Semiconductor device manufacturing method, substrate processing apparatus, and recording medium

1. A method of manufacturing a semiconductor device, comprising:

forming a film on a substrate by performing a cycle n times (where n is an integer equal to or greater than 1), the cycle including alternately performing:

forming a first layer containing a borazine ring skeleton by performing a set m times (where m is an integer equal to or greater than 1), the set including:

supplying a precursor to the substrate to form a precursor layer; and

supplying a borazine compound containing the borazine ring skeleton to the precursor layer; and

forming a second layer containing the borazine ring skeleton and oxygen by supplying an oxidizing agent to the first layer.

2. The method of claim 1 , wherein the act of forming the film is performed under a condition in which a borazine ring skeleton in the borazine compound is maintained.

3. The method of claim 1 , wherein the film is a film containing boron, nitrogen, oxygen, and an element contained in the precursor, or a film containing boron, nitrogen, oxygen, carbon and the element.

4. The method of claim 1 , wherein m is 1 and n is an integer equal to or greater than 2.

5. The method of claim 1 , wherein m is an integer equal to or greater than 2 and n is 1.

6. The method of claim 1 , wherein m is an integer equal to or greater than 2 and n is an integer equal to or greater than 2.

7. The method of claim 1 , wherein the borazine compound is an organic borazine compound, and

wherein, in the act of performing the set m times, a first layer containing boron, nitrogen, oxygen, carbon and an element contained in the precursor is formed.

8. The method of claim 7 , wherein, in the act of supplying the oxidizing agent, a second layer containing boron, nitrogen, oxygen, carbon and the element is formed by oxidizing and modifying the first layer under a condition in which the carbon contained in the first layer is not desorbed, and

in the act of forming the film, a film containing boron, nitrogen, oxygen, carbon and the element is formed as the film.

9. The method of claim 7 , wherein, in the act of supplying the oxidizing agent, a second layer containing boron, nitrogen, oxygen, carbon and the element is formed by thermally oxidizing and modifying the first layer, and

in the act of forming the film, a film containing boron, nitrogen, oxygen, carbon and the element is formed as the film.

10. The method of claim 7 , wherein, in the act of supplying the oxidizing agent, a second layer containing boron, nitrogen, oxygen and the element is formed by oxidizing and modifying the first layer under a condition in which the carbon contained in the first layer is desorbed, and in the act of forming the film, a film containing boron, nitrogen, oxygen and the element is formed as the film.

11. The method of claim 7 , wherein, in the act of supplying the oxidizing agent, a second layer containing boron, nitrogen, oxygen and the element is formed by plasma-oxidizing and modifying the first layer, and in the act of forming the film, a film containing boron, nitrogen, oxygen and the element is formed as the film.

12. The method of claim 7 , wherein, in the act of supplying the oxidizing agent, a second layer containing boron, nitrogen, oxygen and the element is formed by oxidizing and modifying the first layer using ozone as the oxidizing agent, and in the act of forming the film, a film containing boron, nitrogen, oxygen and the element is formed as the film.

13. The method of claim 7 , wherein, in the act of supplying the oxidizing agent, a second layer containing boron, nitrogen, oxygen and the element is formed by oxidizing and modifying the first layer using atomic oxygen as the oxidizing agent, the atomic oxygen being generated through a reaction between an oxygen-containing gas and a hydrogen-containing gas at a pressure of less than an atmospheric pressure, and in the act of forming the film, a film containing boron, nitrogen, oxygen and the element is formed as the film.

14. A substrate processing apparatus, comprising:

a process chamber configured to accommodate a substrate;

a precursor supply system configured to supply a precursor to the substrate in the process chamber;

a borazine compound supply system configured to supply a borazine compound to the substrate in the process chamber;

an oxidizing agent supply system configured to supply an oxidizing agent to the substrate in the process chamber; and

a control part configured to control the precursor supply system, the borazine compound supply system, and the oxidizing agent supply system to perform the following in the process chamber:

forming a film on the substrate by performing a cycle n times (where n is an integer equal to or greater than 1), the cycle including alternately performing:

a first process of forming a first layer containing a borazine ring skeleton by performing a set m times (where m is an integer equal to or greater than 1), the set including:

supplying the precursor to the substrate to form a precursor layer; and

supplying the borazine compound containing the borazine ring skeleton to the precursor layer; and

a second process of forming a second layer containing the borazine ring skeleton and oxygen by supplying the oxidizing agent to the first layer.

15. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process, the process comprising:

forming a film on a substrate by performing a cycle n times (where n is an integer equal to or greater than 1), the cycle including alternately performing:

forming a first layer containing a borazine ring skeleton by performing a set m times (where m is an integer equal to or greater than 1), the set including:

supplying a precursor to the substrate to form a precursor layer; and

supplying a borazine compound containing the borazine ring skeleton to the precursor layer; and

forming a second layer containing the borazine ring skeleton and oxygen by supplying an oxidizing agent to the first layer.