Semiconductive structure and manufacturing method thereof

1. A semiconductive structure, comprising:

a first substrate comprising:

an interconnection layer; and

a first conductor protruding from the interconnection layer;

a second substrate comprising a second conductor bonded to the first conductor;

a first cavity between and sealed by the first substrate and the second substrate, wherein the first cavity has a first cavity pressure; and

a second cavity between and sealed by the first substrate and the second substrate, wherein the second cavity has a second cavity pressure,

wherein the first cavity partially extends through the interconnection layer, and a first surface of the interconnection layer is a sidewall of the first cavity;

the first cavity pressure is less than the second cavity pressure;

a bottommost surface of the second cavity is substantially co-planar with a second surface of the interconnection layer substantially orthogonal to the first surface; and

the second cavity is defined by the second surface of the interconnection layer and a surface of the second substrate, a surface of the first conductor and a surface of the second conductor.

2. The semiconductive structure of claim 1 , further comprising an outgassing layer in the second cavity, wherein the outgassing layer is on the bottommost surface of the second cavity.

3. The semiconductive structure of claim 2 , wherein the outgassing layer comprises an oxide.

4. The semiconductive structure of claim 2 , wherein the outgassing layer comprises argon.

5. The semiconductive structure of claim 1 , wherein the second cavity pressure is about 1 atm.

6. The semiconductive structure of claim 1 , wherein a first device is positioned at the first cavity and a second device is positioned at the second cavity.

7. The semiconductive structure of claim 6 , wherein the first device is a gyroscope and the second device is an accelerometer.

8. A semiconductive structure, comprising:

a first substrate having an interconnection layer and a plurality of first conductors protruding from the interconnection layer;

a second substrate in contact with the first substrate via a portion of the plurality of first conductors;

a plurality of cavities between and sealed by the first substrate and the second substrate;

wherein the plurality of cavities comprises at least two different pressures;

wherein one of the plurality of cavities has a higher pressure with a first bottommost surface substantially co-planar with a surface of the interconnection layer, and another one of the plurality of cavities has a lower pressure with a second bottommost surface substantially lower than the surface of the interconnection layer, the one of the plurality of cavities is defined by the surface of the interconnection layer, a surface of the second substrate and a surface of the plurality of first conductors, and the another one of the plurality of cavities partially extends through the interconnection layer.

9. The semiconductive structure of claim 8 , wherein one of the plurality of the first conductors provides a sidewall for one of the plurality of cavities.

10. The semiconductive structure of claim 8 , wherein the second substrate is eutectically bonded to the first substrate.

11. The semiconductive structure of claim 8 , wherein the second bottommost surface is substantially lower than the first bottommost surface.

12. The semiconductive structure of claim 8 , further comprising an outgassing layer on the surface of the interconnection layer.

13. The semiconductive structure of claim 12 , wherein the outgassing layer protrudes from the surface of the interconnection layer and extends to a first height.

14. The semiconductive structure of claim 8 , wherein one of the plurality of the first conductors is adjacent to the interconnection layer.

15. A semiconductive structure, comprising:

a bulk substrate comprising:

an active device formed in proximity to a surface of the bulk substrate; and

an interconnection layer disposed over the bulk substrate and electrically coupled to the active device;

a bonding substrate, hermetically bonded to the bulk substrate through a plurality of conductors, wherein a first cavity and a second cavity are formed between the bonding substrate and the bulk substrate;

wherein the first cavity is in a vacuum pressure and the second cavity is in a pressure higher than the vacuum pressure; and

wherein a distance from a bottommost surface of the first cavity to the surface of the bulk substrate is less than a distance from a bottommost surface of the second cavity to the surface of the bulk substrate, and the second cavity is defined by a surface of the interconnection layer, a surface of the bonding substrate, and a surface of the plurality of conductors.

16. The semiconductive structure of claim 15 , wherein the first cavity is hermetically isolated from the second cavity.

17. The semiconductive structure of claim 15 , further comprising an outgassing layer disposed in the second cavity on the surface of the interconnection layer.

18. The semiconductive structure of claim 15 , further comprising a device hermetically sealed in the first cavity.

19. The semiconductive structure of claim 15 , wherein a portion of the interconnection layer is recessed from a top surface of the interconnection layer to have a depth in the first cavity.

20. The semiconductive structure of claim 19 , wherein the recessed portion of the interconnection layer forms a sidewall of the first cavity.