Memory cells programmed via multi-mechanism charge transports

1. A memory cell, comprising:

a semiconductor material;

a tunneling material formed on the semiconductor material, the tunneling material further comprising:

a first sub-material formed on the semiconductor material, the first sub-material comprising oxygen-rich silicon oxynitride (OR-SiON);

a second sub-material formed on the first sub-material, the second sub-material comprising lanthanum oxide (La 2 O 3 ); and

a third sub-material formed on the second sub-material, the third sub-material comprising hafnium dioxide (HfO 2 );

a charge trapping material formed on the tunneling material, wherein the charge trapping material comprises gallium nitride (GaN);

a charge blocking material formed on the charge trapping material; and

a metal gate formed on the charge blocking material; and

wherein the memory cell is programmed to a target state via a multi-mechanism charge transport such that charges are simultaneously transported to the charge trapping material through a plurality of different channels.

2. The memory cell of claim 1 , wherein the multi-mechanism charge transport comprises:

transport of electrons from the semiconductor material to the charge trapping material via a direct tunneling simultaneously with transport of electrons from the semiconductor material to the charge trapping material via a Fowler-Nordheim (F-N) tunneling.

3. The memory cell of claim 1 , wherein:

the memory cell is programmed to an erased state as the target state via the multi-mechanism charge transport comprising:

transport of holes from the metal gate to the charge trapping material simultaneously with transport of holes from the semiconductor material to the charge trapping material.

4. The memory cell of claim 1 , wherein the tunneling material is a progressive band offset (PBO) tunnel barrier.

5. The memory cell of claim 1 , wherein the tunneling material is a variable oxide thickness (VARIOT) tunnel barrier.

6. The memory cell of claim 1 , further comprising an injector silicon-rich nitride (In-SRN) formed between the charge trapping material and the charge blocking material.

7. The memory cell of claim 1 , wherein:

the charge blocking material further comprises a plurality of sub-materials; and

one of the plurality of sub-materials comprises hafnium lanthanum oxynitride (HfLaON).

8. The memory cell of claim 1 , further comprising:

an interface metallic material formed between the charge blocking material and the metal gate; and

wherein the interface metallic material comprises tantalum nitride (TaN).

9. A method, comprising:

forming a semiconductor material;

forming a tunneling material on the semiconductor material, wherein forming the tunneling material on the semiconductor material further comprises:

forming a first sub-material on the semiconductor material, the first sub-material comprising oxygen-rich silicon oxynitride (OR-SiON);

forming a second sub-material on the first sub-material, the second sub-material comprising lanthanum oxide (La 2 O 3 ); and

forming a third sub-material on the second sub-material, the third sub-material comprising hafnium dioxide (HfO 2 );

forming a charge trapping material on the tunneling material, wherein the charge trapping material comprises gallium nitride (GaN);

forming a charge blocking material on the charge trapping material; and

forming a metal gate on the charge blocking material; and

wherein the memory cell is programmed to a target state via a multi-mechanism charge transport such that charges are simultaneously transported to the charge trapping material through a plurality of different channels.