Integrated vertical transistors and light emitting diodes
The present disclosure relates to semiconductor structures and, more particularly, to integrated vertical transistors and light emitting diodes and methods of manufacture. The structure includes a vertically oriented stack of material having a light emitting diode (LED) integrated with a source region and a drain region of a vertically oriented active device.
1. A structure comprising a vertically oriented stack of material comprising a light emitting diode (LED) integrated with a source region, channel region and drain region of a vertically oriented active device.
2. The structure of claim 1 , wherein the source region and the drain region are doped regions in the vertically oriented stack of material.
3. The structure of claim 2 , wherein:
the vertically oriented stack of material comprises a driver and a light emitting portion of the LED; and
the driver and the light emitting portion of the LED are undoped material composed of a same material as the source region and the drain region.
4. The structure of claim 3 , wherein the same material is GaN.
5. The structure of claim 2 , wherein:
the vertically oriented stack of material comprises a driver and light emitting portion of the LED;
the driver and the light emitting portion of the LED are undoped material; and
the light emitting portion of the LED is a different material than the driver, the source region and the drain region.
6. The structure of claim 5 , wherein the light emitting portion of the LED is GaN and the driver, source region and the drain region are composed of Si.
7. The structure of claim 5 , wherein the source region is shared amongst a plurality of stacks of the material.
8. The structure of claim 2 , further comprising:
the channel region of the active device located between the source region and the drain region;
a dielectric material located on a sidewall of the channel region; and
gate metal in direct contact with the dielectric material, the gate metal being on a side of the vertically oriented stack of material.
9. The structure of claim 8 , further comprising contacts in electrical contact with the source region, the drain region, the gate metal and the light emitting portion of the LED.
10. The structure of claim 9 , wherein the contacts are each formed at different levels of the vertically oriented stack of material.
11. The structure of claim 1 , further comprising contacts in electrical contact with the source region, the drain region, a gate metal of the vertically oriented active device and the light emitting portion of the LED, wherein
the vertically oriented stack of material comprises a driver and a light emitting portion of the LED, and
a cathode of the LED and the drain region of the vertically oriented active device are electrically connected.
12. A structure, comprising:
a first doped region of an active device;
a channel region of the active device, which is stacked on the first doped region;
a second doped region of the active device, which is stacked on the channel region;
a light emitting material of a light emitting diode, which is stacked on the second doped region;
a dielectric material on a sidewall of the channel region;
a gate material in contact with the dielectric material; and
contacts to the first doped region, the second doped region, the gate material and the light emitting material, the contacts being different lengths for each of the first doped region, the second doped region, the gate material and the light emitting material.
13. The structure of claim 12 , wherein the first doped region, the channel region, the second doped region and the light emitting material are composed of a same material.
14. The structure of claim 13 , wherein the first doped region, the channel region, the second doped region and the light emitting material are composed of GaN and the source region and the drain region of the active device are P and N doped.
15. The structure of claim 12 , wherein the first doped region, the channel region, and the second doped region are composed of a same material.
16. The structure of claim 15 , wherein the first doped region, the channel region, and the second doped region are composed of Si material.
17. The structure of claim 16 , wherein the light emitting material is composed of GaN.
18. The structure of claim 12 , wherein the first doped region is a source region shared amongst several active devices.
19. The structure of claim 12 , wherein the active device is a driver transistor.
20. The structure of claim 12 , wherein the active device is one of a high electron mobility transistor (HEMT) and Schottky diode.