree. 3<n≤6.
1. A light emitting diode chip scale packaging structure, comprising:
a light emitting unit comprising a light emitting diode chip; and
a lens covering the light emitting diode chip, wherein a curve of an outer surface of the lens in a cross-section view substantially complies with a polynomial of:
z=− 0.0005 y 6 −0.0059 y 5 +0.0871 y 4 −0.3718 y 3 +0.5658 y 2 −0.0709 y+ 2.5046,
z is a variable of vertical axis of the curve, y is a variable of horizontal axis of the curve, a center point of the curve corresponding to the light emitting diode chip is a coordinate where y is 0 and z is 2.5046, wherein a correlation coefficient calculated from fitting the curve to the polynomial is larger than or equal to 0.995, the outer surface has a concave structure, the center point of the curve is the lowest point of the concave structure, the lens is in contact with the light emitting unit, and no air gap is between the lens and the light emitting unit.
2. The light emitting diode chip scale packaging structure according to claim 1 , further comprising a substrate, wherein the light emitting diode chip is on the substrate, wherein the substrate comprises an insulating layer and a conductive pillar passing through the insulating layer, the conductive pillar has a diameter of 0.25 mm.
3. The light emitting diode chip scale packaging structure according to claim 1 , wherein the lens further comprises a diffusing particle doped therein.
4. The light emitting diode chip scale packaging structure according to claim 1 , further comprising a first wavelength converting layer on the light emitting diode chip.
5. A direct type back light module, comprising:
a circuit board; and
a plurality of light emitting diode chip scale packaging structures, each comprising:
a light emitting unit comprising a light emitting diode chip; and
a lens covering the light emitting diode chip, wherein a curve of an outer surface of the lens in a cross-section view substantially complies with a polynomial of:
z=− 0.0005 y 6 −0.0059 y 5 +0.0871 y 4 −0.3718 y 3 +0.5658 y 2 −0.0709 y+ 2.5046,
z is a variable of vertical axis of the curve, y is a variable of horizontal axis of the curve, a center point of the curve corresponding to the light emitting diode chip is a coordinate where y is 0 and z is 2.5046, wherein a correlation coefficient calculated from fitting the curve to the polynomial is larger than or equal to 0.995, the outer surface has a concave structure, the center point of the curve is the lowest point of the concave structure, the lens is in contact with the light emitting unit, and no air gap is between the lens and the light emitting unit, wherein the plurality of the light emitting diode chip scale packaging structures is disposed apart on the circuit board and is electrically connected to the circuit board.
6. A manufacturing method for a light emitting device, comprising:
forming a light emitting diode packaging structure by a forming method comprising forming a lens to cover a light emitting unit comprising a light emitting diode chip, wherein a curve of an outer surface of the lens in a cross-section view substantially complies with a polynomial of:
z=− 0.0005 y 6 −0.0059 y 5 +0.0871 y 4 −0.3718 y 3 +0.5658 y 2 −0.0709 y+ 2.5046,
z is a variable of vertical axis of the curve, y is a variable of horizontal axis of the curve, a center point of the curve corresponding to the light emitting diode chip is a coordinate where y is 0 and z is 2.5046, wherein a correlation coefficient calculated from fitting the curve to the polynomial is larger than or equal to 0.995, the outer surface has a concave structure, the center point of the curve is the lowest point of the concave structure, the lens is in contact with the light emitting unit, and no air gap is between the lens and the light emitting unit.
7. The manufacturing method for the light emitting device according to claim 6 , further comprising disposing the light emitting diode packaging structure on a circuit board.
8. The manufacturing method for the light emitting device according to claim 7 , wherein the lens and the light emitting diode chip are disposed on the circuit board at the same time.
9. The manufacturing method for the light emitting device according to claim 6 , comprising forming a plurality of the light emitting diode packaging structures, wherein the forming method for the plurality of the light emitting diode packaging structures comprises:
disposing a plurality of the light emitting diode chips on a carrier; and
forming a packaging encapsulant to cover the plurality of the light emitting diode chips, wherein the packaging encapsulant comprises a plurality of the lens corresponding to the plurality of the light emitting diode chips.
10. The manufacturing method for the light emitting device according to claim 9 , wherein the forming method for the plurality of the light emitting diode packaging structures further comprises cutting the packaging encapsulant between the plurality of the light emitting diode chips.
11. The manufacturing method for the light emitting device according to claim 9 , wherein the forming method for the plurality of the light emitting diode packaging structures further comprises cutting the carrier between the plurality of the light emitting diode chips.