Semiconductor structure
View Patent ↗A semiconductor structure includes a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer comprising Al x In y Ga 1-x-y N layers, at least one GaN based layer, and an ohmic contact layer. The light emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light emitting layer. The Al x In y Ga 1-x-y N layers stacked on the light emitting layer, where 0<x<1, 0≤y<1, and 0<x+y<1, and the GaN based layer interposed between two of the Al x In y Ga 1-x-y N layers, and the ohmic contact layer is disposed on the Al x In y Ga 1-x-y N layers.
1. A semiconductor structure comprising:
a first-type doped semiconductor layer;
a light emitting layer disposed on the first-type doped semiconductor layer;
a second-type doped semiconductor layer disposed on the light emitting layer, the second-type doped semiconductor layer comprising:
a plurality of Al x In y Ga 1-x-y N layers stacked on the light emitting layer, where 0<x<1, 0≤y<1, and 0<x+y<1;
at least one GaN based layer interposed between two of the Al x In y Ga 1-x-y N layers; and
an ohmic contact layer disposed on the Al x In y Ga 1-x-y N layers,
wherein the Al x In y Ga 1-x-y N layers comprises:
an AlInGaN based stress control layer; and
an AlGaN based carrier blocking layer, the AlInGaN based stress control layer being disposed between the light emitting layer and the AlGaN based carrier blocking layer.
2. The semiconductor structure as claimed in claim 1 , wherein the AlInGaN based stress control layer is doped with a second-type dopant at a concentration higher than 10 19 cm −3 .
3. The semiconductor structure as claimed in claim 1 , wherein the Al x In y Ga 1-x-y N layers further comprises:
a first AlInGaN based layer disposed on light emitting layer, the first AlInGaN based layer being doped with carbon (C); and
a second AlInGaN based layer disposed on the first AlInGaN based layer.
4. The semiconductor structure as claimed in claim 3 , wherein the first AlInGaN based layer is doped with carbon (C) at a concentration higher than 5×10 17 cm −3 .
5. The semiconductor structure as claimed in claim 3 , wherein the second AlInGaN based layer contains hydrogen (H) at a concentration higher than 10 18 cm −3 .
6. The semiconductor structure as claimed in claim 1 , wherein the light emitting layer comprises a first-type dopant at a concentration higher than 10 17 cm −3 .
7. The semiconductor structure as claimed in claim 1 , wherein the light emitting layer comprises a multiple quantum well (MQW) structure, the MQW structure comprises a plurality of well layers and a plurality of barrier layers stacked alternately, and a concentration of indium (In) in one of the Al x In y Ga 1-x-y N layers is smaller than a concentration of indium (In) in each of the well layers of the MQW structure.
8. The semiconductor structure as claimed in claim 1 , wherein the GaN based layer comprises a second-type dopant at a first concentration, the Al x In y Ga 1-x-y N layers comprise the second-type dopant at a second concentration, and the first concentration is higher than the second concentration.
9. The semiconductor structure as claimed in claim 1 further comprising a substrate, wherein the first-type doped semiconductor layer is disposed on the substrate and is between the light emitting layer and the substrate.
10. The semiconductor structure as claimed in claim 1 further comprising a superlattice layer disposed between the light emitting layer and the first-type doped semiconductor layer.
11. A semiconductor structure comprising:
a first-type doped semiconductor layer;
a light emitting layer disposed on the first-type doped semiconductor layer, the light emitting layer comprising silicon (Si) at a concentration higher than 10 17 cm −3 ; and
a second-type doped semiconductor layer disposed on the light emitting layer, the second-type doped semiconductor layer comprising:
a first AlInGaN based layer disposed on light emitting layer, the first AlInGaN based layer being doped with carbon (C);
a second AlInGaN based layer disposed on the first AlInGaN based layer;
at least one GaN based layer interposed between the first AlInGaN based layer and the second AlInGaN based layer; and
an ohmic contact layer disposed on the second AlInGaN based layer.
12. The semiconductor structure as claimed in claim 11 , wherein the first AlInGaN based layer is doped with carbon (C) at a concentration higher than 5×10 17 cm −3 .
13. The semiconductor structure as claimed in claim 11 , wherein the second AlInGaN based layer contains hydrogen (H) at a concentration higher than 10 18 cm −3 .
14. The semiconductor structure as claimed in claim 11 , wherein the light emitting layer comprises a multiple quantum well (MQW) structure, the MQW structure comprises a plurality of well layers and a plurality of barrier layers stacked alternately, and a concentration of indium (In) in the first AlInGaN based layer is smaller than a concentration of indium (In) in each of the well layers of the MQW structure.
15. The semiconductor structure as claimed in claim 11 , wherein the light emitting layer comprises a multiple quantum well (MQW) structure, the MQW structure comprises a plurality of well layers and a plurality of barrier layers stacked alternately, and a concentration of indium (In) in the second AlInGaN based layer is smaller than a concentration of indium (In) in each of the well layers of the MQW structure.
16. The semiconductor structure as claimed in claim 11 , wherein the GaN based layer comprises a second-type dopant at a first concentration, the first or second AlInGaN based layer comprises the second-type dopant at a second concentration, and the first concentration is higher than the second concentration.
17. The semiconductor structure as claimed in claim 11 further comprising a substrate, wherein the first-type doped semiconductor layer is disposed on the substrate and is between the light emitting layer and the substrate.
18. The semiconductor structure as claimed in claim 11 further comprising a superlattice layer disposed between the light emitting layer and the first-type doped semiconductor layer.
19. A semiconductor structure comprising:
a first-type doped semiconductor layer;
a light emitting layer disposed on the first-type doped semiconductor layer;
a second-type doped semiconductor layer disposed on the light emitting layer, the second-type doped semiconductor layer comprising:
a plurality of Al x In y Ga 1-x-y N layers stacked on the light emitting layer, where 0<x<1, 0≤y<1, and 0<x+y<1;
at least one GaN based layer interposed between two of the Al x In y Ga 1-x-y N layers; and
an ohmic contact layer disposed on the Al x In y Ga 1-x-y N layers,
wherein the Al x In y Ga 1-x-y N layers comprises:
a first AlInGaN based layer disposed on light emitting layer, the first AlInGaN based layer being doped with carbon (C); and
a second AlInGaN based layer disposed on the first AlInGaN based layer.
20. The semiconductor structure as claimed in claim 19 , wherein the Al x In y Ga 1-x-y N layers further comprises:
an AlInGaN based stress control layer; and
an AlGaN based carrier blocking layer, the AlInGaN based stress control layer being disposed between the light emitting layer and the AlGaN based carrier blocking layer, and the AlInGaN based stress control layer is doped with a second-type dopant at a concentration higher than 10 19 cm −3 .
21. The semiconductor structure as claimed in claim 19 , wherein the first AlInGaN based layer is doped with carbon (C) at a concentration higher than 5×10 17 cm −3 .
22. The semiconductor structure as claimed in claim 19 , wherein the second AlInGaN based layer contains hydrogen (H) at a concentration higher than 10 18 cm −3 .
23. The semiconductor structure as claimed in claim 19 , wherein the light emitting layer comprises a first-type dopant at a concentration higher than 10 17 cm −3 .
24. The semiconductor structure as claimed in claim 19 , wherein the light emitting layer comprises a multiple quantum well (MQW) structure, the MQW structure comprises a plurality of well layers and a plurality of barrier layers stacked alternately, and a concentration of indium (In) in one of the Al x In y Ga 1-x-y N layers is smaller than a concentration of indium (In) in each of the well layers of the MQW structure.
25. The semiconductor structure as claimed in claim 19 , wherein the GaN based layer comprises a second-type dopant at a first concentration, the Al x In y Ga 1-x-y N layers comprise the second-type dopant at a second concentration, and the first concentration is higher than the second concentration.
26. The semiconductor structure as claimed in claim 19 further comprising a substrate, wherein the first-type doped semiconductor layer is disposed between the light emitting layer and the substrate.
27. The semiconductor structure as claimed in claim 19 further comprising a superlattice layer disposed between the light emitting layer and the first-type doped semiconductor layer.
28. A semiconductor structure comprising:
a first-type doped semiconductor layer;
a light emitting layer disposed on the first-type doped semiconductor layer;
a second-type doped semiconductor layer disposed on the light emitting layer, the second-type doped semiconductor layer comprising:
a plurality of Al x In y Ga 1-x-y N layers stacked on the light emitting layer, where 0<x<1, 0≤y<1, and 0<x+y<1;
at least one GaN based layer interposed between two of the Al x In y Ga 1-x-y N layers; and
an ohmic contact layer disposed on the Al x In y Ga 1-x-y N layers,
wherein the light emitting layer comprises a multiple quantum well (MQW) structure, the MQW structure comprises a plurality of well layers and a plurality of barrier layers stacked alternately, and a concentration of indium (In) in one of the Al x In y Ga 1-x-y N layers is smaller than a concentration of indium (In) in each of the well layers of the MQW structure.
29. The semiconductor structure as claimed in claim 28 , wherein the Al x In y Ga 1-x-y N layers comprises:
an AlInGaN based stress control layer; and
an AlGaN based carrier blocking layer, the AlInGaN based stress control layer being disposed between the light emitting layer and the AlGaN based carrier blocking layer, and the AlInGaN based stress control layer is doped with a second-type dopant at a concentration higher than 10 19 cm −3 .
30. The semiconductor structure as claimed in claim 28 , wherein the Al x In y Ga 1-x-y N layers comprises:
a first AlInGaN based layer disposed on light emitting layer, the first AlInGaN based layer being doped with carbon (C); and
a second AlInGaN based layer disposed on the first AlInGaN based layer,
wherein the first AlInGaN based layer is doped with carbon (C) at a concentration higher than 5×10 17 cm −3 .
31. The semiconductor structure as claimed in claim 28 , wherein the Al x In y Ga 1-x-y N layers comprises:
a first AlInGaN based layer disposed on light emitting layer, the first AlInGaN based layer being doped with carbon (C); and
a second AlInGaN based layer disposed on the first AlInGaN based layer,
wherein the second AlInGaN based layer contains hydrogen (H) at a concentration higher than 10 18 cm −3 .
32. The semiconductor structure as claimed in claim 28 , wherein the light emitting layer comprises a first-type dopant at a concentration higher than 10 17 cm −3 .
33. The semiconductor structure as claimed in claim 28 , wherein the GaN based layer comprises a second-type dopant at a first concentration, the Al x In y Ga 1-x-y N layers comprise the second-type dopant at a second concentration, and the first concentration is higher than the second concentration.
34. The semiconductor structure as claimed in claim 28 further comprising a substrate, wherein the first-type doped semiconductor layer is disposed between the light emitting layer and the substrate.
35. The semiconductor structure as claimed in claim 28 further comprising a superlattice layer disposed between the light emitting layer and the first-type doped semiconductor layer.
36. A semiconductor structure comprising:
a first-type doped semiconductor layer;
a light emitting layer disposed on the first-type doped semiconductor layer;
a second-type doped semiconductor layer disposed on the light emitting layer, the second-type doped semiconductor layer comprising:
a plurality of Al x In y Ga 1-x-y N layers stacked on the light emitting layer, where 0<x<1, 0≤y<1, and 0<x+y<1;
at least one GaN based layer interposed between two of the Al x In y Ga 1-x-y N layers; and
an ohmic contact layer disposed on the Al x In y Ga 1-x-y N layers,
wherein the GaN based layer comprises a second-type dopant at a first concentration, the Al x In y Ga 1-x-y N layers comprise the second-type dopant at a second concentration, and the first concentration is higher than the second concentration.
37. The semiconductor structure as claimed in claim 36 , wherein the Al x In y Ga 1-x-y N layers comprises:
an AlInGaN based stress control layer; and
an AlGaN based carrier blocking layer, the AlInGaN based stress control layer being disposed between the light emitting layer and the AlGaN based carrier blocking layer, and the AlInGaN based stress control layer is doped with a second-type dopant at a concentration higher than 10 19 cm −3 .
38. The semiconductor structure as claimed in claim 36 , wherein the Al x In y Ga 1-x-y N layers comprises:
a first AlInGaN based layer disposed on light emitting layer, the first AlInGaN based layer being doped with carbon (C); and
a second AlInGaN based layer disposed on the first AlInGaN based layer,
wherein the first AlInGaN based layer is doped with carbon (C) at a concentration higher than 5×10 17 cm −3 .
39. The semiconductor structure as claimed in claim 36 , wherein the Al x In y Ga 1-x-y N layers comprises:
a first AlInGaN based layer disposed on light emitting layer, the first AlInGaN based layer being doped with carbon (C); and
a second AlInGaN based layer disposed on the first AlInGaN based layer,
wherein the second AlInGaN based layer contains hydrogen (H) at a concentration higher than 10 18 cm −3 .
40. The semiconductor structure as claimed in claim 36 , wherein the light emitting layer comprises a first-type dopant at a concentration higher than 10 17 cm −3 .
41. The semiconductor structure as claimed in claim 36 further comprising a substrate, wherein the first-type doped semiconductor layer is disposed between the light emitting layer and the substrate.
42. The semiconductor structure as claimed in claim 36 further comprising a superlattice layer disposed between the light emitting layer and the first-type doped semiconductor layer.