Sinterable bonding material and semiconductor device using the same

1. A sinterable bonding material comprising a silver filler and an organic base compound as a sintering promoter, wherein the silver filler comprises a flake-shaped filler, and wherein the organic base compound is a nitrogen containing hetero ring compound having an amidine moiety and/or a guanidine moiety.

2. The sinterable bonding material according to claim 1 , wherein the pKa of the conjugate acid of the organic base compound is 7.0 or more.

3. The sinterable bonding material according to claim 1 , wherein the organic base compound is at least one selected from the group consisting of substituted or unsubstituted imidazoles, 1,8-diazabicyclo[5.4.0]-7-undecene, and 1,5-diazabicyclo[4.3.0]-5-nonene.

4. The sinterable bonding material according to claim 1 , wherein the silver filler having an arithmetic average roughness (Ra) of 10 nm or less.

5. The sinterable bonding material according to claim 1 , further comprising a solvent.

6. The semiconductor device manufactured by using the sinterable bonding material according to claim 1 .

7. A method for manufacturing a semiconductor device comprising the steps of:

providing two members to be bonded;

disposing the two members and a bonding material so that surfaces to be bonded of the two members face to each other with the bonding material disposed therebetween; and

heating the two members, with the bonding material disposed therebetween to a predetermined temperature,

wherein the bonding material is a sinterable bonding material comprising a silver filler and an organic base compound as a sintering promoter, wherein the silver filler comprises a flake-shaped filler, and wherein the organic base compound is a nitrogen containing hetero ring compound having an amidine moiety and/or a guanidine moiety.