Fan-out semiconductor package and method of manufacturing the fan-out semiconductor
A fan-out semiconductor package includes a first connection member having a through-hole, a semiconductor chip disposed in the through-hole, the semiconductor chip having an active surface with connection pads disposed thereon and the semiconductor chip having an inactive surface opposing the active surface, an encapsulant, and a second connection member disposed on the first connection member and the active surface of the semiconductor chip, wherein the first connection member and the second connection member include redistribution layers electrically connected to the connection pads, wherein the semiconductor chip includes a first passivation layer disposed on the active surface and the semiconductor chip includes a second passivation layer disposed on the first passivation layer, and wherein the redistribution layer of the second connection member is directly formed on one surface of the second passivation layer and extends onto one surface of the first connection member.
1. A fan-out semiconductor package comprising:
a semiconductor chip having an active surface with connection pads disposed thereon and an inactive surface opposing the active surface, and including a first passivation layer disposed on the active surface and a second passivation layer disposed on the first passivation layer;
an encapsulant covering at least a portion of a side surface of the semiconductor chip, the side surface of the semiconductor chip disposed between the active surface and the inactive surface of the semiconductor chip, and covering at least a portion of an outermost side surface of the second passivation layer of the semiconductor chip; and
a redistribution layer disposed below the second passivation layer of the semiconductor chip and the encapsulant,
wherein the redistribution layer is directly disposed on a lower surface of the second passivation layer of the semiconductor chip and extends onto a lower surface of the encapsulant, and
wherein the redistribution layer is in direct contact with the lower surface of the encapsulant, and
wherein the side surface of the semiconductor chip and the outermost side surface of the second passivation layer are coplanar with each other.
2. The fan-out semiconductor package of claim 1 , wherein the first and second passivation layers have openings penetrating therethrough, the openings exposing at least part of the connection pads, and
the redistribution layer is disposed on the exposed connection pads and walls of the openings, resulting in contact between the redistribution layer and the connection pads of the semiconductor chip.
3. The fan-out semiconductor package of claim 1 , further comprising a connection member having a through-hole, with the semiconductor chip disposed in the through-hole of the connection member, and including a wiring layer,
wherein the connection member has a recessed portion formed in one surface thereof, the recessed portion being in contact with the redistribution layer, and
the redistribution layer being disposed in the recessed portion, resulting in contact between the redistribution layer and the wiring layer of the connection member.
4. The fan-out semiconductor package of claim 1 , wherein the lower surface of the second passivation layer and the lower surface of the encapsulant are disposed on the same level.
5. The fan-out semiconductor package of claim 1 , wherein the first passivation layer includes at least one of an oxide layer and a nitride layer, and
the second passivation layer includes an organic insulating layer.
6. The fan-out semiconductor package of claim 3 , wherein the connection member includes a first insulating layer, a first wiring layer in contact with the redistribution layer and embedded in the first insulating layer, and a second wiring layer disposed on the other surface of the first insulating layer opposing one surface of the first insulating layer in which the first wiring layer is embedded.
7. The fan-out semiconductor package of claim 6 , wherein the connection member further includes a second insulating layer disposed on the first insulating layer and covering the second wiring layer and a third wiring layer disposed on the second insulating layer.
8. The fan-out semiconductor package of claim 6 , wherein a lower surface of the first wiring layer is recessed with respect to a lower surface of the first insulating layer.
9. The fan-out semiconductor package of claim 6 , wherein the first wiring layer has a thickness greater than that of the redistribution layer.
10. The fan-out semiconductor package of claim 7 , wherein the second wiring layer is disposed on a level between the active surface and the inactive surface of the semiconductor chip.
11. The fan-out semiconductor package of claim 1 , wherein the encapsulant further covers at least a portion of an outermost side surface of the first passivation layer of the semiconductor chip.
12. The fan-out semiconductor package of claim 11 , wherein the side surface of the semiconductor chip, the outermost side surface of the first passivation layer, and the outermost side surface of the second passivation layer are coplanar with each other.